Tech Center 2800 • Art Units: 2800 2892 2896 2899
This examiner grants 84% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18678643 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18581186 | MEMORY DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18768857 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18650153 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE | Non-Final OA | Magnolia White Corporation |
| 18590303 | PACKAGE COMPRISING INTEGRATED DEVICES AND AN INTERCONNECTION DEVICE | Non-Final OA | QUALCOMM Incorporated |
| 18086232 | GLASS SUBSTRATE DEVICE WITH THROUGH GLASS CAVITY | Final Rejection | Intel Corporation |
| 18735984 | THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18686815 | LIGHT DETECTION DEVICE AND ELECTRONIC DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18578799 | IMAGING APPARATUS AND MANUFACTURING METHOD FOR THE SAME, AND ELECTRONIC EQUIPMENT | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18568635 | SEMICONDUCTOR DEVICE HAVING AN ELECTROSTATICALLY-BOUNDED ACTIVE REGION | Final Rejection | Microsoft Technology Licensing, LLC |
| 18649488 | GATE CONTACT FORMATION WITH SOURCE/DRAIN CONTACT ISOLATION | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18815042 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | SK hynix Inc. |
| 18619071 | SEMICONDUCTOR DEVICE WITH DUAL DAMASCENE AND DUMMY PADS | Non-Final OA | Micron Technology, Inc. |
| 18666761 | METHOD FOR FORMING THERMAL CONDUCTOR MATERIAL FILM AND STACKING STRUCTURE FORMD THEREWITH | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18651321 | INTEGRATED CIRCUIT PACKAGES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18591992 | SEMICONDUCTOR DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18495189 | SEMICONDUCTOR DEVICE INCLUDING GATE DIELECTRICS OF DIFFERENT THICKNESSES AND METHOD FOR MANUFACTURING THE SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18599797 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18732896 | DUAL FIELD EFFECT TRANSISTOR 4F2 CELL | Non-Final OA | Applied Materials, Inc. |
| 18599613 | SELECTION GATE STRUCTURE AND FABRICATION METHOD FOR 3D NAND | Non-Final OA | Applied Materials, Inc. |
| 18599794 | Aluminum Oxide Crystallization Barrier for Hybrid Bonding | Non-Final OA | Applied Materials, Inc. |
| 18599876 | PILLAR CRITICAL DIMENSION REDUCTION BY ISOTROPIC PLASMA ETCHING WITH HIGH SELECTIVITY TO SILICON-CONTAINING ANTIREFLECTIVE COATING AND SILICON NITRIDE | Non-Final OA | Tokyo Electron Limited |
| 18599877 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18728885 | HIGH-PRECISION HETEROGENEOUS INTEGRATION | Non-Final OA | Board of Regents, The University of Texas System |
| 18524599 | SINGLE COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR BACKPLANE TO SUPPORT MULTIPLE LIGHT EMITTING DIODE PIXEL SIZES | Non-Final OA | Lumileds LLC |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy