Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2824
This examiner grants 93% of resolved cases
Uyen Tran Smet has overseen 600 resolved cases in Art Unit 2824. The examiner maintains an exceptionally high allowance rate of 93.0 percent. This indicates a very high probability of success for applicants in Tech Center 2800. The 600 resolved cases provide a statistically robust profile that practitioners can rely on for their prosecution planning.
The interview lift is a minimal 3.2 percent, suggesting that interviews do not significantly change the already high likelihood of allowance. Practitioners may find that the 3.2 percent lift does not necessitate an interview unless there are specific, complex issues to resolve in Art Unit 2824. The baseline 93.0 percent allowance rate is already very strong.
Prosecution is also relatively fast, with a median days to allowance of 702. This duration of 702 days is a significant advantage for applicants in Tech Center 2800 who require rapid patent issuance. The efficiency shown across these resolved cases makes for a streamlined and predictable patent acquisition process.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19002360 | SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18892390 | NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18739530 | NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18156126 | MEMORY DEVICE PERFORMING REFRESH OPERATION | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 19029083 | SEMICONDUCTOR DEVICE AND DYNAMIC LOGIC CIRCUIT | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18432269 | MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18460262 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18327725 | ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM | Final Rejection | Northwestern University |
| 18913146 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18800917 | STORAGE DEVICE AND METHOD OF OPERATING THE STORAGE DEVICE | Non-Final OA | SK hynix Inc. |
| 18651539 | SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE | Non-Final OA | SK hynix Inc. |
| 18623336 | SEMICONDUCTOR DEVICE AND OPERATING METHOD OF THE SAME | Non-Final OA | SK hynix Inc. |
| 19005835 | DETERMINE OPTIMIZED READ VOLTAGE VIA IDENTIFICATION OF DISTRIBUTION SHAPE OF SIGNAL AND NOISE CHARACTERISTICS | Non-Final OA | Micron Technology, Inc. |
| 18988243 | MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNIT | Non-Final OA | Micron Technology, Inc. |
| 18630983 | ACCELERATING CONFIGURATION UPDATES FOR MEMORY DEVICES | Final Rejection | Micron Technology, Inc. |
| 18489775 | RESUMING SUSPENDED PROGRAM OPERATIONS IN A MEMORY DEVICE | Non-Final OA | Micron Technology, Inc. |
| 18749013 | LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18743529 | HIGH-DENSITY MEMORY CELLS AND LAYOUTS THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18959802 | Turbo Mode SRAM for High Performance | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18647612 | PERFORMANCE SAVING DURING BLOCK JUMPING | Final Rejection | Sandisk Technologies Inc. |
| 18231395 | IN SITU DATA REFRESH WITHOUT ERASE/PROGRAM CYCLES | Non-Final OA | Sandisk Technologies, Inc. |
| 18399571 | MEMORY STORAGE DEVICE AND READING METHOD THEREOF | Final Rejection | Winbond Electronics Corp. |
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