Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2815
This examiner grants 49% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18612110 | MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18291922 | DISPLAY SUBSTRATE AND DISPLAY APPARATUS | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18354809 | SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE | Final Rejection | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18663359 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18383526 | TRANSISTOR AND DISPLAY DEVICE | Final Rejection | Semiconductor Energy Laboratory Co., Ltd. |
| 18200375 | LIGHT EMITTING DEVICE | Final Rejection | The Regents of the University of Michigan |
| 18421830 | SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE, ITS MANUFACTURE AND USES | Non-Final OA | Microsoft Technology Licensing, LLC |
| 16476412 | SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME | Non-Final OA | DENSO CORPORATION |
| 18270077 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE | Final Rejection | KYOCERA Corporation |
| 18272620 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18272621 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18218927 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18329881 | BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18302987 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18647104 | HYBRID-BONDING STACK INCLUDING A PROCESSOR DIE AND MULTI-CACHE-LEVEL MEMORY DIES AND METHODS OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18366725 | RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18327051 | IMPLANT SCHEME TO IMPROVE HIGH ELECTRON MOBILITY TRANSISTOR CONTACT RESISTANCE | Non-Final OA | Applied Materials, Inc. |
| 18196187 | Ohmic Contact for Semiconductor Structures | Final Rejection | Applied Materials, Inc. |
| 18308976 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 17800146 | OPTOELECTRONIC COMPONENT, AND METHOD OF VARYING THE CONTRAST BETWEEN EMITTERS | Non-Final OA | ams-OSRAM International GmbH |
| 18687233 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Nuvoton Technology Corporation Japan |
| 18291871 | VARIABLE CAPACITANCE ELEMENT | Final Rejection | Nuvoton Technology Corporation Japan |
| 18632275 | SEMICONDUCTOR DEVICE | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18221396 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18322861 | LIGHT-EMITTERS WITH GROUP III-NITRIDE-BASED QUANTUM WELL ACTIVE REGIONS HAVING GAN INTERLAYERS | Final Rejection | Wisconsin Alumni Research Foundation |
| 18352187 | SEMICONDUCTOR STRUCTURE | Final Rejection | ENKRIS SEMICONDUCTOR, INC. |
| 18323343 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | Final Rejection | ENKRIS SEMICONDUCTOR, INC. |
| 18319437 | MANUFACTURING METHODS OF SEMICONDUCTOR STRUCTURES | Non-Final OA | ENKRIS SEMICONDUCTOR, INC. |
| 17862933 | SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER | Final Rejection | SHOWA DENKO K.K. |
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