Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2800 2823 2824 2891 2897
This examiner grants 89% of resolved cases
Douglas M. Menz, in Tech Center 2800 and Art Unit 2800, has 794 resolved cases. The allowance rate is 88.7 percent, and the interview lift is 4.7 percent. This 88.7 percent rate suggests that most applications will eventually be allowed. The 4.7 percent lift, while modest, still provides a positive benefit for those who choose to interview compared to the 88.7 percent baseline.
The median days to allowance is 768, which is efficient compared to many other examiners. The 4.7 percent interview lift, while positive, is less critical given the 88.7 percent base allowance rate. Practitioners can expect a 768 day path to issuance. With 794 resolved cases, the examiner's efficiency and allowance rate are well-documented in Art Unit 2800. The 768 day timeline and 88.7 percent allowance rate make this a favorable environment for patent applicants.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18884528 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18850021 | DISPLAY SUBSTRATE AND DISPLAY DEVICE | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18687870 | MODULATION UNIT AND PREPARATION METHOD THEREOF, MODULATION DEVICE AND DRIVING METHOD THEREOF | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18587565 | DISPLAY APPARATUS | Non-Final OA | Samsung Display Co., Ltd. |
| 18756992 | DISPLAY APPARATUS AND METHOD OF FABRICATING THEREOF | Non-Final OA | LG Display Co., Ltd. |
| 17896912 | DISPLAY DEVICE | Final Rejection | LG Display Co., Ltd. |
| 18439005 | SEMICONDUCTOR DEVICE | Non-Final OA | SEIKO EPSON CORPORATION |
| 18633534 | ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | Non-Final OA | InnoLux Corporation |
| 18394137 | METHOD OF MANUFACTURING AN INTEGRATED DEVICE COMPRISING ANODIC POROUS OXIDE WITH LIMITED ROUGHNESS | Non-Final OA | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18316488 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE, IMAGE CAPTURING DEVICE, ELECTRONIC APPARATUS, AND MOVING BODY | Non-Final OA | CANON KABUSHIKI KAISHA |
| 18781723 | PACKAGE COMPRISING AN INTEGRATED DEVICE WITH BACK SIDE METALLIZATION INTERCONNECTS | Non-Final OA | QUALCOMM Incorporated |
| 18611416 | INTEGRATED DEVICE COMPRISING METALLIZATION PORTION | Non-Final OA | QUALCOMM Incorporated |
| 17956753 | DYNAMIC RANDOM-ACCESS MEMORY IN A MOLDING BENEATH A DIE | Non-Final OA | Intel Corporation |
| 17957204 | PACKAGE IO ESCAPE ROUTING ON A DISAGGREGATED SHORELINE | Non-Final OA | Altera Corporation |
| 18687904 | IMAGING DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18160086 | IMAGING DEVICE, MANUFACTURING METHOD, AND SUBSTRATE DIVIDING METHOD | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18690938 | RADIATION-EMITTING SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR COMPONENT | Non-Final OA | ams-OSRAM International GmbH |
| 18576757 | PHASE CHANGE MATERIAL | Final Rejection | NIPPON ELECTRIC GLASS CO., LTD. |
| 18385137 | NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIRCUITS | Final Rejection | STMicroelectronics International N.V. |
| 18545517 | GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS CONFIGURED WITH A LOW RESISTANCE CONTACT LAYER FOR SOURCE AND/OR DRAIN CONTACTS AND PROCESS FOR IMPLEMENTING THE SAME | Non-Final OA | Wolfspeed, Inc. |
| 18834600 | PHOTODETECTOR | Non-Final OA | HAMAMATSU PHOTONICS K.K. |
| 18641773 | Image Sensor with Visible Light and Short Wave Infrared Detection | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 18757647 | ORGANIC ELECTROLUMINESCENT DEVICES | Non-Final OA | Universal Display Corporation |
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