Tech Center 2800 • Art Units: 2815
This examiner grants 46% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18481443 | INTEGRATED CIRCUIT INCLUDING STANDARD CELLS AND METHOD OF DESIGNING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18178401 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17954394 | SEMICONDUCTOR MEMORY DEVICE HAVING A MULTI-LAYER TOP ELECTRODE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17831530 | SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN WITH INTEGRATED CONDUCTIVE STRUCTURE AND INTERCONNECTION | Final Rejection | SAMSUNG ELECTRONICS CO. |
| 18609459 | PACKAGE SUBSTRATE | Non-Final OA | QUALCOMM Incorporated |
| 18289646 | DISPLAY DEVICE, DISPLAY MODULE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING DISPLAY DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18590248 | ELECTRONIC ELEMENT MOUNTING SUBSTRATE, ELECTRONIC DEVICE, AND ELECTRONIC MODULE FOR IMPROVING AND OBTAINING LONG-TERM RELIABILITY | Non-Final OA | KYOCERA Corporation |
| 18350747 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | SK hynix Inc. |
| 18331177 | THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE INCLUDING DUMMY CHANNEL FILMS | Non-Final OA | SK hynix Inc. |
| 17717959 | SEMICONDUCTOR DEVICE INCLUDING DUAL CONTACT PLUG AND METHOD FOR FABRICATING THE SAME | Non-Final OA | SK hynix Inc. |
| 17464460 | SEMICONDUCTOR MEMORY STRUCTURES HAVING A GREATER SOURCE AREA | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17377772 | METHOD OF FORMING OXIDIZED REGION OF ANTI-FUSE MEMORY CELL | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18232719 | METHOD OF FORMING BIOLOGICAL FIELD EFFECT TRANSISTORS INTEGRATED WITH HEATERS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17107420 | METHOD OF FORMING BIOLOGICAL FIELD EFFECT TRANSISTORS INTEGRATED WITH HEATERS | Non-Final OA | Taiwan Semiconductor manufacturing Co., Ltd. |
| 17854456 | CO-DOPING TO CONTROL WET ETCH RATE OF FCVD OXIDE LAYERS | Final Rejection | Applied Materials, Inc. |
| 17457597 | APPARATUS FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT RESISTANCE | Final Rejection | Applied Materials, Inc. |
| 18532754 | BACKSIDE GATE CONTACT AND BACKSIDE CROSS-COUPLE CONNECT | Non-Final OA | International Business Machines Corporation |
| 18637729 | METHOD OF MANUFACTURING MEMORY DEVICE HAVING WORD LINES WITH IMPROVED RESISTANCE | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 17580610 | MEMORY DEVICE HAVING PROCTECTIVE STRUCTURE SURROUNDING BIT-LINE CONTACT AND METHOD OF FORMING THE SAME | Non-Final OA | Winbond Electronics Corp. |
| 17843077 | Etching Composition for Silicon Nitride Layer and Etching Method Using the Same | Final Rejection | Industry-Academic Cooperation Foundation, Yonsei University |
| 18169761 | 3D INTEGRATED CHARGE-COUPLED DEVICE MEMORY AND METHOD OF FABRICATING THE SAME | Non-Final OA | IMEC VZW |
| 18111412 | SEMICONDUCTOR DEVICE HAVING A MULTI-PURPOSE CAPACITIVE STRUCTURE | Final Rejection | AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD. |
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