Tech Center 2800 • Art Units: 2812
This examiner grants 96% of resolved cases
Nathalie Renee Fayette demonstrates an allowance rate of 96.0% across 50 resolved cases in Tech Center 2800. This 96.0% rate in Art Unit 2812 indicates that a portion of applications reaching a resolution result in a grant. The median days to allowance is 1214, which establishes the timeframe for these outcomes. For the 50 resolved cases, the 1214 median days to allowance represents the expectation for applicants in Tech Center 2800.
The interview lift of 5.7% is a factor, though its impact is viewed alongside the base rate. With this history, the data shows a pattern of approval in Art Unit 2812. Practitioners should prepare for the median days to allowance while noting that the 5.7% lift provides an additional advantage. Even with this rate, the 5.7% lift suggests that interviews can still be a tool for resolving outstanding issues within the tech center.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18438167 | HIGH BANDWIDTH MEMORY STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18438335 | SEMICONDUCTOR PACKAGE IN A STACK FORM | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18558270 | DISPLAY APPARATUS AND DISPLAY PANEL | Final Rejection | BOE Technology Group Co., Ltd. |
| 18660255 | DISPLAY PANEL AND DISPLAY APPARATUS | Final Rejection | Samsung Display Co., Ltd. |
| 18634784 | DISPLAY DEVICE | Final Rejection | Samsung Display Co., LTD. |
| 18537813 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., Ltd. |
| 18497485 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18306314 | DISPLAY DEVICE AND MANUFACTURING METHOD FOR THE SAME | Non-Final OA | Samsung Display Co., Ltd. |
| 18630302 | MICROELECTRONIC ASSEMBLIES | Non-Final OA | Intel Corporation |
| 17557128 | INTEGRATED CIRCUITS WITH MAX OR MX CONDUCTIVE MATERIALS | Final Rejection | Intel Corporation |
| 18727697 | PRODUCTION METHOD FOR SEMICONDUCTOR PACKAGES | Non-Final OA | RESONAC CORPORATION |
| 18718096 | SENSOR DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18398419 | ASYMMETRIC SOURCE/DRAIN SPACER WITH SHIFTED VBPR AND BSPDN | Non-Final OA | International Business Machines Corporation |
| 17995461 | LOSS PREVENTION DURING ATOMIC LAYER DEPOSITION | Final Rejection | Lam Research Corporation |
| 18586767 | SUPPORT SUBSTRATE, MANUFACTURING METHOD OF SUPPORT SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR STORAGE DEVICE | Non-Final OA | Kioxia Corporation |
| 18736659 | METAL-INSULATOR-METAL DEVICE STRUCTURES AND METHODS OF FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18324729 | WRAP-AROUND SILICIDE LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18619758 | SEMICONDUCTOR PACKAGES WITH REINFORCEMENT STRUCTURES | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18108719 | DIPOLE FORMATION PROCESSES | Non-Final OA | Applied Materials, Inc. |
| 18782942 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE | Non-Final OA | ROHM CO., LTD. |
| 18231176 | METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE | Final Rejection | Infineon Technologies AG |
| 18619090 | INTEGRATED CIRCUIT PACKAGE DEVICE WITH A POWER DELIVERY SUBSTRATE | Non-Final OA | Advanced Micro Devices, Inc. |
| 18609368 | SEMICONDUCTOR STRUCTURE | Final Rejection | MediaTek Singapore Pte. Ltd. |
| 18620054 | PACKING STRUCTURE AND METHOD FOR FORMING THE SAME | Non-Final OA | Winbond Electronics Corp. |
| 18243453 | CHARGE-SENSING SEMICONDUCTOR DEVICE WITH DELTA LAYER TUNNEL JUNCTION | Final Rejection | National Technology & Engineering Solutions of Sandia, LLC |
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