Tech Center 2800 • Art Units: 2825 2827
This examiner grants 91% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19020667 | THREE DIMENSIONAL MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18952806 | TECHNIQUES FOR INITIALIZING MEMORY ERROR CORRECTION | Non-Final OA | Micron Technology, Inc. |
| 18426117 | HYBRID DYNAMIC WORD LINE START VOLTAGE | Final Rejection | Micron Technology, Inc. |
| 18981800 | MEMORY CELL WITH UNIPOLAR SELECTORS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18886279 | MEMORY DEVICE AND METHOD OF OPERATING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18981631 | MAGNETIC MEMORY AND OPERATION METHOD OF THE SAME | Non-Final OA | Industrial Technology Research Institute |
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