Prosecution Insights
Prosecution Insights
Technology area: Semiconductors, Circuits & Optics
6 pending office actions • 6 art units • 6 examiners • 0 of 6 (0%) have an AI response strategy ready • 13 patents granted in the last 365 days
Infineon Technologies Canada Inc. is currently managing 6 pending office actions in the Semiconductors, Circuits & Optics technology area. These actions are spread across 6 distinct examiners and 6 distinct art units. This high degree of dispersion indicates that the company's filings cover a broad range of specific sub-technologies within the larger semiconductor field. Managing 6 distinct art units requires a sophisticated approach to prosecution, as each unit may have its own specific interpretation of patent law and examination guidelines.
The busiest examiner is NICELY, JOSEPH C, who is responsible for 1 pending office action. Because there are 6 pending office actions and 6 distinct examiners, each examiner is handling exactly 1 action. This one-to-one ratio between actions, examiners, and art units suggests a highly diversified prosecution strategy. No single examiner or art unit has a concentrated influence over the company's pending matters. This distribution ensures that the 6 pending office actions are evaluated independently, providing the company with a broad set of feedback from 6 different examiners across the patent office.
Based on the USPTO statutory response window for each pending office action. 1 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 2 (33%) |
| Multi-statute (no §101) | 4 (67%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| NICELY, JOSEPH C | 1 | 77.7% | +19.8% |
| LI, MEIYA | 1 | 69.1% | +25.8% |
| KIM, JAY C | 1 | 49.3% | +21.6% |
| ASHBAHIAN, ERIC K | 1 | 68.0% | +4.7% |
| ANGUIANO, MICHAEL | 1 | 51.9% | +19.9% |
| NEWTON, VALERIE N | 1 | 84.2% | +5.9% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 1 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 17213665 | GaN HEMT DEVICE STRUCTURE AND METHOD OF FABRICATION | NEWTON, VALERIE N | 13d |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 4 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18522920 | COMMON DRAIN BIDIRECTIONAL SWITCH | NICELY, JOSEPH C | — |
| 18493665 | SUBSTRATE BIASING FOR A TRANSISTOR STRUCTURE THAT USES A TWO-DIMENSIONAL ELECTRON GAS | LI, MEIYA | — |
| 18315398 | SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIFFERENCES | KIM, JAY C | — |
| 18129457 | GaN SEMICONDUCTOR POWER TRANSISTORS WITH STEPPED METAL FIELD PLATES AND METHODS OF FABRICATION | ASHBAHIAN, ERIC K | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 4 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18522920 | COMMON DRAIN BIDIRECTIONAL SWITCH | NICELY, JOSEPH C | — |
| 18493665 | SUBSTRATE BIASING FOR A TRANSISTOR STRUCTURE THAT USES A TWO-DIMENSIONAL ELECTRON GAS | LI, MEIYA | — |
| 18315398 | SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIFFERENCES | KIM, JAY C | — |
| 18085684 | EDGE-STRUCTURED LEADFRAME FOR EMBEDDED DIE PACKAGING OF POWER SEMICONDUCTOR DEVICES | ANGUIANO, MICHAEL | — |
| Art Unit | Apps |
|---|---|
| 2813 | 1 |
| 2811 | 1 |
| 2815 | 1 |
| 2891 | 1 |
| 2899 | 1 |
| 2897 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18522920 | COMMON DRAIN BIDIRECTIONAL SWITCH | NICELY, JOSEPH C | 2813 | §102§112 | Non-Final OA | — | Pending | Nov 29, 2023 |
| 18493665 | SUBSTRATE BIASING FOR A TRANSISTOR STRUCTURE THAT USES A TWO-DIMENSIONAL ELECTRON GAS | LI, MEIYA | 2811 | §103§112 | Non-Final OA | — | Pending | Oct 24, 2023 |
| 18315398 | SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIFFERENCES | KIM, JAY C | 2815 | §103§112 | Non-Final OA | — | Pending | May 10, 2023 |
| 18129457 | GaN SEMICONDUCTOR POWER TRANSISTORS WITH STEPPED METAL FIELD PLATES AND METHODS OF FABRICATION | ASHBAHIAN, ERIC K | 2891 | §102§103§112 | Final Rejection | — | Pending | Mar 31, 2023 |
| 18085684 | EDGE-STRUCTURED LEADFRAME FOR EMBEDDED DIE PACKAGING OF POWER SEMICONDUCTOR DEVICES | ANGUIANO, MICHAEL | 2899 | §103 | Final Rejection | — | Pending | Dec 21, 2022 |
| 17213665 | GaN HEMT DEVICE STRUCTURE AND METHOD OF FABRICATION | NEWTON, VALERIE N | 2897 | §103 | Final Rejection | 13d | Pending | Mar 26, 2021 |
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