Tech Center 4100 • Art Units: 2818 3726 4100
This examiner grants 100% of resolved cases
Katrina Marie Hester Waljeski-Moses is an examiner in Art Unit 2818, which is part of Tech Center 4100. The examiner has overseen 5 resolved cases, all of which have reached a successful conclusion. This results in an allowance rate of 100.0 percent, indicating a highly favorable environment for applicants in this unit. Every application in this small sample has successfully navigated the examination process.
The median days to allowance for these cases is 1012, providing a clear expectation for the time required to navigate the prosecution process. This duration is consistent across the examiner's small but successful docket. Practitioners can use this 1012 day figure to manage client expectations regarding the path to grant, as it represents the typical timeline for reaching an allowance in this portfolio.
Data for this examiner shows an interview lift of 0.0 percent. Given that the allowance rate is already 100.0 percent, the lack of lift suggests that written prosecution alone has been entirely effective in securing grants. Applicants may find that their current strategies are sufficient without the need for additional verbal intervention, although the 1012 day median remains the primary timeline for resolution.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18727604 | DISPLAY DEVICE | Non-Final OA | LG ELECTRONICS INC. |
| 18655714 | IMAGE SENSOR | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18634322 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR CHIP | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18409400 | WIPER FOR TRANSFERRING MICRO SEMICONDUCTOR CHIP AND APPARATUS FOR COLLECTING MICRO SEMICONDUCTOR CHIP | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18519551 | SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 17945534 | LAYER STRUCTURES INCLUDING CARBON-BASED MATERIAL, METHODS OF MANUFACTURING THE LAYER STRUCTURES, ELECTRONIC DEVICES INCLUDING THE LAYER STRUCTURES, AND ELECTRONIC APPARATUSES INCLUDING THE ELECTRONIC DEVICES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18558091 | DISPLAY SUBSTRATE AND DISPLAY DEVICE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18795635 | DISPLAY DEVICE AND MOBILE ELECTRONIC DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18529792 | SEMICONDUCTOR DEVICE | Final Rejection | Toshiba Electronic Devices & Storage Corporation |
| 18217123 | SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER | Non-Final OA | Intel Corporation |
| 18603935 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Mitsubishi Electric Corporation |
| 18743825 | SEMICONDUCTOR CIRCUIT, MEMORY SYSTEM, AND INFORMATION PROCESSING DEVICE | Non-Final OA | Kioxia Corporation |
| 18455732 | SEMICONDUCTOR STORAGE DEVICE | Final Rejection | Kioxia Corporation |
| 18455654 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 18588791 | CENTER-CONNECTION BONDED MEMORY ASSEMBLY AND METHODS FOR FORMING THE SAME | Non-Final OA | SANDISK TECHNOLOGIES LLC |
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