Prosecution Insights
Prosecution Insights
Tech Center 3600 • Art Units: 2812 2814 2846 2893 3645
This examiner grants 100% of resolved cases
Kieran Murray Cunningham is associated with Tech Center 3600 and Art Unit 2812, with 2 resolved cases on record. The cases resulted in an allowance, yielding a 100.0% allowance rate. The median days to allowance for these instances is 991, which serves as the benchmark for pendency in his docket. This 991-day timeline provides a temporal guide for applicants in the 3600 Tech Center. Practitioners should use this figure to estimate the duration of the examination process.
The data shows an interview lift of 0.0%, suggesting that interviews did not change the outcome for the 2 resolved cases. The 100.0% rate is based on the cases resolved to date. The median to allowance is the indicator of his procedural speed in Art Unit 2812. Despite the 0.0% lift, the allowance rate indicates a successful track record for the cases resolved. Applicants should monitor these figures as additional cases are resolved in Tech Center 3600. The current metrics available define the initial profile for this examiner.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18773068 | SEMICONDUCTOR PACKAGE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18607941 | SEMICONDUCTOR PACKAGE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18414655 | SEMICONDUCTOR DEVICES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18525286 | DISPLAY APPARATUS | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18510209 | SEMICONDUCTOR DEVICE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18367619 | SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18465405 | SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18769809 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., Ltd. |
| 18589769 | SEMICONDUCTOR DEVICE | Non-Final OA | KABUSHIKI KAISHA TOSHIBA |
| 18534658 | SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT | Final Rejection | Robert Bosch GmbH |
| 18466223 | SEMICONDUCTOR ELEMENT WITH SHIELDING | Final Rejection | Robert Bosch GmbH |
| 18731422 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE | Non-Final OA | Magnolia White Corporation |
| 18560567 | SEMICONDUCTOR DEVICE | Final Rejection | Mitsubishi Electric Corporation |
| 18565918 | WIRING BOARD ASSEMBLY, LID ASSEMBLY, PACKAGE SET, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT | Final Rejection | KYOCERA Corporation |
| 18388275 | SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD OF FORMING THE SAME | Final Rejection | MEDIATEK INC. |
| 18436030 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | Non-Final OA | SK hynix Inc. |
| 18540992 | Avalanche Photodiode With Field Plates | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18417411 | HIGH-DENSITY SYSTEM-ON-CHIP PARTITIONING | Non-Final OA | Meta Platforms Technologies, LLC |
| 18403103 | SEMICONDUCTOR DEVICE WITH VERTICAL BODY CONTACT AND METHODS FOR MANUFACTURING THE SAME | Non-Final OA | Micron Technology, Inc. |
| 18772304 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18524445 | Backside Via and Dual Side Power Rail For Epitaxial Source/Drain Structure | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18523455 | OXIDATION CONFORMALITY IMPROVEMENT WITH IN-SITU INTEGRATED PROCESSING | Final Rejection | Applied Materials, Inc. |
| 18504426 | SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF | Final Rejection | NANYA TECHNOLOGY CORPORATION |
| 18589094 | STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE WITH WORD LINE CONTACT VIA STRUCTURES LOCATED OVER SUPPORT FEATURES AND METHODS OF FORMING THE SAME | Non-Final OA | SANDISK TECHNOLOGIES LLC |
| 18504143 | MEMORY DEVICE HAVING REDUCED CIRCUIT AREA | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18368025 | Etching method of semiconductor structure | Final Rejection | United Semiconductor (Xiamen) Co., Ltd. |
| 18468181 | Fabrication of Through-Silicon Vias | Final Rejection | IMEC VZW |
| 18526681 | OPTO-ELECTRICAL INSULATED FRONTSIDE ILLUMINATED 3D DIGITAL SILICON PHOTOMULTIPLIER | Non-Final OA | SOCPRA SCIENCES ET GENIE S.E.C. |
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