Tech Center 2800 • Art Units: 2815
This examiner grants 48% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18032582 | RAY DETECTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE | Final Rejection | BOE TECHNOLOGY GROUP CO., LTD. |
| 17478150 | MASK AND METHOD FOR PREPARING SAME, AND METHOD FOR PREPARING DISPLAY PANEL | Final Rejection | BOE Technology Group Co., Ltd. |
| 16895692 | NITRIDE SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18421830 | SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE, ITS MANUFACTURE AND USES | Non-Final OA | Microsoft Technology Licensing, LLC |
| 18196187 | Ohmic Contact for Semiconductor Structures | Non-Final OA | Applied Materials, Inc. |
| 18383526 | TRANSISTOR AND DISPLAY DEVICE | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18035150 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE | Final Rejection | Semiconductor Energy Laboratory Co., Ltd. |
| 18270077 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE | Non-Final OA | KYOCERA Corporation |
| 18218927 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18329881 | BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18308064 | GALLIUM NITRIDE GROWTH SUBSTRATE MATERIAL | Final Rejection | Robert Bosch GmbH |
| 18354809 | SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE | Non-Final OA | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18200375 | LIGHT EMITTING DEVICE | Non-Final OA | The Regents of the University of Michigan |
| 18211923 | HIGH FLUX LED WITH LOW OPERATING VOLTAGE UTILIZING TWO P-N JUNCTIONS CONNECTED IN PARALLEL AND HAVING ONE TUNNEL JUNCTION | Final Rejection | Lumileds LLC |
| 17478475 | SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT | Final Rejection | TDK CORPORATION |
| 15778174 | SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT | Final Rejection | TDK CORPORATION |
| 18178464 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE | Final Rejection | Kioxia Corporation |
| 18039729 | NITRIDE SEMICONDUCTOR DEVICE | Non-Final OA | ROHM CO., LTD. |
| 18308976 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 18272620 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 17281898 | METHODS FOR MAKING SILICON AND NITROGEN CONTAINING FILMS | Final Rejection | VERSUM MATERIALS US, LLC |
| 18126630 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 17406218 | GAN CRYSTAL AND SUBSTRATE | Final Rejection | NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
| 18164205 | Semiconductor Device Having Semiconductor Structure with Polarity Inverting Layer | Final Rejection | Wolfspeed, Inc. |
| 18228994 | LIGHT-EMITTING ELEMENT STRUCTURE | Non-Final OA | GLOBALWAFERS CO., LTD. |
| 18212798 | METHOD FOR EPITAXY OF HIGH ELECTRON MOBILITY TRANSISTOR | Non-Final OA | GLOBALWAFERS CO., LTD. |
| 17594996 | METHOD FOR DEPOSITING A SEMICONDUCTOR LAYER SYSTEM, WHICH CONTAINS GALLIUM AND INDIUM | Final Rejection | AIXTRON SE |
| 18338975 | SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF | Non-Final OA | ENKRIS SEMICONDUCTOR, INC. |
| 18319437 | MANUFACTURING METHODS OF SEMICONDUCTOR STRUCTURES | Non-Final OA | ENKRIS SEMICONDUCTOR, INC. |
| 18137797 | HETEROEPITAXIAL SEMICONDUCTOR DEVICES WITH ENHANCED THERMAL DISSIPATION | Final Rejection | Woflspeed, Inc. |
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