Prosecution Insights
Last updated: October 02, 2026

Examiner: SMET, UYEN TRAN

Tech Center 2800 • Art Units: 2824

This examiner grants 93% of resolved cases

Analysis

Uyen Tran Smet has overseen 600 resolved cases in Art Unit 2824. The examiner maintains an exceptionally high allowance rate of 93.0 percent. This indicates a very high probability of success for applicants in Tech Center 2800. The 600 resolved cases provide a statistically robust profile that practitioners can rely on for their prosecution planning.

The interview lift is a minimal 3.2 percent, suggesting that interviews do not significantly change the already high likelihood of allowance. Practitioners may find that the 3.2 percent lift does not necessitate an interview unless there are specific, complex issues to resolve in Art Unit 2824. The baseline 93.0 percent allowance rate is already very strong.

Prosecution is also relatively fast, with a median days to allowance of 702. This duration of 702 days is a significant advantage for applicants in Tech Center 2800 who require rapid patent issuance. The efficiency shown across these resolved cases makes for a streamlined and predictable patent acquisition process.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

93.0%
Allow Rate
+25.0% vs TC avg
620
Total Applications
+3.2%
Interview Lift
702
Avg Prosecution Days
Based on 600 resolved cases, 2023–2026

Rejection Statute Breakdown

0.9%
§101 Eligibility
29.9%
§102 Novelty
55.8%
§103 Obviousness
6.8%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
19002360 SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME Non-Final OA SAMSUNG ELECTRONICS CO., LTD.
18892390 NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAME Non-Final OA Samsung Electronics Co., Ltd.
18156126 MEMORY DEVICE PERFORMING REFRESH OPERATION Non-Final OA SAMSUNG ELECTRONICS CO., LTD.
19029083 SEMICONDUCTOR DEVICE AND DYNAMIC LOGIC CIRCUIT Non-Final OA Semiconductor Energy Laboratory Co., Ltd.
18913146 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE Non-Final OA SK hynix Inc.
18800917 STORAGE DEVICE AND METHOD OF OPERATING THE STORAGE DEVICE Non-Final OA SK hynix Inc.
18651539 SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE Non-Final OA SK hynix Inc.
18623336 SEMICONDUCTOR DEVICE AND OPERATING METHOD OF THE SAME Non-Final OA SK hynix Inc.
18432269 MEMORY DEVICE Non-Final OA Kioxia Corporation
18460262 SEMICONDUCTOR MEMORY DEVICE Non-Final OA Kioxia Corporation
18327725 ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM Final Rejection Northwestern University
19005835 DETERMINE OPTIMIZED READ VOLTAGE VIA IDENTIFICATION OF DISTRIBUTION SHAPE OF SIGNAL AND NOISE CHARACTERISTICS Non-Final OA Micron Technology, Inc.
18988243 MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNIT Non-Final OA Micron Technology, Inc.
18630983 ACCELERATING CONFIGURATION UPDATES FOR MEMORY DEVICES Final Rejection Micron Technology, Inc.
18489775 RESUMING SUSPENDED PROGRAM OPERATIONS IN A MEMORY DEVICE Non-Final OA Micron Technology, Inc.
18749013 LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL Non-Final OA TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
18743529 HIGH-DENSITY MEMORY CELLS AND LAYOUTS THEREOF Non-Final OA Taiwan Semiconductor Manufacturing Co., Ltd.
18959802 Turbo Mode SRAM for High Performance Non-Final OA Taiwan Semiconductor Manufacturing Company Limited
18647612 PERFORMANCE SAVING DURING BLOCK JUMPING Final Rejection Sandisk Technologies Inc.
18231395 IN SITU DATA REFRESH WITHOUT ERASE/PROGRAM CYCLES Non-Final OA Sandisk Technologies, Inc.
18399571 MEMORY STORAGE DEVICE AND READING METHOD THEREOF Final Rejection Winbond Electronics Corp.

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