Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2823 2897 2899
This examiner grants 87% of resolved cases
Wilner Jean Baptiste works in Tech Center 2800 and Art Unit 2823, with 1104 resolved cases. The examiner has an allowance rate of 86.6 percent and a median of 834 days to allowance. These figures show the success rate and the pendency period for a large volume of 1104 resolved cases. The data indicates a stable prosecution environment in Art Unit 2823. The 1104 resolved cases represent the total applications that have reached a final grant or abandonment.
The interview lift is 5.1 percent, which is a modest but positive impact relative to the 86.6 percent base allowance rate. This 5.1 percent lift suggests that while interviews can be helpful, the high 86.6 percent allowance rate is largely driven by the examiner's standard practices. For practitioners, the 1104 resolved cases provide a reliable basis for expecting a grant, with the 5.1 percent lift offering a small additional advantage. The 834 days to allowance is the benchmark timeline for achieving these results.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18729357 | X-RAY DETECTOR COMPRISING SCINTILLATOR, WHICH COMPRISES PEROVSKITE COMPOUND | Non-Final OA | LG ELECTRONICS INC. |
| 18061283 | INTEGRATED CIRCUIT PACKAGE ARCHITECTURES WITH CORE AND/OR BUILD-UP LAYERS COMPRISING SPIN-ON GLASS (SOG) | Final Rejection | Intel Corporation |
| 18716464 | SEMICONDUCTOR DEVICE, ELECTRONIC EQUIPMENT, AND WAFER | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18551648 | PHOTODETECTION DEVICE AND ELECTRONIC DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18729041 | SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR DEVICE | Non-Final OA | Resonac Corporation |
| 18480143 | NANOSHEET TRANSISTORS WITH MULTI-LAYERED CHANNEL STRUCTURES | Non-Final OA | International Business Machines Corporation |
| 18732621 | SEMICONDUCTOR DEVICE INCLUDING RESONANT TUNNELING LAYER | Non-Final OA | SK hynix Inc. |
| 18414003 | SILICON NITRIDE METAL LAYER COVERS | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18778329 | Integrated Circuitry, Memory Circuitry, And Method Of Forming Integrated Circuitry | Non-Final OA | Micron Technology, Inc. |
| 18731821 | BONDED STRUCTURE WITH HALF-OVAL BONDING PAD PAIR DESIGN AND METHOD OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18398856 | SEMICONDUCTOR MEMORY CELL STRUCTURE INCLUDING A VERTICAL CHANNEL | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18173086 | PACKAGE STRUCTURE HAVING A STACKED SEMICONDUCTOR DIES WITH WAVY SIDEWALLS AND METHOD OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18782354 | HETEROGENOUS INTEGRATION SCHEME FOR III-V/Si AND Si CMOS INTEGRATED CIRCUITS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18625431 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18800278 | THROUGH-HOLE ELECTRODE SUBSTRATE | Non-Final OA | Dai Nippon Printing Co., Ltd. |
| 18518735 | CRYSTALLINE INZNO OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CRYSTALLINE INZNO OXIDE SEMICONDUCTOR | Final Rejection | IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) |
| 18678008 | SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18733304 | SEMICONDUCTOR DEVICE ARRANGEMENT AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | EPISTAR CORPORATION |
| 18711001 | IBC CELL AND PREPARATION METHOD THEREFOR | Non-Final OA | HENGDIAN GROUP DMEGC MAGNETICS CO., LTD |
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