Tech Center 2800 • Art Units: 2823 2829 2897
This examiner grants 84% of resolved cases
Valerie N. Newton is an examiner in Tech Center 2800 and Art Unit 2823. She has managed 920 resolved cases, resulting in an allowance rate of 84.1 percent. This 84.1 percent rate indicates the frequency of successful outcomes for applications in her docket. The volume of 920 cases reflects the total number of applications she has brought to a final resolution. This data provides a basis for understanding prosecution trends in her assigned area.
The interview lift is 5.9 percent, which represents the change in allowance probability associated with examiner interviews. This 5.9 percent lift is a factor for practitioners to consider when planning their strategy. The median days to allowance is 885, providing a benchmark for the time required to reach an allowance. This 885 days duration serves as a reference for the speed of her examination process. Practitioners can use the 84.1 percent allowance rate as a starting point for evaluating the likelihood of a grant. The 5.9 percent lift suggests that verbal engagement offers an increase in the probability of a grant.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18427795 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18603465 | ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18503104 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., Ltd. |
| 17225988 | DISPLAY DEVICE, AND METHOD OF MANUFACTURING A DISPLAY DEVICE | Non-Final OA | Samsung Display Co., Ltd. |
| 18239151 | DISPLAY DEVICE AND METHOD FOR REPAIRING THE SAME | Final Rejection | LG DISPLAY CO., LTD. |
| 18072400 | LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | LG Display Co., LTD. |
| 18613110 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME | Non-Final OA | NICHIA CORPORATION |
| 18359327 | NANOMAGNET FOR SPIN-BASED QUANTUM-DOT QUBIT | Final Rejection | The Boeing Company |
| 17817857 | GAP-FILL FOR 3D NAND STAIRCASE | Final Rejection | Intel NDTM US LLC |
| 16913307 | SOURCE OR DRAIN STRUCTURES WITH HIGH SURFACE GERMANIUM CONCENTRATION | Non-Final OA | Intel NDTM US LLC |
| 18392862 | SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUS | Final Rejection | SONY GROUP CORPORATION |
| 18552200 | SEMICONDUCTOR DEVICE | Final Rejection | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 17987269 | DISPLAY ELEMENT AND ELECTRONIC DEVICE | Final Rejection | Sony Semiconductor Solutions Corporation |
| 18502482 | SEMICONDUCTOR DEVICE, MATCHING CIRCUIT, AND FILTER CIRCUIT | Final Rejection | Murata Manufacturing Co., Ltd. |
| 18578135 | OPTICAL SEMICONDUCTOR MODULE AND SAMPLE OBSERVATION APPARATUS | Non-Final OA | KYOCERA Corporation |
| 18461636 | ANTENNA DIODE INTEGRATION WITH BACKSIDE BACK END OF THE LINE NETWORK | Final Rejection | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18332792 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18428095 | INTEGRATED CIRCUIT WITH CORRUGATED CHANNEL STRUCTURES HAVING CONTROLLED DOPING PROFILE OVER CHANNEL TOPOGRAPHY | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18336382 | GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18651155 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Rohm Co., Ltd. |
| 18523109 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME | Final Rejection | NANYA TECHNOLOGY CORPORATION |
| 18780438 | SEMICONDUCTOR STRUCTURE WITH HEAT DISSIPATION STRUCTURE AND METHOD OF FABRICATING THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18369497 | LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE HAVING THE SAME | Final Rejection | SEOUL VIOSYS CO., LTD. |
| 17213665 | GaN HEMT DEVICE STRUCTURE AND METHOD OF FABRICATION | Final Rejection | Infineon Technologies Canada Inc. |
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