Prosecution Insights
Last updated: May 29, 2026

Examiner: WARD, ERIC A

Tech Center 2800 • Art Units: 2891

This examiner grants 78% of resolved cases

Performance Statistics

77.5%
Allow Rate
+9.5% vs TC avg
761
Total Applications
+13.5%
Interview Lift
906
Avg Prosecution Days
Based on 733 resolved cases, 2023–2026

Rejection Statute Breakdown

0.3%
§101 Eligibility
6.1%
§102 Novelty
87.2%
§103 Obviousness
3.7%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
18497446 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE Non-Final OA Samsung Electronics Co., Ltd.
18489189 SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FABRICATING THE SAME Non-Final OA Samsung Electronics Co., Ltd.
17806959 GAN DEVICE WITH EXTENDED DRAIN CONTACT Non-Final OA TEXAS INSTRUMENTS INCORPORATED
18518846 ELECTRONIC COMPONENT AND PACKAGE INCLUDING STRESS RELEASE STRUCTURE AS LATERAL EDGE PORTION OF SEMICONDUCTOR BODY Non-Final OA Infineon Technologies AG
17876271 MEMORY DEVICE INCLUDING PREFORMED RECESSES BETWEEN CONTACT STRUCTURES AND CONTROL GATES Non-Final OA Micron Technology, Inc.
18241413 SEMICONDUCTOR DEVICE AND ISOLATION STRUCTURE AND CONTACT ETCH STOP LAYER THEREOF Final Rejection Taiwan Semiconductor Manufacturing Company, Ltd.
18454328 SEMICONDUCTOR DEVICE TERMINATION STRUCTURES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE TERMINATION STRUCTURES Final Rejection SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
17931770 SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE Non-Final OA SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
17951711 Barrier Structure for Sub-100 Nanometer Gate Length Devices Final Rejection MACOM Technology Solutions Holdings, Inc.
18226764 HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF Non-Final OA Vanguard International Semiconductor Corporation
18552625 THREE-DIMENSIONAL FLASH MEMORY HAVING IMPROVED STACK CONNECTION PART AND METHOD FOR MANUFACTURING SAME Non-Final OA IUCF-HYU (Industry University Cooperation Foundation Hanyang University)
18267872 ELECTRONIC SEMICONDUCTOR COMPONENT, AND METHOD FOR MANUFACTURING A PRETREATED COMPOSITE SUBSTRATE FOR AN ELECTRONIC SEMICONDUCTOR COMPONENT Non-Final OA MI2-FACTORY GMBH
17918839 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Non-Final OA GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.

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