Tech Center 2800 • Art Units: 2814
This examiner grants 88% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18380854 | SEMICONDUCTOR PACKAGE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18380848 | SEMICONDUCTOR DEVICES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18462851 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18231284 | VERTICAL MEMORY DEVICE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18117891 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18396224 | SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18343127 | STRUCTURE AND METHOD FOR MAXIMIZING AIR GAP IN BACK END OF THE LINE INTERCONNECT THROUGH VIA LANDING MODIFICATION | Final Rejection | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 16940117 | SOURCE/DRAIN CONTACTS FOR NON-PLANAR TRANSISTORS | Non-Final OA | Intel Corporation |
| 18327628 | OPTIMIZED FIN HEIGHT FOR FINFET TRANSISTOR AND METHOD OF FABRICATING THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18457975 | SEMICONDUCTOR GAP FILL AND PLANARIZATION | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18149265 | Via Structures | Final Rejection | Taiwan Semiconductor Manufacturing Co. Ltd. |
| 17818230 | EPITAXIAL FEATURES OF SEMICONDUCTOR DEVICES | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18391666 | OPTICAL MODULES AND NEAR-EYE DISPLAY | Non-Final OA | Industrial Technology Research Institute |
| 17876608 | DISPLAY PANEL AND DISPLAY DEVICE | Non-Final OA | TCL China Star Optoelectronics Technology Co., Ltd. |
| 18464287 | MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18355029 | SELF-ALIGNED LINE-AND-VIA STRUCTURE AND METHOD OF MAKING THE SAME | Non-Final OA | SANDISK TECHNOLOGIES LLC |
| 18357797 | FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18520979 | IN-SITU DEPOSITION OF OXIDE PASSIVATION LAYER ON III-NITRIDE BASED HEMT | Non-Final OA | University of South Carolina |
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