Tech Center 2800 • Art Units: 2815
This examiner grants 47% of resolved cases
Scott E. Bauman examines applications in Art Unit 2815 within Tech Center 2800. He has reached a final resolution in 189 cases, providing a solid basis for analyzing his prosecution trends. The allowance rate pct of 47.1 indicates a challenging environment where fewer than half of the applications result in a patent grant. This 47.1 percent rate suggests that applicants must be prepared for rigorous examination and potential rejections. The median days to allowance is 1306, reflecting a very long prosecution timeline for successful cases. This 1306-day median indicates that practitioners should expect an extended period of back and forth before reaching a favorable outcome in Tech Center 2800.
The interview lift pct of 27.1 is a key metric for developing a successful strategy. This substantial lift indicates that engaging in an interview is highly correlated with an increased probability of allowance compared to cases without verbal negotiation. By utilizing an interview, applicants can significantly improve their chances of success beyond the 47.1 percent baseline. Given the 189 resolved cases, this 27.1 percent lift is a reliable indicator that direct communication is an effective tool in Art Unit 2815. Practitioners should consider an interview as a primary tactic to overcome obstacles and potentially expedite the 1306-day median wait time. The data underscores the importance of proactive advocacy in this challenging examination environment.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18133964 | SEMICONDUCTOR DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 17936552 | SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 17954394 | SEMICONDUCTOR MEMORY DEVICE HAVING A MULTI-LAYER TOP ELECTRODE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17931880 | SEMICONDUCTOR DEVICES | Final Rejection | Samsung Electronics Co., Ltd. |
| 17831530 | SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN WITH INTEGRATED CONDUCTIVE STRUCTURE AND INTERCONNECTION | Final Rejection | SAMSUNG ELECTRONICS CO. |
| 18230565 | DISPLAY APPARATUS | Final Rejection | SAMSUNG DISPLAY CO., LTD. |
| 17964900 | OLED PANEL FOR LIGHTING DEVICE WITH MOISTURE INTRUSION DELAY EFFECT | Final Rejection | LG Display Co., Ltd. |
| 18609459 | PACKAGE SUBSTRATE | Non-Final OA | QUALCOMM Incorporated |
| 18289646 | DISPLAY DEVICE, DISPLAY MODULE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING DISPLAY DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18350747 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | SK hynix Inc. |
| 17891026 | METHOD OF FORMING A SELECTOR PATTERN BY ION IMPLANTATION INTO AN OXIDIZED SILICON-CONTAINING LAYER | Final Rejection | SK hynix Inc. |
| 17717959 | SEMICONDUCTOR DEVICE INCLUDING DUAL CONTACT PLUG AND METHOD FOR FABRICATING THE SAME | Non-Final OA | SK hynix Inc. |
| 15913621 | ELECTRONIC CIRCUIT WITH GUARD FEATURES FOR RELIABILITY IN HUMID ENVIRONMENTS | Final Rejection | Texas Instruments Incorporated |
| 18583209 | SEMICONDUCTOR DEVICE AND METHODS OF FORMATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17584716 | MEMORY DEVICE WITH DUAL CHANNEL TRANSISTOR | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 17464460 | SEMICONDUCTOR MEMORY STRUCTURES HAVING A GREATER SOURCE AREA | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18232719 | METHOD OF FORMING BIOLOGICAL FIELD EFFECT TRANSISTORS INTEGRATED WITH HEATERS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18364614 | METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARIZATION | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17107420 | METHOD OF FORMING BIOLOGICAL FIELD EFFECT TRANSISTORS INTEGRATED WITH HEATERS | Non-Final OA | Taiwan Semiconductor manufacturing Co., Ltd. |
| 18043196 | MESA AVALANCHE PHOTODIODE WITH SIDEWALL PASSIVATION | Non-Final OA | NATIONAL RESEARCH COUNCIL OF CANADA |
| 17363015 | ONE-TIME PROGRAMMABLE MEMORY DEVICE HAVING GATE STRUCTURES ON SHALLOW TRENCH ISOLATION AND SUBSTRATE | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18169761 | 3D INTEGRATED CHARGE-COUPLED DEVICE MEMORY AND METHOD OF FABRICATING THE SAME | Non-Final OA | IMEC VZW |
| 18065632 | ANTIFUSE DEVICES WITH ADJACENT DUMMY STRUCTURES AND METHODS OF MAKING THEREOF | Final Rejection | GlobalFoundries Singapore Pte. Ltd. |
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