Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2814 2892
This examiner grants 80% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18454105 | INTEGRATED CIRCUIT DEVICES AND METHODS OF FORMING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18475563 | QUAD FLAT NO-LEAD PACKAGE WITH ENHANCED CORNER PADS FOR BOARD LEVEL RELIABILITY | Non-Final OA | Texas Instruments Incorporated |
| 17977250 | SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18522867 | METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES | Final Rejection | ASM IP Holding B.V. |
| 18549470 | IMAGING DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 17905778 | LIGHT RECEIVING ELEMENT AND DISTANCE MEASURING SYSTEM | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18477635 | SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18174007 | NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN REMOVAL | Non-Final OA | Intel Corporation |
| 18114120 | PROTECTION AGAINST ELECTROMIGRATION WITHIN A LAYER OF AN INTEGRATED CIRCUIT | Non-Final OA | Intel Corporation |
| 17955203 | BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR | Non-Final OA | Intel Corporation |
| 17940195 | BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION | Final Rejection | Intel Corporation |
| 18589569 | INTEGRATED CIRCUIT WITH DUMMY BOUNDARY CELLS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18521569 | Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device Structures | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18459448 | SEMICONDUCTOR DEVICE WITH CONDUCTIVE FEATURE CONNECTING TRANSISTORS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18446707 | PIXEL SENSOR INCLUDING A LAYER STACK TO REDUCE AND/OR BLOCK THE EFFECTS OF PLASMA PROCESSING AND ETCHING ON THE PIXEL SENSOR | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd |
| 18204081 | NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF | Non-Final OA | Tokyo Electron Limited |
| 18475566 | SYSTEMS AND METHODS FOR POWER DELIVERY FOR SEMICONDUCTOR DEVICES | Non-Final OA | Avago Technologies International Sales Pte. Limited |
| 17758011 | DISPLAY PANEL INCLUDING OXYGEN SUPPLEMENT FUNCTIONAL LAYER AND MANUFACTURING METHOD THEREOF, AND MOBILE TERMINAL | Final Rejection | GUANGZHOU CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. |
| 18170773 | MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON SILICON | Non-Final OA | MACOM Technology Solutions Holdings, Inc. |
| 18450731 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME | Non-Final OA | CHANGXIN MEMORY TECHNOLOGIES, INC. |
| 18150775 | SEMICONDUCTOR STRUCTURE WITH GERMANIUM-SILICON/POLYSILICON HYBRID GATE AND METHOD FOR FABRICATING SAME | Non-Final OA | CHANGXIN MEMORY TECHNOLOGIES, INC. |
| 18190893 | MOS TRANSISTOR ON SOI STRUCTURE | Non-Final OA | STMicroelectronics (Crolles 2) SAS |
| 18470409 | STRUCTURE OF CHIP PACKAGE INTEGRATED ANTENNA AND MANUFACTURING METHOD THEREOF | Non-Final OA | Universal Global Technology (Shanghai) CO., Ltd. |
| 18038066 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF | Non-Final OA | Semiconductor Manufacturing International (Beijing) Corporation |
| 17173469 | IMAGE SENSOR HAVING A GRID STRUCTURE WITH SMALLER TOP WIDTH THAN BOTTOM WIDTH | Non-Final OA | VisEra Technologies Company Limited |
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