Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2815
This examiner grants 49% of resolved cases
Jay C Kim is an examiner in Tech Center 2800, specifically Art Unit 2815, with 872 resolved cases. The data indicates an allowance rate of 49.3 percent. This rate is associated with a median pendency of 1291 days from filing to allowance for applications assigned to this examiner.
Conducting interviews with this examiner results in an interview lift of 21.6 percent. This 21.6 percent lift is a specific measure of the change in allowance probability following an interview. Applicants can evaluate this lift against the 49.3 percent base rate when deciding whether to request a formal interview during the 1291-day median pendency period.
The 872 resolved cases provide the foundation for these metrics in Art Unit 2815. The 49.3 percent allowance rate and the 21.6 percent interview lift are the primary data points for prosecution. Practitioners can use these figures to manage timelines and expectations throughout the 1291-day median pendency in Tech Center 2800.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18613414 | PRINTED CIRCUIT BOARD AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18291922 | DISPLAY SUBSTRATE AND DISPLAY APPARATUS | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18032582 | RAY DETECTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18406229 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE | Final Rejection | Samsung Display Co., Ltd. |
| 18311038 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | Samsung Display Co., LTD. |
| 18354809 | SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE | Final Rejection | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18322861 | LIGHT-EMITTERS WITH GROUP III-NITRIDE-BASED QUANTUM WELL ACTIVE REGIONS HAVING GAN INTERLAYERS | Final Rejection | Wisconsin Alumni Research Foundation |
| 18663359 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18383526 | TRANSISTOR AND DISPLAY DEVICE | Final Rejection | Semiconductor Energy Laboratory Co., Ltd. |
| 18035150 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18628217 | SOLID-STATE IMAGING DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18200375 | LIGHT EMITTING DEVICE | Final Rejection | The Regents of the University of Michigan |
| 18648169 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | FUJITSU LIMITED |
| 18270077 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE | Final Rejection | KYOCERA Corporation |
| 18421830 | SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE, ITS MANUFACTURE AND USES | Final Rejection | Microsoft Technology Licensing, LLC |
| 16476412 | SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME | Non-Final OA | DENSO CORPORATION |
| 18218927 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18783478 | RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18647104 | HYBRID-BONDING STACK INCLUDING A PROCESSOR DIE AND MULTI-CACHE-LEVEL MEMORY DIES AND METHODS OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18366725 | RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18196187 | Ohmic Contact for Semiconductor Structures | Final Rejection | Applied Materials, Inc. |
| 18687233 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Nuvoton Technology Corporation Japan |
| 18291871 | VARIABLE CAPACITANCE ELEMENT | Final Rejection | Nuvoton Technology Corporation Japan |
| 18818538 | TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED OXYGEN VACANCY COMPLEX OXIDES | Non-Final OA | BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM |
| 17991842 | DISPLAY APPARATUS | Final Rejection | AUO Corporation |
| 18211923 | HIGH FLUX LED WITH LOW OPERATING VOLTAGE UTILIZING TWO P-N JUNCTIONS CONNECTED IN PARALLEL AND HAVING ONE TUNNEL JUNCTION | Non-Final OA | Lumileds LLC |
| 18164205 | Semiconductor Device Having Semiconductor Structure with Polarity Inverting Layer | Non-Final OA | Wolfspeed, Inc. |
| 17281898 | METHODS FOR MAKING SILICON AND NITROGEN CONTAINING FILMS | Non-Final OA | VERSUM MATERIALS US, LLC |
| 18272620 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18272621 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
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