Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2154 2818 2827 2893
This examiner grants 93% of resolved cases
Huan Hoang has a high volume of 1231 resolved cases in Tech Center 2800 and Art Unit 2154. The allowance rate is 93.3%. This 93.3% rate is exceptionally high, suggesting a very favorable environment for patent grants. The 1231 resolved cases provide a massive data set that underscores a consistent and efficient examination style in Tech Center 2800.
The interview lift of 5.6% is low, likely because the baseline allowance rate of 93.3% is already very high. This 5.6% lift indicates that while interviews are available, they are not the primary driver of success. For the 1231 cases resolved, the 93.3% allowance rate remains the most significant metric. Practitioners should focus on maintaining the high quality of their initial filings to leverage this 93.3% rate.
The median days to allowance is 620. This 620-day timeline is notably short, indicating a very rapid pace of resolution. Applicants in Art Unit 2154 can expect a faster path to grant compared to other units. The combination of a 93.3% allowance rate and a 620-day median pendency makes this one of the most efficient dockets for the 1231 cases handled.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19022713 | NON-VOLATILE MEMORY DEVICE WITH VARIABLE BIT LINE CAPACITANCE AND PROGRAM METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18986889 | NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19028470 | DEVICE HAVING PAGE BUFFER, MEMORY SYSTEM, AND METHOD OF OPERATING THE SAME | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18776200 | SEMICONDUCTOR STRUCTURES IN THREE-DIMENSIONAL MEMORY DEVICES | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18967200 | METHODS FOR ROW HAMMER MITIGATION AND MEMORY DEVICES AND SYSTEMS EMPLOYING THE SAME | Non-Final OA | Lodestar Licensing Group LLC |
| 18533172 | SEMICONDUCTOR MEMORY DEVICE CAPABLE OF CONTROLLING ROW HAMMERING AND METHOD OF DRIVING THE SAME | Non-Final OA | SK hynix Inc. |
| 19014791 | MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18967232 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 19067373 | SOFT-BIT READ FOR SUPER CELLS IN A MEMORY DEVICE | Non-Final OA | Micron Technology, Inc. |
| 19040378 | FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS | Non-Final OA | Micron Technology, Inc. |
| 18924589 | TRACKING THE EFFECTS OF VOLTAGE AND TEMPERATURE ON A MEMORY DEVICE USING AN INTERNAL OSCILLATOR | Final Rejection | Micron Technology, Inc. |
| 19000605 | COMPUTING DEVICE, MEMORY CONTROLLER, AND METHOD FOR PERFORMING AN IN-MEMORY COMPUTATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18973767 | NON-VOLATILE MEMORY CIRCUIT AND METHOD | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18789652 | MEMORY ARRAY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATING A MEMORY ARRAY CIRCUIT | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18868859 | CHANNEL-SHARED DATA STROBE | Non-Final OA | Rambus Inc. |
| 18782022 | ARRAY OF MULTI-VALUE NON-VOLATILE MEMORY CELLS | Final Rejection | Silicon Storage Technology, Inc. |
| 18938256 | NAND String Utilizing Floating Body Memory Cell | Non-Final OA | Zeno Semiconductor, Inc. |
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