Tech Center 2800 • Art Units: 2811 2815 2818 2894
This examiner grants 95% of resolved cases
Jami Valentine Miller works in Tech Center 2800 and Art Unit 2811, where she has handled 1095 resolved cases. Her allowance rate is very high at 94.9%, making this a very favorable profile for applicants seeking patent grants. The median days to allowance is 725, which is quite efficient for the prosecution process and helps in planning rapid development cycles.
The interview lift is 3.9%, a low figure that reflects the already high 94.9% baseline allowance rate. With such a high probability of success, interviews provide only a marginal increase in the likelihood of allowance. Practitioners may find that Miller's examination process is straightforward and that most cases reach a positive outcome without the need for extensive verbal engagement in Tech Center 2800.
With 1095 resolved cases, the data is highly reliable and suggests a consistent examiner behavior. The 725-day median pendency and high success rate indicate a streamlined and applicant-friendly environment in Art Unit 2811. Strategy should focus on maintaining this efficiency, with interviews reserved for only the most complex technical issues that may arise during prosecution.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18792665 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE INCLUDING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18623666 | SEMICONDUCTOR PACKAGE AND PACKAGE MODULE INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18583006 | SEMICONDUCTOR DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 18843309 | DISPLAY MODULE AND DISPLAY DEVICE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18613363 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., Ltd. |
| 18085122 | LAYER TRANSFER TRANSISTOR FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY | Final Rejection | Intel Corporation |
| 18089838 | MEMORY DEVICE AND METHOD OF FORMING THE SAME | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 18583082 | BACK END OF THE LINE WIRING BETWEEN DEVICE LAYERS | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18307034 | MRAM WITH ASYMMETRIC STRUCTURE | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18770004 | SEMICONDUCTOR PACKAGE HAVING CHIP STACK STRUCTURE | Non-Final OA | SK hynix Inc. |
| 18588547 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Kioxia Corporation |
| 18788450 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18786568 | MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18772650 | TUNGSTEN VIA FOR A MAGNETIC TUNNEL JUNCTION INTERCONNECT | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18615459 | MAGNETIC TUNNEL JUNCTION DEVICES | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18772445 | MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18891694 | NEUROMORPHIC DEVICE | Non-Final OA | TDK CORPORATION |
| 18791383 | MAGNETIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18420694 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18519143 | LOW SWITCHING LOSS INVERTER CIRCUIT BOARD | Non-Final OA | Garrett Transportation I Inc. |
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