Tech Center 2800 • Art Units: 2812 2821 2858 2891 2893
This examiner grants 82% of resolved cases
Syed I. Gheyas, in Tech Center 2800 and Art Unit 2812, has resolved 681 cases with an allowance rate of 82.5%. The median days to allowance is 745, which is a relatively fast timeline for successful applications. This 745-day figure and the 82.5% allowance rate indicate a streamlined prosecution process. Practitioners should use these metrics to plan their filing and response schedules in this art unit.
The interview lift is 3.9%, suggesting that interviews are not a major factor in achieving the 82.5% allowance rate. The data points to a process where most applications are allowed within the 745-day median timeframe. With 681 resolved cases, the profile reflects a stable and predictable environment. The 3.9% lift implies that standard written prosecution is typically sufficient for success. Applicants should weigh the 3.9% lift against the 82.5% baseline when deciding on their strategy.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18782267 | SEMICONDUCTOR PACKAGE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18670378 | SEMICONDUCTOR PACKAGE INCLUDING A DUMMY CHIP AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18663238 | INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18444592 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC SYSTEM | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18751037 | LIGHT EMITTING DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18425992 | LIGHT EMITTING DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18379027 | LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | LG DISPLAY CO., LTD. |
| 18450636 | PACKAGE SUBSTRATE WITH METALLIZATION LAYER(S) THAT INCLUDES AN ADDITIONAL METAL PAD LAYER TO FACILITATE REDUCED VIA SIZE FOR REDUCED BUMP PITCH, AND RELATED INTEGRATED CIRCUIT (IC) PACKAGES AND FABRICATION METHODS | Non-Final OA | QUALCOMM Incorporated |
| 18214252 | INTEGRATED CAPACITOR | Non-Final OA | Intel Corporation |
| 18128733 | DEVICE UNDER TEST (DUT) STRUCTURES IN FILL REGIONS OF PRODUCT DIE FOR VOLTAGE CONTRAST (VC) DEFECT DETECTION FOR IMPROVED YIELD LEARNING | Non-Final OA | Intel Corporation |
| 18752009 | High Voltage Switching Device | Non-Final OA | Murata Manufacturing Co., Ltd. |
| 18707813 | COMPONENT AND OPTOELECTRONIC DEVICE COMPRISING STRUCTURES FOR REDUCING OPTICAL CROSSTALK | Non-Final OA | ams-OSRAM International GmbH |
| 18737289 | Low Profile Power Module | Non-Final OA | Infineon Technologies AG |
| 18326628 | BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULATION REGION(S) | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18656209 | LOW-K ALD GAP-FILL METHODS AND MATERIAL | Non-Final OA | Lam Research Corporation |
| 18494401 | ISOLATION OF P-GAN HEMT BY USE OF GATE RING | Non-Final OA | STMicroelectronics International N.V. |
| 18418812 | METHODS OF FORMING INTERCONNECT STRUCTURES | Final Rejection | Applied Materials, Inc. |
| 18775934 | Silicon Carbide Wafers with Relaxed Positive Bow and Related Methods | Non-Final OA | Wolfspeed, Inc. |
| 18612356 | POWER DEVICES WITH BARRIER METAL EXTENSION AND SEALING | Non-Final OA | Wolfspeed, Inc. |
| 18304869 | Power Semiconductor Devices Including Beryllium Metallization | Final Rejection | Wolfspeed, Inc. |
| 18752267 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF | Non-Final OA | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
| 18676771 | OPTOELECTRONIC DEVICE COMPRISING LIGHT-EMITTING DIODES WITH IMPROVED LIGHT EXTRACTION | Non-Final OA | Aledia |
| 18225706 | SEMICONDUCTOR DEVICE | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18767418 | LATERAL BIPOLAR TRANSISTORS | Non-Final OA | GLOBALFOUNDRIES U.S. Inc. |
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