Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2813
This examiner grants 78% of resolved cases
Joseph C Nicely is an examiner in Tech Center 2800 and Art Unit 2813. The examiner has 804 resolved cases. The data shows an allowance rate of 77.6 percent, which indicates the frequency of patent grants for applications in this unit. The median days to allowance for these cases is 875. This timeframe provides a clear expectation for the duration of the prosecution process.
The interview lift is 20.0 percent. This figure suggests that conducting an interview has a significant impact on the probability of success compared to the 77.6 percent allowance rate. Applicants may find that verbal communication is a highly effective strategy. The 804 resolved cases provide a stable basis for these observations.
In Art Unit 2813, the 875 median days to allowance reflects the typical speed of the examination cycle. The 20.0 percent interview lift represents a substantial improvement in outcomes. Practitioners should prioritize an interview when developing their strategy for Tech Center 2800.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18412778 | MAGNETIC MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18502702 | SEMICONDUCTOR PACKAGE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18302905 | DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18115617 | SEMICONDUCTOR DEVICE | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18179197 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND ELECTRONIC DEVICE | Final Rejection | HUAWEI DIGITAL POWER TECHNOLOGIES CO., LTD. |
| 18671908 | ELECTRONIC APPARATUS AND MANUFACTURING METHOD THEREOF | Non-Final OA | Innolux Corporation |
| 18088546 | GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION | Final Rejection | Intel Corporation |
| 18567162 | III-V, II-VI IN-SITU COMPLIANT SUBSTRATE FORMATION | Final Rejection | The Regents of the University of California |
| 18975715 | SiC UV PHOTODETECTOR | Non-Final OA | BAE SYSTEMS Information and Electronic Systems Integration Inc. |
| 18497409 | SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | Infineon Technologies Austria AG |
| 17502692 | FIELD PLATE ARRANGEMENT FOR TRENCH GATE FET | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18511007 | TWIN CHANNEL ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY | Non-Final OA | Micron Technology, Inc. |
| 18156120 | WIDE BAND GAP TRANSISTOR WITH NANOLAMINATED INSULATING GATE STRUCTURE AND PROCESS FOR MANUFACTURING A WIDE BAND GAP TRANSISTOR | Final Rejection | STMICROELECTRONICS S.r.l. |
| 18603046 | Semiconductor Structure with Gate Isolation Layer and Manufacturing Method Thereof | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18063787 | TRANSISTOR DEVICES INCLUDING SELF-ALIGNED OHMIC CONTACTS AND CONTACT REGIONS AND RELATED FABRICATION METHODS | Non-Final OA | Wolfspeed, Inc. |
| 18360555 | SEMICONDUCTOR DIE STACKING ARCHITECTURE AND CONNECTION METHOD THEREFORE | Final Rejection | Sandisk Technologies, Inc. |
| 18502103 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18201163 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | Final Rejection | United Semiconductor (Xiamen) Co., Ltd. |
| 18513678 | DISPLAY MODULE | Non-Final OA | South China University of Technology |
| 18228713 | FIELD-EFFECT TRANSISTORS WITH A GATE DIELECTRIC LAYER FORMED ON A SURFACE TREATED BY ATOMIC LAYER ETCHING | Final Rejection | GlobalFoundries U.S. Inc. |
| 18602879 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | ENKRIS SEMICONDUCTOR, INC. |
| 18522920 | COMMON DRAIN BIDIRECTIONAL SWITCH | Non-Final OA | Infineon Technologies Canada Inc. |
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