Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2815
This examiner grants 49% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18032582 | RAY DETECTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE | Final Rejection | BOE TECHNOLOGY GROUP CO., LTD. |
| 17478150 | MASK AND METHOD FOR PREPARING SAME, AND METHOD FOR PREPARING DISPLAY PANEL | Final Rejection | BOE Technology Group Co., Ltd. |
| 16476412 | SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME | Non-Final OA | DENSO CORPORATION |
| 18310071 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | HUAWEI TECHNOLOGIES CO., LTD. |
| 17936380 | SEMICONDUCTOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 16895692 | NITRIDE SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18421830 | SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE, ITS MANUFACTURE AND USES | Non-Final OA | Microsoft Technology Licensing, LLC |
| 18035150 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE | Final Rejection | Semiconductor Energy Laboratory Co., Ltd. |
| 18327051 | IMPLANT SCHEME TO IMPROVE HIGH ELECTRON MOBILITY TRANSISTOR CONTACT RESISTANCE | Final Rejection | Applied Materials, Inc. |
| 18196187 | Ohmic Contact for Semiconductor Structures | Non-Final OA | Applied Materials, Inc. |
| 18308064 | GALLIUM NITRIDE GROWTH SUBSTRATE MATERIAL | Final Rejection | Robert Bosch GmbH |
| 18354809 | SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE | Non-Final OA | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18200375 | LIGHT EMITTING DEVICE | Non-Final OA | The Regents of the University of Michigan |
| 18211923 | HIGH FLUX LED WITH LOW OPERATING VOLTAGE UTILIZING TWO P-N JUNCTIONS CONNECTED IN PARALLEL AND HAVING ONE TUNNEL JUNCTION | Final Rejection | Lumileds LLC |
| 18270077 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE | Non-Final OA | KYOCERA Corporation |
| 18178464 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE | Final Rejection | Kioxia Corporation |
| 18218927 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18329881 | BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17670863 | STRUCTURE FOR DETECTING/MONITORING PROCESS CHARGING DAMAGE DUE TO METAL AND ISOLATION WELL CHARGING | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18308976 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 18272620 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 18272621 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 17281898 | METHODS FOR MAKING SILICON AND NITROGEN CONTAINING FILMS | Final Rejection | VERSUM MATERIALS US, LLC |
| 18322861 | LIGHT-EMITTERS WITH GROUP III-NITRIDE-BASED QUANTUM WELL ACTIVE REGIONS HAVING GAN INTERLAYERS | Non-Final OA | Wisconsin Alumni Research Foundation |
| 17406218 | GAN CRYSTAL AND SUBSTRATE | Final Rejection | NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
| 18164205 | Semiconductor Device Having Semiconductor Structure with Polarity Inverting Layer | Non-Final OA | Wolfspeed, Inc. |
| 18221404 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18221396 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18228994 | LIGHT-EMITTING ELEMENT STRUCTURE | Non-Final OA | GLOBALWAFERS CO., LTD. |
| 18137797 | HETEROEPITAXIAL SEMICONDUCTOR DEVICES WITH ENHANCED THERMAL DISSIPATION | Final Rejection | Woflspeed, Inc. |
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