Prosecution Insights
Last updated: October 02, 2026

Examiner: TRICE III, WILLIAM CLARENCE

Tech Center 2800 • Art Units: 2811 2827 2875 2893

This examiner grants 82% of resolved cases

Analysis

William Clarence Trice III serves in Tech Center 2800 and Art Unit 2811, with a record of 55 resolved cases. The allowance rate stands at 81.8 percent, indicating the frequency of successful outcomes. These 55 resolved cases offer a data set for understanding the examiner's approach. This volume of cases forms the basis for the current metrics.

The interview lift is 27.2 percent, which highlights the impact of oral advocacy during prosecution. A median days to allowance of 1270 provides a benchmark for the speed of the process. Within Art Unit 2811, these statistics reflect the examiner's typical workflow and decision-making timeline.

For practitioners, the 27.2 percent interview lift is a relevant metric when considering a request for a personal discussion. The 81.8 percent allowance rate and the 1270 median days to allowance are factors for setting realistic goals. Data from Tech Center 2800 suggests a predictable environment for patent applications.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

81.8%
Allow Rate
+13.8% vs TC avg
89
Total Applications
+27.2%
Interview Lift
1270
Avg Prosecution Days
Based on 55 resolved cases, 2023–2026

Rejection Statute Breakdown

0%
§101 Eligibility
21.9%
§102 Novelty
59.7%
§103 Obviousness
18.1%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
18439863 SEMICONDUCTOR DEVICE Final Rejection Samsung Electronics Co., Ltd.
18422612 DISPLAY PANEL AND ELECTRONIC DEVICE Non-Final OA Samsung Electronics Co., Ltd.
17677329 METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND INTEGRATED CIRCUIT DEVICES FORMED BY THE SAME Non-Final OA Samsung Electronics Co., Ltd.
18077394 INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES Final Rejection Intel Corporation
17561682 INTEGRATED CIRCUIT STRUCTURE WITH BURIED POWER RAIL Final Rejection Intel Corporation
18847289 SEMICONDUCTOR DEVICE Non-Final OA Semiconductor Energy Laboratory Co., Ltd.
18394568 SiC EPITAXIAL WAFER Final Rejection Resonac Corporation
18657487 HIGH-ASPECT RATIO METALLIZED STRUCTURES Final Rejection GE Precision Healthcare LLC
18608931 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Non-Final OA SK hynix Inc.
18789197 MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Non-Final OA TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
18786268 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF Non-Final OA Taiwan Semiconductor Manufacturing Company, Ltd.
18786260 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Non-Final OA Taiwan Semiconductor Manufacturing Company, Ltd.
18773631 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME Non-Final OA TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
18345552 INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF Non-Final OA TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
17875975 SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE AND METHOD FOR FORMING THE SAME Non-Final OA Taiwan Semiconductor Manufacturing Company, Ltd.
18232986 SPACER STRUCTURES IN SEMICONDUCTOR DEVICES Non-Final OA Taiwan Semiconductor Manufacturing Co., Ltd.
18637574 MICROWAVE APPARATUS FOR DUAL MODE OPERATION AND METHODS OF USE Non-Final OA Applied Materials, Inc.
18404530 IMAGE SENSORS WITH A TUNABLE FLOATING DIFFUSION STRUCTURE Final Rejection KLA Corporation
18654015 TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES Non-Final OA Invention and Collaboration Laboratory, Inc.
18140030 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME Non-Final OA Semiconductor Manufacturing International (Beijing) Corporation

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