Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1713 1714 1716 1743 2852
This examiner grants 51% of resolved cases
Examiner Thomas T Pham works within Tech Center 2800 and Art Unit 1713, having handled 582 resolved cases. The data shows an allowance rate of 51.4 percent, which represents the frequency of grants among resolved applications. The median days to allowance is 1180, providing a benchmark for the duration of the prosecution process for successful applications. This 1180 day median is a consideration for scheduling. The statistics indicate a balanced environment where approximately half of the resolved cases result in a patent.
The interview lift of 15.7 percent indicates the change in allowance probability when an interview is conducted. This lift shows how direct communication with the examiner correlates with prosecution outcomes. With 582 resolved cases as a baseline, the 1180 day pendency is a metric for applicants. Practitioners should evaluate the 15.7 percent lift and the 51.4 percent allowance rate when developing a strategy for Art Unit 1713. The lift offers a path for improving the odds of a grant. Engaging the examiner early may help clarify the scope of the claims and address prior art rejections.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18771727 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL METAL POLISHING AND POLISHING METHOD USING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18232123 | PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 19008224 | POLISHING COMPOSITION COMPRISING POLISHING PARTICLES HAVING HIGH WATER AFFINITY | Final Rejection | NISSAN CHEMICAL CORPORATION |
| 18766908 | POLISHING COMPOSITIONS AND METHODS OF USE THEREOF | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 18476215 | DENTAL APPLIANCES WITH ORNAMENTAL DESIGNS AND ASSOCIATED METHODS | Non-Final OA | Align Technology, Inc. |
| 18374224 | ETCHING PROCESSING METHOD AND ETCHING PROCESSING APPARATUS | Final Rejection | Hitachi High-Tech Corporation |
| 17908177 | PLASMA PROCESSING METHOD | Final Rejection | Hitachi High-Tech Corporation |
| 16650691 | POLISHING SOLUTION, POLISHING SOLUTION SET, AND POLISHING METHOD | Non-Final OA | HITACHI CHEMICAL COMPANY, LTD. |
| 18044336 | TEMPORARY CAPPING MATERIAL FOR OXIDE PREVENTION IN LOW TEMPERATURE DIRECT METAL-METAL BONDING | Non-Final OA | Lam Research Corporation |
| 18400440 | SEMICONDUCTOR DIE AND METHODS OF FORMATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18646459 | PLANARIZATION PROCESS AND METHOD | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18534061 | UNIFORM GAPFILL DEPOSITION ON SEMICONDUCTOR SUBSTRATES WITH VARYING GEOMETRIES | Final Rejection | Applied Materials, Inc. |
| 18521948 | PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL | Final Rejection | Applied Materials, Inc. |
| 17674127 | HIGHLY SELECTIVE SILICON ETCHING | Final Rejection | Applied Materials, Inc. |
| 18573700 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM AND COMPUTER-READABLE RECORDING MEDIUM | Non-Final OA | Tokyo Electron Limited |
| 18564314 | FILM FORMATION METHOD AND FILM FORMATION DEVICE | Non-Final OA | Tokyo Electron Limited |
| 18517206 | METHOD AND SYSTEM FOR PLASMA PROCESS | Final Rejection | Tokyo Electron Limited |
| 18386618 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18430567 | WET ETCH FORMULATIONS AND RELATED METHODS | Final Rejection | ENTEGRIS, INC. |
| 18187055 | ATOMIC LAYER ETCHING OF METAL OXIDES USING NOVEL CO-REACTANTS AS HALOGENATING AGENTS FOR SEMICONDUCTOR FABRICATION | Final Rejection | North Carolina State University |
| 16645741 | METHOD FOR MANUFACTURING DISK-SHAPED GLASS SUBSTRATE, METHOD FOR MANUFACTURING THIN GLASS SUBSTRATE, AND METHOD FOR MANUFACTURING LIGHT-GUIDING PLATE | Final Rejection | HOYA CORPORATION |
| 18702402 | ETCHING METHODS USING SILICON-CONTAINING HYDROFLUOROCARBONS | Non-Final OA | L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude |
| 18309925 | SYSTEMS AND METHODS FOR ENGRAVING OF NANO VOID-DASH METASURFACE INTO SUBSTRATE TO GENERATE BIREFRINGENCE IN THE SURFACE LAYER | Final Rejection | Lawrence Livermore National Security, LLC |
| 18409615 | Functionalized Metal and Nitride CMP Slurry | Non-Final OA | DuPont Electronic Materials Holding, Inc. |
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