Prosecution Insights
Prosecution Insights
Tech Center 4100 • Art Units: 2824 4100
This examiner grants 92% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19015068 | MEMORY DEVICE, MEMORY SYSTEM, AND ERASING METHOD OF THE MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 19054326 | DIES, SEMICONDUCTOR PACKAGE STRUCTURES, ENABLE PIN CONFIGURATION METHODS AND MEMORIES | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 19013883 | VOLTAGE GENERATION CIRCUIT, MEMORY DEVICE, AND MEMORY SYSTEM | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18948012 | THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR READING THE SAME | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 18336683 | LEAKAGE REDUCTION FOR CONTINUOUS ACTIVE DESIGNS | Non-Final OA | International Business Machines Corporation |
| 18980715 | MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18810223 | SEMICONDUCTOR MEMORY DEVICE | Final Rejection | Kioxia Corporation |
| 19069218 | MEMORY DEVICES WITH FINE-GRAINED COMMAND/ADDRESS TRAINING MODES | Non-Final OA | Micron Technology, Inc. |
| 19024002 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL | Non-Final OA | Micron Technology, Inc. |
| 19022900 | INDICATION FOR EXITING REFRESH OF AN INVALID MEMORY BLOCK | Non-Final OA | Micron Technology, Inc. |
| 18800552 | CONTINUOUS MEMORY PROGRAMMING OPERATIONS | Non-Final OA | Micron Technology, Inc. |
| 18789162 | PROGRAMMING MEMORY CELLS BASED ON CONTEXT IN A MEMORY ARRAY | Non-Final OA | Micron Technology, Inc. |
| 18744335 | EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY DEVICES | Non-Final OA | Micron Technology, Inc. |
| 19069048 | ONE TIME PROGRAMMABLE MEMORY | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18615866 | MEMORY DEVICE AND METHOD | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18994560 | MULTI-CHANNEL MEMORY STACK WITH SHARED DIE | Non-Final OA | Rambus Inc. |
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