Prosecution Insights
Prosecution Insights
Tech Center 3600 • Art Units: 2818 2894 3652
This examiner grants 82% of resolved cases
Pratiksha Jayant Lohakare has resolved 96 cases in Tech Center 3600. In Art Unit 2818, the examiner maintains an allowance rate of 82.3 percent. The median days to allowance for these cases is 1170, which is a key metric for prosecution duration. Practitioners can use this 1170-day figure to set expectations for the time required to reach a grant. The 82.3 percent rate reflects the frequency of successful outcomes for applications reaching a resolution.
The interview lift of 15.3 percent suggests that direct communication is associated with an increase in the probability of success compared to the 82.3 percent base rate. This lift indicates that interviews are a tool for resolving outstanding issues. With 96 resolved cases, the data provides the context for these strategic metrics. Practitioners should factor the 1170-day median pendency into their decision to interview. The 15.3 percent lift is a measurable factor for planning prosecution in Art Unit 2818.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18441681 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18520934 | SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18486831 | SEMICONDUCTOR PACKAGES | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18282801 | Display Substrate and Preparing Method Therefor, and Display Apparatus | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18734446 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18408399 | DISPLAY PANEL AND DEPOSITION APPARATUS | Non-Final OA | Samsung Display Co., Ltd. |
| 17831418 | DISPLAY APPARATUS HAVING A REFRACTIVE LAYER | Non-Final OA | Samsung Display Co., Ltd. |
| 18398432 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18467920 | METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT | Final Rejection | NICHIA CORPORATION |
| 18147457 | ARCHITECTURES AND METHODS FOR METAL LAMINATION ON A GLASS LAYER | Final Rejection | Intel Corporation |
| 18399400 | SEMICONDUCTOR STRUCTURE, FORMING METHOD THEREOF AND SEMICONDUCTOR DEVICE | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 18607622 | SEMICONDUCTOR MANUFACTURING APPARATUS | Final Rejection | Mitsubishi Electric Corporation |
| 18253196 | LOW RESISTANCE PULSED CVD TUNGSTEN | Non-Final OA | Lam Research Corporation |
| 18335680 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18596003 | Chip Die Substrate with Edge-Mounted Capacitors | Non-Final OA | NVIDIA Corporation |
| 17889694 | SEMICONDUCTOR ISOLATION DEVICE AND METHOD | Non-Final OA | Micron Technology, Inc. |
| 18786591 | TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF HBNC LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18662286 | SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN UNIT WITH TUNNEL LAYER AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18786529 | SEMICONDUCTOR DEVICE HAVING A MULTILAYER SOURCE/DRAIN REGION AND METHODS OF MANUFACTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18693428 | THIN-FILM TRANSISTOR DRIVING DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION |
| 18422677 | Thermally Stable FinFET Device for High Temperature Operation | Final Rejection | Wolfspeed, Inc. |
| 18355765 | BONDED THREE-DIMENSIONAL MEMORY DEVICE HAVING TEMPORARY ELECTRICAL GROUNDING PATHS IN DUMMY BLOCK AND METHODS OF MAKING THE SAME | Final Rejection | SANDISK TECHNOLOGIES LLC |
| 18679463 | METHOD OF MANUFACTURING ISOLATION STRUCTURE | Non-Final OA | MIKRO MESA TECHNOLOGY CO., LTD. |
| 18206933 | Inductors Embedded in Package Substrate and Board and Method and System for Manufacturing the Same | Final Rejection | Chipletz, Inc. |
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