Tech Center 2800 • Art Units: 2896 2899
This examiner grants 84% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18387656 | SEMICONDUCTOR PACKAGE | Non-Final OA | SAMSUNG ELECTRONICS CO. LTD. |
| 18495179 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18236136 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | LG DISPLAY CO., LTD. |
| 18572437 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE | Non-Final OA | SONY GROUP CORPORATION |
| 18495189 | SEMICONDUCTOR DEVICE INCLUDING GATE DIELECTRICS OF DIFFERENT THICKNESSES AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18083064 | DIELECTRIC LAYER STACK FOR WIDE GATE CUT STRUCTURES | Non-Final OA | Intel Corporation |
| 18500254 | SEMICONDUCTOR STRUCTURE WITH CURVED SURFACES | Non-Final OA | Micron Technology, Inc. |
| 18133075 | Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells | Non-Final OA | Micron Technology, Inc. |
| 18180596 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18228333 | Micro-Electro-Mechanical System (MEMS) Thermal Sensor | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18338759 | Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18298351 | IMAGE SENSOR | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18495045 | GROWTH SUBSTRATE OF A DIODE ARRAY, INCLUDING MESAS HAVING DIFFERENT POROSIFICATION LEVELS | Non-Final OA | COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES |
| 18529842 | LIGHT-EMITTING DIODE STRUCTURE | Non-Final OA | Taiwan-Asia Semiconductor Corporation |
| 18381639 | STRUCTURE WITH CAPACITOR AND FIN TRANSISTOR AND FABRICATING METHOD OF THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18494922 | EDGE TERMINATION STRUCTURE FOR A CHARGE BALANCED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME | Non-Final OA | IDEAL SEMICONDUCTOR DEVICES, INC. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy