Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2813
This examiner grants 77% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18501980 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17900183 | POWER DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17502692 | FIELD PLATE ARRANGEMENT FOR TRENCH GATE FET | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 17903518 | SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF | Non-Final OA | Huawei Technologies Co., Ltd. |
| 18084484 | SEMICONDUCTOR DEVICE | Final Rejection | Toshiba Electronic Devices & Storage Corporation |
| 18502440 | SEMICONDUCTOR DEVICE | Non-Final OA | Murata Manufacturing Co., Ltd. |
| 18518585 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18502640 | INTERCONNECT STRUCTURE WITH LOW RC DELAY AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18153751 | MULTI-FINGER HIGH-ELECTRON MOBILITY TRANSISTOR | Non-Final OA | NEXPERIA B.V. |
| 18152845 | SEMICONDUCTOR DEVICE AND ESD PROTECTION DEVICE COMPRISING THE SAME | Non-Final OA | NEXPERIA B.V. |
| 18059129 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | RENESAS ELECTRONICS CORPORATION |
| 18697212 | BIFACIAL SOLAR CELL AND PREPARATION METHOD THEREFOR | Non-Final OA | TONGWEI SOLAR (MEISHAN) CO., LTD. |
| 18156120 | WIDE BAND GAP TRANSISTOR WITH NANOLAMINATED INSULATING GATE STRUCTURE AND PROCESS FOR MANUFACTURING A WIDE BAND GAP TRANSISTOR | Non-Final OA | STMICROELECTRONICS S.r.l. |
| 18360555 | SEMICONDUCTOR DIE STACKING ARCHITECTURE AND CONNECTION METHOD THEREFORE | Non-Final OA | Sandisk Technologies, Inc. |
| 18140253 | SEMICONDUCTOR DEVICE HAVING A TRENCH STRUCTURE WITH LOWER, UPPER, AND INTERMEDIARY SECTIONS AND METHOD OF PRODUCING THE SEMICONDUCTOR DEVICE | Final Rejection | Infineon Technologies Austria AG |
| 18228713 | FIELD-EFFECT TRANSISTORS WITH A GATE DIELECTRIC LAYER FORMED ON A SURFACE TREATED BY ATOMIC LAYER ETCHING | Non-Final OA | GlobalFoundries U.S. Inc. |
| 18502103 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18059265 | SEMICONDUCTOR DEVICE AND METHODS FOR FORMING THE SAME | Non-Final OA | Vanguard International Semiconductor Corporation |
| 18299245 | METHOD FOR MANUFACTURING TRENCH-TYPE MOSFET | Non-Final OA | Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd. |
| 18197909 | TRANSISTOR | Non-Final OA | STMicroelectronics (Rousset) SAS |
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