Tech Center 2800 • Art Units: 2827
This examiner grants 99% of resolved cases
Justin Bryce Heisterkamp is an examiner in Tech Center 2800 and Art Unit 2827, where 82 resolved cases have been processed. The allowance rate for these applications is 98.8 percent. This rate provides a baseline for the probability of allowance for cases assigned to this examiner. Understanding this 98.8 percent outcome is a factor for setting expectations during prosecution.
The interview lift is 2.2 percent. This figure indicates the change in allowance probability when an interview is conducted compared to the baseline. For practitioners, this 2.2 percent suggests that direct communication is a tool to consider in Art Unit 2827. The data indicates how the examiner responds to verbal advocacy among the 82 resolved cases. Engaging in such dialogue is a factor in navigating the prosecution requirements of this art unit.
The median days to allowance is 823. This timeline represents the typical duration from filing to an allowed outcome. When planning for prosecution, practitioners should factor in this 823-day period. These metrics offer a data-grounded perspective on the prosecution environment in Tech Center 2800. This information allows for an informed approach to managing applications under this examiner's review.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19019083 | NONVOLATILE MEMORY DEVICE REDUCING A NUMBER OF PROGRAM BIT LINES AND PROGRAM METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 19020022 | Managing Program Operations in Memory Devices | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18830337 | MEMORY DEVICE | Final Rejection | Kioxia Corporation |
| 19002526 | BACKGROUND DATA REFRESH IN STORAGE DEVICES | Non-Final OA | SK Hynix NAND Product Solutions Corp. (dba Solidigm) |
| 18625205 | SEMICONDUCTOR DEVICE | Final Rejection | SK hynix Inc. |
| 19045465 | Self-Refresh Status Indication for Self-Refresh Exit | Non-Final OA | Micron Technology, Inc. |
| 19035197 | SELECTIVE BIT LINE CLAMPING CONTROL FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM) | Non-Final OA | STMicroelectronics International N.V. |
| 19046037 | READ TECHNIQUES FOR IMPROVING PERFORMANCE IN MULTI-BIT MEMORY CELLS | Non-Final OA | Sandisk Technologies, Inc. |
| 19023284 | MEMORY DEVICE AND CONTROL METHOD THEREOF | Non-Final OA | MACRONIX International Co., Ltd. |
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