Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2898
This examiner grants 0% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18791926 | METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18540222 | MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18537997 | SEMICONDUCTOR CHIP, SEMICONDUCTOR PACKAGE, AND WAFER DICING METHOD | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18821811 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., Ltd. |
| 18816492 | SEMICONDUCTOR DEVICE | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18539036 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER CONVERSION DEVICE | Non-Final OA | Mitsubishi Electric Corporation |
| 18554189 | METHOD FOR FORMING AN OHMIC CONTACT ON A WIDE-BANDGAP SEMICONDUCTOR DEVICE AND WIDE-BANDGAP SEMICONDUCTOR DEVICE | Final Rejection | Hitachi Energy Ltd |
| 18782676 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18770679 | LIGHT-EMITTING ELEMENT ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT ARRAY SUBSTRATE | Non-Final OA | AUO Corporation |
| 18541091 | METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME | Non-Final OA | Incheon national university research & business foundation |
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