Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2800 2817 2895
This examiner grants 84% of resolved cases
John P. Dulka is an examiner in Tech Center 2800, specifically Art Unit 2800. He has a high volume of 859 resolved cases. This extensive record provides a strong statistical basis for analyzing his examination trends in the fields of semiconductors and electronic components. His experience level suggests a consistent and predictable approach to the patent application process.
The examiner maintains a high allowance rate of 83.7 percent. This indicates a very favorable environment for applicants. Furthermore, he offers an interview lift of 12.4 percent. This lift shows that direct communication with Dulka is a productive strategy, as it increases the probability of allowance by a significant margin. Practitioners should consider the 12.4 percent lift as a reason to favor interviews when facing complex rejections.
The median days to allowance for his cases is 926. This is a relatively fast timeline for reaching a grant. The combination of an 83.7 percent allowance rate and a 926-day median suggests that Dulka is an efficient examiner who is likely to grant patents within a reasonable timeframe. The 12.4 percent interview lift can be utilized to further streamline the process and ensure that the high probability of success is realized as quickly as possible.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18308376 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18911277 | CHIP AND PREPARATION METHOD THEREOF, AND ELECTRONIC DEVICE | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 18910885 | METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE AND CORRESPONDING VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE | Non-Final OA | Robert Bosch GmbH |
| 18716559 | METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET | Non-Final OA | Robert Bosch GmbH |
| 18727145 | ALUMINUM NITRIDE-BASED HIGH POWER DEVICES AND METHODS OF MAKING THE SAME | Non-Final OA | Georgia Tech Research Corporation |
| 17957721 | INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS | Final Rejection | Intel Corporation |
| 18545188 | SEMICONDUCTOR DEVICE WITH STACKED DEVICE TYPES | Final Rejection | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18602163 | THERMAL CONDUCTIVE BONDING STRUCTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18745760 | Etch Profile Control Of Polysilicon Structures Of Semiconductor Devices | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18785009 | METAL-INSULATOR-METAL CAPACITORS WITH THICK INTERMEDIATE ELECTRODE LAYERS AND METHODS OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18715527 | SOLAR CELL FABRICATION | Non-Final OA | NATIONAL UNIVERSITY OF SINGAPORE |
| 18772644 | POWER CONVERSION CIRCUIT, POWER MODULE, CONVERTER, AND INVERTER | Non-Final OA | ROHM CO., LTD. |
| 18602039 | MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18790300 | HEATER, TEMPERATURE CONTROL SYSTEM, AND PROCESSING APPARATUS | Non-Final OA | Kokusai Electric Corporation |
| 18786378 | GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE | Non-Final OA | National Taiwan University |
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