Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1713 1716 2815
This examiner grants 84% of resolved cases
Jiong-Ping Lu handles cases in Art Unit 1713 within Tech Center 2800. With 971 resolved cases, the examiner has a high allowance rate of 83.6 percent. This suggests a very positive outlook for applicants in this unit. The 83.6 percent rate indicates that the vast majority of applications reaching a final resolution are successful, making this a favorable environment for patent acquisition.
The interview lift is 7.8 percent. While interviews provide a benefit, the high baseline allowance rate of 83.6 percent suggests that success is often achieved through standard prosecution. Practitioners may still find interviews useful for clarification, even with a modest 7.8 percent lift. This figure indicates that while verbal engagement is helpful, it is not the primary driver of the high success rate seen in this unit.
The median days to allowance is 780. This is a relatively short timeline for reaching a grant, representing just over two years. The efficiency of this unit is demonstrated by both the 83.6 percent allowance rate and the 780-day median pendency. These metrics provide a strong foundation for predicting a fast and successful outcome for applications assigned to this examiner.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18436073 | ETCHING COMPOSITIONS | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 18982214 | DEPOSITION OF ORGANIC FILMS | Non-Final OA | ASM IP Holding B.V. |
| 18856974 | POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD | Non-Final OA | Resonac Corporation |
| 17797333 | CMP POLISHING LIQUID AND POLISHING METHOD | Non-Final OA | Resonac Corporation |
| 18840069 | ATOMIC LAYER ETCHING USING AN INHIBITOR | Non-Final OA | Lam Research Corporation |
| 18711773 | CONTROL OF ETCH PROFILES IN HIGH ASPECT RATIO HOLES VIA THERMAL ATOMIC LAYER ETCHING | Non-Final OA | Lam Research Corporation |
| 18732053 | SYSTEMS FOR PROCESSING ONE OR MORE SEMICONDUCTOR DEVICES, AND RELATED METHODS | Final Rejection | Micron Technology, Inc. |
| 18326494 | SUBSTRATE GRINDING TOOL AND METHODS OF OPERATION | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18315868 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND PHOTORESIST COMPOSITION | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18894665 | CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIALS TO REDUCE THICKNESS LOSS | Non-Final OA | Applied Materials, Inc. |
| 18819904 | TRENCH-BASED SUPER JUNCTION STRUCTURES VIA SIDEWALL DOPING | Non-Final OA | Applied Materials, Inc. |
| 18781125 | CONFORMAL SELECTIVE ETCHING OF SILICON OXIDE | Non-Final OA | Applied Materials, Inc. |
| 18602986 | PRIME STEP FOR METAL ETCH IN HIGH ASPECT-RATIO FEATURES | Non-Final OA | Applied Materials, Inc. |
| 18234685 | PLASMA ETCHING IN SEMICONDUCTOR PROCESSING | Non-Final OA | Applied Materials, Inc. |
| 18221505 | CYCLIC ETCH OF SILICON OXIDE AND SILICON NITRIDE | Non-Final OA | Applied Materials, Inc. |
| 18395132 | SINGLE MASK MULTI-CRITICAL DIMENSION ETCHING USING ETCH STOP | Non-Final OA | Tokyo Electron Limited |
| 18755022 | METHOD INCLUDING UNDER-ETCHING AN ION-INDUCED DAMAGE LAYER TO FACILITATE SEPARATION OF A SUBSTRATE FILM LAYER FROM AN UNDERLYING SUBSTRATE BULK REGION | Non-Final OA | Microchip Technology Incorporated |
| 18882306 | PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18851962 | ETCHING COMPOSITION, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18804184 | SILICA PARTICLES, PRODUCTION METHOD THEREFOR, SILICA SOL, POLISHING COMPOSITION, POLISHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | Non-Final OA | Mitsubishi Chemical Corporation |
| 18255530 | Chemical Mechanical Planarization (CMP) For Copper And Through-Silicon Via (TSV) | Final Rejection | Versum Materials US, LLC |
| 18840736 | POLISHING COMPOSITION | Non-Final OA | FUJIMI INCORPORATED |
| 18421013 | POLISHING COMPOSITION, POLISHING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE | Final Rejection | FUJIMI INCORPORATED |
| 17442712 | POLISHING COMPOSITION | Non-Final OA | FUJIMI INCORPORATED |
| 18680497 | POLISHING COMPOSITION AND METHOD FOR CONDUCTING A MATERIAL REMOVING OPERATION | Final Rejection | SAINT-GOBAIN CERAMICS & PLASTICS, INC. |
| 18821589 | SYSTEMS AND METHODS FOR IMPROVING THE BOILING HEAT TRANSFER OF A HEAT TRANSFER COIL | Non-Final OA | Rheem Manufacturing Company |
| 18778752 | POLYSILICON GATE ETCH METHOD | Non-Final OA | Shanghai Huali Integrated Circuit Corporation |
| 18547497 | Semiconductor Structures and Methods of Forming Them | Final Rejection | ChangXin Memory Technologies, Inc. |
| 18294174 | CHEMICAL-MECHANICAL COMBINED MACHINING METHOD FOR SILICON CARBIDE SURFACE | Non-Final OA | HUAQIAO UNIVERSITY |
| 18351031 | CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHOD FOR PREVENTING POLISHING PAD GROOVE CLOGGING | Non-Final OA | DuPont Electronic Materials Holding, Inc. |
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