Prosecution Insights
Last updated: October 02, 2026

Examiner: TRAN, MICHAEL THANH

Tech Center 2800 • Art Units: 2825 2827

This examiner grants 96% of resolved cases

Analysis

Michael Thanh Tran is an examiner in Tech Center 2800, Art Unit 2825. The examiner has 1526 resolved cases. The data shows an allowance rate of 95.8 percent and an interview lift of 0.4 percent. The median days to allowance for these cases is 595.

The 0.4 percent interview lift is a metric that can be compared to the 95.8 percent base allowance rate. This indicates that conducting an interview is a method for increasing the likelihood of an allowance. The 595 day median pendency is the timeframe applicants can expect when navigating the resolved cases handled by this examiner in Art Unit 2825. Practitioners can consider how these metrics influence the overall prosecution timeline.

With 1526 resolved cases, the examiner's statistics provide a view of the prosecution landscape. Practitioners can use the 95.8 percent allowance rate to assess the probability of a grant. The 0.4 percent lift and the Tech Center 2800 environment are factors for prosecution strategy. These data points help in setting expectations for clients.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

95.8%
Allow Rate
+27.8% vs TC avg
1,540
Total Applications
+0.4%
Interview Lift
595
Avg Prosecution Days
Based on 1526 resolved cases, 2023–2026

Rejection Statute Breakdown

2.8%
§101 Eligibility
55.8%
§102 Novelty
12.4%
§103 Obviousness
6.0%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
19031610 SEMICONDUCTOR DEVICE Non-Final OA Samsung Electronics Co., Ltd.
18977477 Overlapping a Page Operation with a Processing-in-Memory Computation Non-Final OA Google LLC
18305147 LOW CONTENTION CURRENT CIRCUITS Non-Final OA Intel Corporation
18988329 APPARATUSES AND METHODS FOR TRACKING WORD LINE ACCESSES Non-Final OA Lodestar Licensing Group LLC
19027728 SEMICONDUCTOR MEMORY DEVICE WITH MEMORY CELLS EACH INCLUDING A CHARGE ACCUMULATION LAYER AND A CONTROL GATE Non-Final OA KIOXIA CORPORATION
19008810 ALL LEVEL COARSE/FINE PROGRAMMING OF MEMORY CELLS Non-Final OA Micron Technology, Inc.
18990013 READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES Non-Final OA Micron Technology, Inc.
18819191 ANALOG STORAGE USING MEMORY DEVICE Non-Final OA Micron Technology, Inc.
18808566 TRACK CHARGE LOSS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED IN CALIBRATION OPERATIONS Non-Final OA Micron Technology, Inc.
18803290 IDENTIFY THE PROGRAMMING MODE OF MEMORY CELLS DURING READING OF THE MEMORY CELLS Non-Final OA Micron Technology, Inc.
18990122 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF Non-Final OA Taiwan Semiconductor Manufacturing Company, Ltd.
19006992 SHARED DECODER CIRCUIT AND METHOD Non-Final OA TSMC NANJING COMPANY, LIMITED
19000707 MEMORY TESTING SYSTEM AND MEMORY TESTING METHOD Non-Final OA NANYA TECHNOLOGY CORPORATION
18771471 SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETIZATION ROTATIONAL TYPE MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND MAGNETIZATION ROTATION METHOD Non-Final OA TDK CORPORATION
18897573 WORD LINE ZONE ERASE TECHNIQUES FOR MEMORY DEVICES Final Rejection Sandisk Technologies, Inc.
18973648 CURRENT-CONTROLLED ANALOG MEMORY CIRCUITS BUILT FROM NON-VOLATILE MEMORY ELEMENTS Non-Final OA University of Tennessee Research Foundation

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