Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2891
This examiner grants 85% of resolved cases
Vincent Kipkemoi Rono works in Art Unit 2891 of Tech Center 2800. The examiner has a total of 20 resolved cases, with an allowance rate of 85.0 percent. While the case count of 20 is lower than some peers, the high allowance rate indicates a favorable environment for patent applicants. This 85.0 percent rate suggests that the examiner is inclined to grant patents when the technical requirements are met, providing a positive outlook for new filings.
The interview lift is 18.8 percent, suggesting that interviews are a beneficial part of the prosecution strategy. Engaging with the examiner may help in clarifying complex technical issues and moving the application toward a grant, as shown by the 18.8 percent lift in success. This indicates that the examiner values the additional context provided during oral discussions. Practitioners should consider scheduling an interview early in the process to align on claim scope and address any potential rejections efficiently.
The median days to allowance is 1390. This relatively long duration suggests that while the probability of allowance is high, the process itself may take a significant amount of time to conclude. The 1390-day median is a critical factor for applicants to consider when planning their long-term intellectual property strategy. It highlights the need for patience and consistent engagement throughout a prosecution cycle that spans several years before reaching a final grant.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18120038 | SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18085188 | NON-VOLATILE MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17875647 | SMALLER MODULE BY STACKING | Final Rejection | Avago Technologies International Sales Pte. Limited |
| 18844268 | SOLID-STATE IMAGING DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18178522 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18152938 | SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17691359 | SEMICONDUCTOR DEVICE STRUCTURE WITH GLUE LAYER AND METHOD FOR FORMING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18098547 | SUBSTRATE MODIFICATION FOR SUPERLATTICE CRITICAL THICKNESS IMPROVEMENT | Non-Final OA | Applied Materials, Inc. |
| 18422057 | Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide Thin Film | Final Rejection | Tsinghua University |
| 17929584 | DUAL SIDED MOLDED PACKAGE WITH VARYING INTERCONNECT PAD SIZES AND UNIFORM EXPOSED SOLDERABLE AREA | Non-Final OA | Skyworks Solutions, Inc. |
| 18008306 | THREE DIMENSIONAL FLASH MEMORY FOR IMPROVING LEAKAGE CURRENT | Non-Final OA | IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
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