Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2825 2827
This examiner grants 93% of resolved cases
Examiner Fernando N. Hidalgo is assigned to Art Unit 2825 within Tech Center 2800. The data shows 1227 resolved cases for this examiner. An allowance rate of 93.4 percent is recorded for these matters. The median time to allowance is 633 days. These statistics offer a perspective on the prosecution results and timelines associated with this examiner. The 1227 resolved cases provide the foundation for the metrics presented. This volume of work allows for a further review of examiner tendencies.
The interview lift is 1.3 percent. This 1.3 percent lift can be compared to the 93.4 percent allowance rate to evaluate the effect of interviews. Practitioners may use the 633 days median to plan for the length of the prosecution cycle. In Art Unit 2825, the interview lift indicates how outcomes change when an interview occurs. This analysis of resolved cases helps in understanding the examiner's historical patterns. The relationship between the grant frequency and the impact of verbal communication is a central element of this profile.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18967166 | SCAN REGISTER CIRCUIT GENERATING POSITION INDEX SIGNAL THROUGH FAIL-BIT SCAN OPERATION AND MEMORY DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19062762 | COMPUTATIONAL STORAGE SYSTEM, METHOD OF OPERATING THEREOF, AND ELECTRONIC SYSTEM | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 19036332 | IMPEDANCE CALIBRATION CIRCUIT, MEMORY CONTROLLER INCLUDING THE IMPEDANCE CALIBRATION CIRCUIT AND MEMORY SYSTEM INCLUDING THE MEMORY CONTROLLER | Non-Final OA | SK hynix Inc. |
| 19033775 | MEMORY DEVICE AND METHOD OF APPLYING PASS VOLTAGE | Non-Final OA | SK hynix Inc. |
| 19033402 | CONTROLLER, MEMORY DEVICE, AND ELECTRONIC DEVICE | Non-Final OA | SK hynix Inc. |
| 18896156 | METHOD OF PROCESSING METADATA AND MEMORY DEVICE PERFORMING THE METHOD | Non-Final OA | SK hynix Inc. |
| 19042437 | MEMORY DEVICE WITH FAST WRITE MODE TO MITIGATE POWER LOSS | Non-Final OA | Micron Technology, Inc. |
| 18975658 | MEMORY SYSTEM REFRESH | Non-Final OA | Micron Technology, Inc. |
| 18789059 | UNIT CELL STRUCTURE FOR SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY | Non-Final OA | Micron Technology, Inc. |
| 19043906 | MEMORY CIRCUIT AND METHOD OF OPERATING SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 19009148 | BOOSTED WRITEBACK VOLTAGE | Non-Final OA | Rambus Inc. |
| 19012158 | EARLY PROGRAM TERMINATION FOR NAND SLC PROGRAM | Non-Final OA | Sandisk Technologies, Inc. |
| 18986018 | COMBINATION SINGLE-LEVEL CELL PROGRAM MODES TO IMPROVE CELL ENDURANCE | Non-Final OA | Sandisk Technologies, Inc. |
| 18222735 | PROGRAMMING TECHNIQUES IN A MEMORY DEVICE TO REDUCE A HYBRID SLC RATIO | Non-Final OA | SanDisk Technologies LLC |
| 19033306 | INTEGRATED IN-MEMORY COMPUTE CONFIGURED FOR EFFICIENT DATA INPUT AND RESHAPING | Non-Final OA | OpenAI Opco, LLC |
| 18821885 | A CONFIGURATION MEMORY CELL | Final Rejection | Microsemi SoC Corp. |
| 18920207 | 3D Ferroelectric Memory Structure and Method for Reading-Out the Memory Structure | Non-Final OA | IMEC VZW |
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