Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2827
This examiner grants 94% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18972688 | AUTOMATIC SINGLE-USE-DEVICE VOLTAGE COMPATIBILITY | Non-Final OA | Boston Scientific Scimed, Inc. |
| 18960150 | SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18954739 | SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18747033 | METHOD OF STABILIZING OUTPUT VOLTAGE OF VOLTAGE REGULATOR, ELECTRONIC DEVICE AND STORAGE DEVICE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18624904 | NON-VOLATILE MEMORY | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18984515 | DUMMY DATA-BASED READ REFERENCE VOLTAGE SEARCH OF NAND MEMORY | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18884842 | HYBRID TEST READ SCHEME USING IN-NAND PARTIAL CHECKSUM | Non-Final OA | SK hynix Inc. |
| 18985285 | ATOMIC COMPARE AND SWAP IN A COHERENT CACHE SYSTEM | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 19048183 | APPARATUS WITH NON-LINEAR REFRESH MECHANISM AND METHODS FOR OPERATING THE SAME | Non-Final OA | Micron Technology, Inc. |
| 18967011 | DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT | Non-Final OA | Micron Technology, Inc. |
| 18890624 | MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES | Non-Final OA | Micron Technology, Inc. |
| 18960648 | MEMORY CIRCUITS AND METHODS FOR LATCHING READOUT IN MULTI-BANK SRAM MEMORY | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18954783 | DUO-LEVEL WORD LINE DRIVER | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18983284 | METHOD AND APPARATUS FOR DEFECT-TOLERANT MEMORY-BASED ARTIFICIAL NEURAL NETWORK | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18622866 | PREDICTION OF DATA RETENTION DEGRADATION OF A NON-VOLATILE MEMORY DEVICE BASED ON A MACHINE LEARNING ALGORITHM | Non-Final OA | Microchip Technology Incorporated |
| 18958125 | PHASE CHANGE MEMORY CELL HAVING A HEATER WITH ACTIVATED RESISTANCE IN TEMPERATURE, AND IN-MEMORY COMPUTATION CIRCUIT USING SUCH A PHASE CHANGE MEMORY CELL | Non-Final OA | STMicroelectronics International N.V. |
| 18934463 | MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM | Non-Final OA | Everspin Technologies, Inc. |
| 19050126 | MEMORY DEVICE AND OPERATION METHOD THEROF | Non-Final OA | MACRONIX International Co., Ltd. |
| 18991886 | TERNARY CONTENT ADDRESSABLE MEMORY AND DECISION GENERATION METHOD FOR THE SAME | Non-Final OA | MACRONIX INTERNATIONAL CO., LTD. |
| 19004610 | BIT CELL, IN-MEMORY COMPUTING CIRCUIT FOR MAJORITY FUNCTIONS, AND IN-MEMORY COMPUTING METHOD | Non-Final OA | GlobalFoundries U.S. Inc. |
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