Tech Center 4100 • Art Units: 2187 2827 4100
This examiner grants 95% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19021918 | SEMICONDUCTOR MEMORY DEVICES HAVING EFFICIENT SERIALIZERS THEREIN FOR TRANSFERRING DATA | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19059871 | STATIC RANDOM-ACCESS MEMORY | Non-Final OA | Intel Corporation |
| 18122038 | CONFIGURABLE ECC MODE IN DRAM | Non-Final OA | Intel Corporation |
| 18952823 | MEMORY CONTROLLER AND OPERATING METHOD THEREOF | Non-Final OA | SK hynix Inc. |
| 18932586 | MEMORY PERFORMING TARGET REFRESH OPERATION AND OPERATING METHOD OF MEMORY | Non-Final OA | SK hynix Inc. |
| 18977030 | ERASE DISTRIBUTION TIGHTENING TO IMPROVE READ BUDGET WINDOW IN A MEMORY SUB-SYSTEM | Non-Final OA | Micron Technology, Inc. |
| 18971871 | SIGNAL ROUTING BETWEEN MEMORY DIE AND LOGIC DIE | Non-Final OA | Micron Technology, Inc. |
| 18791225 | MEMORY DEVICE HAVING WINDOW CENTERING | Non-Final OA | Micron Technology, Inc. |
| 18745943 | METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES AND MEMORY DEVICES | Non-Final OA | Micron Technology, Inc. |
| 18649419 | GREATER THAN BINARY STATE DIGITAL LOGIC FOR SUPERCONDUCTIVE CIRCUITS | Non-Final OA | Massachusetts Institute of Technology |
| 19033172 | MEMORY CIRCUIT AND METHOD OF OPERATING SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18984182 | Multi-Fuse Memory Cell Circuit and Method | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18984708 | SEMICONDUCTOR DEVICE CAPABLE OF SIMULTANEOUSLY CHANGING POLARITY AND MAGNITUDE OF ANOMALOUS HALL EFFECT SIGNAL ACCORDING TO INPUT CURRENT, OPERATING METHOD THEREOF, AND SYSTEM | Non-Final OA | UIF (University Industry Foundation), Yonsei University |
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