Tech Center 2800 • Art Units: 2812 2816 2817 2899
This examiner grants 90% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18564071 | DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18559674 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY SUBSTRATE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18551178 | HERMETIC PACKAGE DEVICE AND DEVICE MODULE | Non-Final OA | Mitsubishi Electric Corporation |
| 18470162 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18550994 | SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18192557 | METHODS TO IMPROVE QUALITY SILICON-CONTAINING MATERIALS | Final Rejection | Applied Materials, Inc. |
| 17994592 | NH RADICAL THERMAL NITRIDATION TO FORM METAL SILICON NITRIDE FILMS | Final Rejection | Applied Materials, Inc. |
| 17954565 | MOLECULAR LAYER DEPOSITION CARBON MASKS FOR DIRECT SELECTIVE DEPOSITION OF SILICON-CONTAINING MATERIALS | Final Rejection | Applied Materials, Inc. |
| 17941347 | FLUORINE-DOPED SILICON-CONTAINING MATERIALS | Non-Final OA | Applied Materials, Inc. |
| 17142641 | DOPED SILICON NITRIDE FOR 3D NAND | Non-Final OA | Applied Materials, Inc. |
| 18488979 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18463297 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17751363 | MEMORY STRUCTURE AND METHOD OF FORMING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17560062 | METAL INSULATOR METAL (MIM) CAPACITORS WITH PYROCHLORE-BASED INSULATORS FOR INTEGRATED CIRCUIT DIE & PACKAGES | Final Rejection | Intel Corporation |
| 18271898 | METHOD FOR FORMING SILICON-CONTAINING FILM AND FILM FORMING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 17865433 | ETCHING METHOD, PLASMA PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, AND PROGRAM | Non-Final OA | Tokyo Electron Limited |
| 17648431 | Atomic Layer Etching to Reduce Pattern Loading in High-K Dielectric Layer | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18228122 | SUBSTRATE PROCESSING METHOD | Non-Final OA | ASM IP Holding B.V. |
| 18199018 | SUBSTRATE PROCESSING METHOD | Final Rejection | ASM IP Holding B.V. |
| 17941278 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, AND RECORDING MEDIUM | Non-Final OA | KOKUSAI ELECTRIC CORPORATION |
| 17881772 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Non-Final OA | KOKUSAI ELECTRIC CORPORATION |
| 17746104 | SEMICONDUCTOR DEVICE INCLUDING EMBEDDED MEMORY DIES AND METHOD OF MAKING SAME | Final Rejection | SANDISK TECHNOLOGIES, INC. |
| 17905321 | CONTROL OF WAFER BOW DURING INTEGRATED CIRCUIT PROCESSING | Non-Final OA | Lam Research Corporation |
| 18559491 | METHOD FOR PROTECTING REACTIVE MATERIALS WITH ATOMICALLY THIN FILM | Non-Final OA | Cornell University |
| 17966946 | 3D HETEROGENEOUS INTEGRATIONS AND METHODS OF MAKING THEREOF | Final Rejection | BroadPak Corporation |
| 18564057 | INVERTER POWER MODULE | Non-Final OA | AMOSENSE CO., LTD. |
| 17781407 | POWER MODULE | Non-Final OA | Danfoss Silicon Power GmbH |
| 18327536 | METHOD FOR MANUFACTURING CAPACITOR STRUCTURE | Non-Final OA | TSMC CHINA COMPANY LIMITED |
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