Prosecution Insights
Last updated: October 02, 2026

Examiner: NGUYEN, VIET Q

Tech Center 4100 • Art Units: 2187 2818 2827 4100

This examiner grants 95% of resolved cases

Analysis

Viet Q Nguyen is assigned to Art Unit 2187 within Tech Center 4100. The examiner has 1269 resolved cases. The data shows an allowance rate of 95.1 percent, which is the frequency of successful outcomes for applications in this set. The median days to allowance is 618. This duration suggests a fast path to a patent grant for applications handled by this examiner.

The interview lift is 3.5 percent. This figure indicates that while interviews are associated with a higher likelihood of allowance, the 95.1 percent allowance rate is already the baseline. Applicants may find that the 618 median days to allowance is achievable without the 3.5 percent lift provided by an interview. The 1269 resolved cases provide a strong statistical foundation for these metrics.

In Art Unit 2187, the allowance rate reflects a receptive environment. The median days to allowance is a key benchmark for planning prosecution timelines in Tech Center 4100. Given the interview lift, practitioners might focus on high-quality initial filings to maintain the existing probability of success.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

95.1%
Allow Rate
+35.1% vs TC avg
1,282
Total Applications
+3.5%
Interview Lift
618
Avg Prosecution Days
Based on 1269 resolved cases, 2023–2026

Rejection Statute Breakdown

1.8%
§101 Eligibility
34.3%
§102 Novelty
27.2%
§103 Obviousness
23.8%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
19003386 PHASE SPLIT CIRCUIT GENERATING COMPLEMENTARY CLOCK SIGNALS AND MEMORY DEVICE INCLUDING THE SAME Non-Final OA Samsung Electronics Co., Ltd.
19059871 STATIC RANDOM-ACCESS MEMORY Non-Final OA Intel Corporation
19023577 MEMORY DEVICE AND ELECTRONIC DEVICE Non-Final OA SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
19047624 MEMORY APPARATUS AND OPERATION METHOD OF MEMORY APPARATUS Non-Final OA SK hynix Inc.
19034575 VERTICAL MEMORY DEVICE Non-Final OA SK hynix Inc.
18971871 SIGNAL ROUTING BETWEEN MEMORY DIE AND LOGIC DIE Non-Final OA Micron Technology, Inc.
18745943 METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES AND MEMORY DEVICES Non-Final OA Micron Technology, Inc.
19033172 MEMORY CIRCUIT AND METHOD OF OPERATING SAME Non-Final OA TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
19032453 SENSE AMPLIFIER CIRCUIT, MEMORY CIRCUIT, AND SENSING METHOD THEREOF Non-Final OA Taiwan Semiconductor Manufacturing Company, Ltd.
18984182 Multi-Fuse Memory Cell Circuit and Method Non-Final OA Taiwan Semiconductor Manufacturing Company Limited
18980698 LOAD REDUCED MEMORY MODULE Non-Final OA Rambus Inc.
19046048 SUB-BLOCK MODE ERASE TECHNIQUES IN A MEMORY DEVICE Non-Final OA Sandisk Technologies, Inc.

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