Tech Center 2800 • Art Units: 2812
This examiner grants 68% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 17987623 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 17980472 | A LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF INCLUDING A LOW-LEVEL VOLTAGE POWER LINE DISPOSED ON A SUBPIXEL SUBSTRATE AND A DISPLAY PANEL COMPRISING INVERTED GROUPS OF SUBPIXELS | Final Rejection | LG Display Co., Ltd. |
| 17818395 | PRE-PLATED LEAD TIP FOR WETTABLE FLANK LEADFRAME | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18214526 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., Ltd. |
| 18260673 | A SEMICONDUCTOR PACKAGE AND IT'S METHOD OF MANUFACTURING FEATURING AN IMAGING ELEMENT AND A FRAME WHICH PARTIALLY EXTENDS INWARDLY, BOTH MOUNTED ON A SUBSTRATE | Final Rejection | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 17887499 | A Semiconductor Package Comprising An Underfill Material That Extends to, And is Coplanar With, A Bottom Surface Of An Electrical Device | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17485325 | OXIDE LAYER DOPING ON A SUB CHANNEL OF A TRANSISTOR STRUCTURE | Non-Final OA | Intel Corporation |
| 17901732 | SEMICONDUCTOR DEVICE | Final Rejection | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18336388 | SEMICONDUCTOR STORAGE DEVICE | Non-Final OA | Kioxia Corporation |
| 18303503 | VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | Non-Final OA | SK hynix Inc. |
| 17843674 | THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRCASE STRUCTURE AND METHOD FOR FORMING THE SAME | Final Rejection | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18331305 | NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING | Non-Final OA | Taiwan Semiconductor Manufacturing Co, Ltd. |
| 17898664 | STANDARD CELL STRUCTURE | Non-Final OA | Invention And Collaboration Laboratory Pte. Ltd. |
| 18168985 | Vias for Semiconductor Devices Formed from Multiple Etching | Final Rejection | Wolfspeed, Inc. |
| 18350465 | A METHOD FOR GRAPHENE LAYER GROWTH AND SIMULTANEOUS MOLYBDENUM SILICIDE FORMATION ON A SEMICONDUCTOR DEVICE | Non-Final OA | Consiglio Nazionale Delle Ricerche |
| 18023185 | COMPOUND SEMICONDUCTOR SUBSTRATE AND COMPOUND SEMICONDUCTOR DEVICE COMPRISING A Si SUBSTRATE A SiC LAYER, NITRIDE SEMICONDUCTOR LAYERS, AN ELECTRONIC TRAVELING LAYER, AND A BARRIER LAYER | Final Rejection | AIR WATER INC. |
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