Tech Center 2800 • Art Units: 2825 2827
This examiner grants 96% of resolved cases
Michael Thanh Tran is an examiner in Tech Center 2800, Art Unit 2825. The examiner has 1526 resolved cases. The data shows an allowance rate of 95.8 percent and an interview lift of 0.4 percent. The median days to allowance for these cases is 595.
The 0.4 percent interview lift is a metric that can be compared to the 95.8 percent base allowance rate. This indicates that conducting an interview is a method for increasing the likelihood of an allowance. The 595 day median pendency is the timeframe applicants can expect when navigating the resolved cases handled by this examiner in Art Unit 2825. Practitioners can consider how these metrics influence the overall prosecution timeline.
With 1526 resolved cases, the examiner's statistics provide a view of the prosecution landscape. Practitioners can use the 95.8 percent allowance rate to assess the probability of a grant. The 0.4 percent lift and the Tech Center 2800 environment are factors for prosecution strategy. These data points help in setting expectations for clients.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19031610 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18977477 | Overlapping a Page Operation with a Processing-in-Memory Computation | Non-Final OA | Google LLC |
| 18305147 | LOW CONTENTION CURRENT CIRCUITS | Non-Final OA | Intel Corporation |
| 18988329 | APPARATUSES AND METHODS FOR TRACKING WORD LINE ACCESSES | Non-Final OA | Lodestar Licensing Group LLC |
| 19027728 | SEMICONDUCTOR MEMORY DEVICE WITH MEMORY CELLS EACH INCLUDING A CHARGE ACCUMULATION LAYER AND A CONTROL GATE | Non-Final OA | KIOXIA CORPORATION |
| 19008810 | ALL LEVEL COARSE/FINE PROGRAMMING OF MEMORY CELLS | Non-Final OA | Micron Technology, Inc. |
| 18990013 | READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES | Non-Final OA | Micron Technology, Inc. |
| 18819191 | ANALOG STORAGE USING MEMORY DEVICE | Non-Final OA | Micron Technology, Inc. |
| 18808566 | TRACK CHARGE LOSS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED IN CALIBRATION OPERATIONS | Non-Final OA | Micron Technology, Inc. |
| 18803290 | IDENTIFY THE PROGRAMMING MODE OF MEMORY CELLS DURING READING OF THE MEMORY CELLS | Non-Final OA | Micron Technology, Inc. |
| 18990122 | SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 19006992 | SHARED DECODER CIRCUIT AND METHOD | Non-Final OA | TSMC NANJING COMPANY, LIMITED |
| 19000707 | MEMORY TESTING SYSTEM AND MEMORY TESTING METHOD | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18771471 | SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETIZATION ROTATIONAL TYPE MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND MAGNETIZATION ROTATION METHOD | Non-Final OA | TDK CORPORATION |
| 18897573 | WORD LINE ZONE ERASE TECHNIQUES FOR MEMORY DEVICES | Final Rejection | Sandisk Technologies, Inc. |
| 18973648 | CURRENT-CONTROLLED ANALOG MEMORY CIRCUITS BUILT FROM NON-VOLATILE MEMORY ELEMENTS | Non-Final OA | University of Tennessee Research Foundation |
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