Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2823 2828 2897
This examiner grants 87% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18338125 | GALLIUM NITRIDE POWER TRANSISTOR | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 18352667 | Power Semiconductor Device and Method of Producing a Power Semiconductor Device | Non-Final OA | Infineon Technologies AG |
| 18014286 | LIGHT-EMITTING DEVICE | Final Rejection | SHARP KABUSHIKI KAISHA |
| 17710584 | VERTICAL BIT DATA PATHS FOR INTEGRATED CIRCUITS | Non-Final OA | Intel Corporation |
| 17874985 | DEVICES HAVING A TRANSISTOR WITH A MODIFIED CHANNEL REGION | Non-Final OA | Micron Technology, Inc. |
| 18142600 | JUNCTION STRUCTURE ELEMENT AND METHOD OF MANUFACTURING THE SAME | Final Rejection | RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
| 18357144 | RECONFIGURABLE AMBIPOLAR TRANSISTOR | Non-Final OA | UIF (University Industry Foundation), Yonsei University |
| 18358966 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18202541 | ANTI-FERROELECTRIC MEMORY DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company LTD |
| 18314811 | SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 18069411 | ELECTRONIC COMPONENT WITH AT LEAST ONE LAYER OF A FERROELECTRIC OR ANTIFERROELECTRIC MATERIAL | Non-Final OA | Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V. |
| 18263435 | PLATING METHOD AND PLATING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18500151 | HEAT DISSIPATION STRUCTURE OF ELECTRONIC DEVICE | Non-Final OA | Delta Electronics, Inc. |
| 18057658 | SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC STRUCTURE HAVING MOIRÉ PATTERN OF TWO-DIMENSIONAL MATERIAL LAYER | Final Rejection | SK hynix Inc |
| 18378513 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY SYSTEM | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18355417 | METHOD FOR SYNTHESIZING NOBLE METAL-SEMICONDUCTOR HETEROSTRUCTURES AND PHOTOCATALYTIC SYSTEM FOR SIMULTANEOUSLY PHOTOCATALYTIC CONVERSION OF CARBON DIOXIDE AND MICROPLASTIC INTO CARBON MONOXIDE | Non-Final OA | City University of Hong Kong |
| 17733118 | BIPOLAR JUNCTION TRANSISTOR | Non-Final OA | GLOBALFOUNDRIES U.S. Inc. |
| 18281445 | SEMICONDUCTOR APPARATUS AND FORMING METHOD FOR FERROELECTRIC THIN FILM | Non-Final OA | TOKYO INSTITUTE OF TECHNOLOGY |
| 18270712 | PHOTOELECTRIC DEVICES | Final Rejection | TCL TECHNOLOGY GROUP CORPORATION |
| 18140669 | SYSTEM AND METHOD FOR TWO-DIMENSIONAL ELECTRONIC DEVICES | Non-Final OA | NOHM DEVICES, INC. |
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