Prosecution Insights
Last updated: May 29, 2026

Shin-Etsu Handotai Co. Ltd.

14 pending office actions • 8 art units • 12 examiners • 0 of 14 (0%) have an AI response strategy ready • 22 patents granted in the last 365 days

Portfolio Summary

14
Total Pending OAs
9
Non-Final OAs
5
Final Rejections
0
Advisory / Quayle

Response Deadline Pressure

Based on the USPTO statutory response window for each pending office action. 14 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.

7
Overdue
2
Due this week
3
Due this month
2
Due in next 60 days
0
Due later

Deadline Fire Line

Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 14 of the docket's apps have a known mailing date.

-30dToday30d60d90d120d
Overdue (7)Due ≤ 7 days (2)Due ≤ 30 days (3)Due ≤ 60 days (2)

Case Difficulty Mix

Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.

0
Hard (0%)
11
Medium (79%)
2
Easy (14%)
1
Unknown (7%)

Rejection Statute Mix

BucketCases
§103 only9 (64%)
§102 only2 (14%)
§112 only2 (14%)
No statute on record1 (7%)

Industry Mix

How the docket's pending cases split across USPTO tech-center bands.

6
Life Sciences
43% of docket
0
Information Tech
0% of docket
0
Communications
0% of docket
5
Semiconductors
36% of docket
3
Mechanical / Eng
21% of docket
0
Business / Other
0% of docket

Time-on-OA Estimate

Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.

140 h
Manual time on pending OAs
28 h
Time saved (low, 20%)
49 h
Time saved (mid, 35%)
1.2 wks
FTE-weeks freed (mid)

Top Examiners on this docket

ExaminerApps on this docketAllow rateInterview lift
SONG, MATTHEW J 2 60.4% +14.0%
KIM, JAY C 2 48.8% +22.3%
WIECZOREK, MICHAEL P 1 54.8% +17.5%
ANDERSON II, STEVEN S 1 65.9% +35.2%
MARIN, JACOB RAUL 1 100.0% +0.0%
HAWKINS, JASON KHALIL 1 65.0% +45.2%
HUANG, STEVEN 1 47.3% +38.0%
BRATLAND JR, KENNETH A 1 56.3% +16.3%
QI, HUA 1 55.4% +23.7%
LEE, WOO KYUNG 1 80.9% +15.3%

Quick Wins (2)

Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 2 ordered by deadline are shown.

App #TitleExaminerDue in
18269646 METHOD FOR PRODUCING AN EPITAXIAL WAFER LEE, WOO KYUNG 37d overdue
18286691 SILICON WAFER MANUFACTURING METHOD MARIN, JACOB RAUL 6d

Interview Candidates (11)

Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 8 ordered by deadline are shown.

App #TitleExaminerDue in
18272253 SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTAL QI, HUA 38d overdue
18269646 METHOD FOR PRODUCING AN EPITAXIAL WAFER LEE, WOO KYUNG 37d overdue
18683339 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE SONG, MATTHEW J 26d overdue
18276463 METHOD FOR DETECTING SURFACE STATE OF RAW MATERIAL MELT, METHOD FOR PRODUCING SINGLE CRYSTAL, AND APPARATUS FOR PRODUCING CZ SINGLE CRYSTAL BRATLAND JR, KENNETH A 22d overdue
18876870 METHOD FOR GROWING DIAMOND LAYER AND MICROWAVE PLASMA CVD APPARATUS WIECZOREK, MICHAEL P 5d overdue
18283051 METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER HAWKINS, JASON KHALIL 2d overdue
18281044 METHOD FOR PROCESSING A WAFER AND WAFER HUANG, STEVEN 5d
18019916 METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILICON SINGLE-CRYSTAL SUBSTRATE SONG, MATTHEW J 13d

Top Art Units

Art UnitApps
1714 4
2815 3
3723 2
1712 1
3762 1
2818 1
1713 1
2812 1

Pending Office Actions

App #TitleExaminerArt UnitStatutesStatusDue inAIFiled
18876870 METHOD FOR GROWING DIAMOND LAYER AND MICROWAVE PLASMA CVD APPARATUS WIECZOREK, MICHAEL P 1712 §102 Non-Final OA 5d overdue Pending Dec 19, 2024
18683339 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE SONG, MATTHEW J 1714 §103 Non-Final OA 26d overdue Pending Feb 13, 2024
18572929 CLEAN ROOM ANDERSON II, STEVEN S 3762 §102 Non-Final OA 26d Pending Dec 21, 2023
18286691 SILICON WAFER MANUFACTURING METHOD MARIN, JACOB RAUL 2818 §103 Non-Final OA 6d Pending Oct 12, 2023
18283051 METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER HAWKINS, JASON KHALIL 3723 §103 Final Rejection 2d overdue Pending Sep 20, 2023
18281044 METHOD FOR PROCESSING A WAFER AND WAFER HUANG, STEVEN 3723 §103 Final Rejection 5d Pending Sep 08, 2023
18276463 METHOD FOR DETECTING SURFACE STATE OF RAW MATERIAL MELT, METHOD FOR PRODUCING SINGLE CRYSTAL, AND APPARATUS FOR PRODUCING CZ SINGLE CRYSTAL BRATLAND JR, KENNETH A 1714 §103 Non-Final OA 22d overdue Pending Aug 09, 2023
18272620 NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR KIM, JAY C 2815 §103 Non-Final OA 14d Pending Jul 17, 2023
18272621 NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR KIM, JAY C 2815 §112 Non-Final OA 33d Pending Jul 17, 2023
18272253 SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTAL QI, HUA 1714 Other Final Rejection 38d overdue Pending Jul 13, 2023
18269646 METHOD FOR PRODUCING AN EPITAXIAL WAFER LEE, WOO KYUNG 2815 §103 Final Rejection 37d overdue Pending Jun 26, 2023
18019916 METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILICON SINGLE-CRYSTAL SUBSTRATE SONG, MATTHEW J 1714 §103 Final Rejection 13d Pending Feb 06, 2023
17924248 METHOD FOR ETCHING SILICON WAFER PHAM, THOMAS T 1713 §112 Non-Final OA 99d overdue Pending Nov 09, 2022
17920937 METHOD FOR DRY-ETCHING SEMICONDUCTOR SUBSTRATE AND METHOD FOR DRY-ETCHING SILICON OXIDE FILM ANDERSON, ERIK ARTHUR 2812 §103 Non-Final OA 57d Pending Oct 24, 2022

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