Tech Center 3600 • Art Units: 2111 2641 2645 2811 2825 3648
This examiner grants 82% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19011861 | DEVICE WITH NEURAL NETWORK | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18987658 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18932043 | HARDWARE-BASED TRAINING FOR SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY | Non-Final OA | QUALCOMM Incorporated |
| 19020524 | BOUNDARY OFFSET CONTROL FOR MEMORY BLOCK READING | Non-Final OA | Micron Technology, Inc. |
| 18901895 | SELF-ADAPTATION OF DRAM COMMAND/ADDRESS INTERFACE | Non-Final OA | Micron Technology, Inc. |
| 18742097 | HEAT GENERATION CONTROL FOR MEMORY SYSTEM EVALUATION | Final Rejection | Micron Technology, Inc. |
| 18423178 | MEMORY DEVICE FOR SIGNED MULTI-BIT TO MULTI-BIT MULTIPLICATIONS | Non-Final OA | Micron Technology, Inc. |
| 17864046 | MEMORY DEVICE TO READ MEMORY CELL PAIRS AND REDUCE ACCESS LINE VOLTAGE AFTER A MEMORY CELL SWITCHES | Non-Final OA | Micron Technology, Inc. |
| 17463379 | Programmable Control of Signal Characteristics of Pins of Integrated Circuit Memory Chips | Non-Final OA | Micron Technology, Inc. |
| 18947810 | A METHOD TO TEST LDO DRIVING/SINKING IN SOC | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18540314 | CAPACITIVE NOISE COMPENSATION FOR A READ BITLINE IN A MACHINE MEMORY | Non-Final OA | NVIDIA Corp. |
| 19021154 | PROGRAMMING DUMMY DATA OR PERFORMING FLASH WRITE ON PARTIALLY PROGRAMMED MEMORY BLOCKS OF VIRTUAL BLOCKS | Non-Final OA | Microchip Technology Incorporated |
| 18748836 | PROGRAMMING WITHOUT PRE-CHARGE IN NONVOLATILE MEMORY DEVICES | Final Rejection | SanDisk Technologies, Inc. |
| 18882268 | PULSE SIGNAL GENERATOR TO REDUCE POWER CONSUMPTION OF SRAM AND SRAM HAVING THE SAME | Non-Final OA | UIF (University Industry Foundation), Yonsei University |
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