Prosecution Insights
Prosecution Insights
Tech Center 3700 • Art Units: 1715 1718 1792 2898 3774
This examiner grants 72% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19008803 | METHOD AND APPARATUS FOR AREA-SELECTIVE DEPOSITION | Final Rejection | ASM IP Holding B.V. |
| 18524307 | SUBSTRATE PROCESSING METHOD | Final Rejection | ASM IP Holding B.V. |
| 17906731 | COMPOSITE SUBSTRATE AND PRODUCTION METHOD THEREFOR | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18832814 | METHOD FOR GROWING DIAMOND ON SILICON SUBSTRATE AND METHOD FOR SELECTIVELY GROWING DIAMOND ON SILICON SUBSTRATE | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 18678693 | DAMAGE RESISTANT CERAMIC MATRIX COMPOSITES | Final Rejection | RTX CORPORATION |
| 19056022 | CHEMICAL VAPOR DEPOSITION FOR UNIFORM TUNGSTEN GROWTH | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18935102 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING CHAMBERS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18233984 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND INCREASED DENSITY | Non-Final OA | Applied Materials, Inc. |
| 18228555 | MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION OF NANOCRYSTALLINE DIAMOND FILM | Non-Final OA | Applied Materials, Inc. |
| 18653410 | FILM-FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18333724 | FILM FORMING METHOD | Final Rejection | Tokyo Electron Limited |
| 18598293 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 17951205 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 17620213 | METHOD FOR PRODUCING A SHEET METAL PRODUCT AND SHEET METAL PRODUCT | Non-Final OA | ThyssenKrupp Steel Europe AG |
| 18847652 | LOW-K DIELECTRIC PROTECTION DURING PLASMA DEPOSITION OF SILICON NITRIDE | Final Rejection | Lam Research Corporation |
| 18551302 | SUBSTRATE TREATING METHOD AND TREATMENT LIQUID | Final Rejection | SCREEN Holdings Co., Ltd. |
| 18601338 | INHERENTLY SELECTIVE THERMAL ATOMIC LAYER DEPOSITION OF COPPER METAL FILMS | Final Rejection | WAYNE STATE UNIVERSITY |
| 17611754 | PLASMA ETCHING METHOD | Final Rejection | SHOWA DENKO K.K. |
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