Prosecution Insights
Prosecution Insights
Tech Center 1700 • Art Units: 1713 1716
This examiner grants 84% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18750176 | ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18436073 | ETCHING COMPOSITIONS | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 18389847 | SELECTIVE ETCHING METHOD AND ETCHING ASSEMBLY | Final Rejection | ASM IP Holding B.V. |
| 18680497 | POLISHING COMPOSITION AND METHOD FOR CONDUCTING A MATERIAL REMOVING OPERATION | Non-Final OA | SAINT-GOBAIN CERAMICS & PLASTICS, INC. |
| 18326494 | SUBSTRATE GRINDING TOOL AND METHODS OF OPERATION | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18315868 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND PHOTORESIST COMPOSITION | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18762702 | PROCESSES FOR REDUCING LINE-END SPACING | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18781125 | CONFORMAL SELECTIVE ETCHING OF SILICON OXIDE | Non-Final OA | Applied Materials, Inc. |
| 18602986 | PRIME STEP FOR METAL ETCH IN HIGH ASPECT-RATIO FEATURES | Non-Final OA | Applied Materials, Inc. |
| 18554225 | ETCHING METHOD AND PROCESSING DEVICE | Final Rejection | Tokyo Electron Limited |
| 18755022 | METHOD INCLUDING UNDER-ETCHING AN ION-INDUCED DAMAGE LAYER TO FACILITATE SEPARATION OF A SUBSTRATE FILM LAYER FROM AN UNDERLYING SUBSTRATE BULK REGION | Non-Final OA | Microchip Technology Incorporated |
| 18711773 | CONTROL OF ETCH PROFILES IN HIGH ASPECT RATIO HOLES VIA THERMAL ATOMIC LAYER ETCHING | Non-Final OA | Lam Research Corporation |
| 18750002 | THIN-FILM CRYSTALLINE STRUCTURE WITH SURFACES HAVING SELECTED PLANE ORIENTATIONS | Non-Final OA | Seagate Technology LLC |
| 18804184 | SILICA PARTICLES, PRODUCTION METHOD THEREFOR, SILICA SOL, POLISHING COMPOSITION, POLISHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | Non-Final OA | Mitsubishi Chemical Corporation |
| 18255975 | RECESS ETCHING SOLUTION, RECESS ETCHING METHOD, AND SURFACE-TREATED SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD | Final Rejection | MITSUBISHI GAS CHEMICAL COMPANY, INC. |
| 18686043 | POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD | Final Rejection | Resonac Corporation |
| 18294889 | POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD | Final Rejection | Resonac Corporation |
| 18264534 | POLISHING LIQUID, POLISHING LIQUID SET AND POLISHING METHOD | Non-Final OA | RESONAC CORPORATION |
| 18547497 | Semiconductor Structures and Methods of Forming Them | Final Rejection | ChangXin Memory Technologies, Inc. |
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