Prosecution Insights
Prosecution Insights
Tech Center 4100 • Art Units: 2812 4100
This examiner grants 73% of resolved cases
Dmitri Mihaliov is an examiner in Tech Center 4100 and Art Unit 2812. The data shows 29 resolved cases for this examiner. These cases result in an allowance rate of 75.9 percent. This 75.9 percent allowance rate serves as a metric for practitioners to evaluate the likelihood of a patent grant when an application is assigned to this examiner.
The interview lift is 31.8 percent. This 31.8 percent lift indicates the increase in the probability of allowance associated with conducting an interview. Practitioners may consider this figure when determining the value of direct communication during the prosecution process. The allowance rate and the lift together provide a statistical overview of the examiner's disposition toward applications.
The median days to allowance is 1240. This 1240-day figure represents the middle point of the time required to reach an allowance for the cases handled by this examiner. With 29 resolved cases as the sample, the timeline offers a basis for planning. Practitioners can use this metric to set expectations for the duration of the legal process in Tech Center 4100.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18776531 | SEMICONDUCTOR PACKAGE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18594543 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18815554 | ISOLATOR | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 17987623 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 17980472 | A LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF INCLUDING A LOW-LEVEL VOLTAGE POWER LINE DISPOSED ON A SUBPIXEL SUBSTRATE AND A DISPLAY PANEL COMPRISING INVERTED GROUPS OF SUBPIXELS | Non-Final OA | LG Display Co., Ltd. |
| 17485325 | OXIDE LAYER DOPING ON A SUB CHANNEL OF A TRANSISTOR STRUCTURE | Non-Final OA | Intel Corporation |
| 17485202 | CMOS INTEGRATION OF 2D MATERIAL BY END ETCH | Non-Final OA | Intel Corporation |
| 17694889 | LIGHT-EMITTING ELEMENT WITH INTERMEDIATE LAYER BETWEEN SEMICONDUCTOR LAYERS AND DISPLAY DEVICE INCLUDING THE SAME | Non-Final OA | POSTECH Research and Business Development Foundation |
| 18757262 | IMAGE SENSING DEVICE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | SK hynix Inc. |
| 18420600 | FORMING OF AN ELECTRONIC POWER COMPONENT | Non-Final OA | STMicroelectronics International N.V. |
| 18404290 | SEMICONDUCTOR STRUCTURE INCLUDING MICRO WELLS WITH DIFFERENT HEIGHTS | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18882731 | SEMICONDUCTOR DEVICE | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18291799 | IMPURITY REDUCTION TECHNIQUES IN GALLIUM NITRIDE REGROWTH | Final Rejection | Analog Devices, Inc. |
| 18168985 | Vias for Semiconductor Devices Formed from Multiple Etching | Non-Final OA | Wolfspeed, Inc. |
| 18787369 | OXIDATION AND CORROSION PREVENTION IN SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE ASSEMBLIES | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 17898664 | STANDARD CELL STRUCTURE | Non-Final OA | Invention And Collaboration Laboratory Pte. Ltd. |
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