Tech Center 2800 • Art Units: 2812 2821 2893
This examiner grants 82% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18378874 | SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18326628 | BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULATION REGION(S) | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18453932 | SEMICONDUCTOR DEVICE | Final Rejection | Mitsubishi Electric Corporation |
| 18455666 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 15882966 | SYSTEMS AND METHODS FOR FLEXIBLE COMPONENTS FOR POWERED CARDS AND DEVICES | Final Rejection | Dynamics Inc. |
| 18470472 | ANTIFUSE AND RESISTOR | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 17933000 | INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER | Non-Final OA | Intel Corporation |
| 18450636 | PACKAGE SUBSTRATE WITH METALLIZATION LAYER(S) THAT INCLUDES AN ADDITIONAL METAL PAD LAYER TO FACILITATE REDUCED VIA SIZE FOR REDUCED BUMP PITCH, AND RELATED INTEGRATED CIRCUIT (IC) PACKAGES AND FABRICATION METHODS | Non-Final OA | QUALCOMM Incorporated |
| 18494401 | ISOLATION OF P-GAN HEMT BY USE OF GATE RING | Non-Final OA | STMicroelectronics International N.V. |
| 18344363 | TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION THEREOF | Non-Final OA | NXP USA, Inc. |
| 18333632 | Low Contact Resistance in Semiconductor Devices with Implanted Regions | Final Rejection | Wolfspeed, Inc. |
| 18304869 | Power Semiconductor Devices Including Beryllium Metallization | Final Rejection | Wolfspeed, Inc. |
| 18464686 | COMBINED CHARGE BALANCE AND EDGE TERMINATION SURFACE PASSIVATION FOR A SEMICONDUCTOR DEVICE AND METHODS OF FABRICATING THE SAME | Non-Final OA | IDEAL SEMICONDUCTOR DEVICES, INC. |
| 18467481 | MULTI-CHIP MODULES FORMED USING WAFER-LEVEL PROCESSING OF A RECONSTITUTED WAFER | Non-Final OA | ADEIA SEMICONDUCTOR TECHNOLOGIES LLC |
| 18550343 | QUANTUM COMPONENT | Non-Final OA | C12 Quantum Electronics |
| 18236413 | ALL-NITRIDE-BASED EPITAXIAL STRUCTURE AND LIGHT-EMITTING DEVICE | Non-Final OA | Narvellux Technologies (ShenZhen) Co., LTD. |
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