Tech Center 4100 • Art Units: 1787 2811 2812 4100
This examiner grants 91% of resolved cases
Examiner S M Sohel Imtiaz works within Tech Center 4100 and Art Unit 1787. The examiner has a high allowance rate of 90.7 percent across 560 resolved cases. This suggests that the vast majority of applications in this portfolio successfully reach issuance. The median days to allowance is 843, providing a clear timeframe for applicants to expect a final decision on their patent filings.
While the allowance rate is already high, the interview lift is 7.0 percent. This relatively small lift indicates that while interviews are helpful, they may not be the primary driver of success in this unit. For the 560 resolved cases, the 90.7 percent allowance rate demonstrates a high probability of grant regardless of interview status. Practitioners in Art Unit 1787 should focus on maintaining the quality of their submissions to align with the 843-day median pendency and the 7.0 percent lift potential.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18777978 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18521209 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18488412 | INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18236190 | SEMICONDUCTOR PACKAGE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18791245 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18740701 | DISPLAY APPARATUS | Non-Final OA | Samsung Display Co., LTD. |
| 18396236 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | SAMSUNG DISPLAY CO., LTD. |
| 18798654 | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE COMPRISING THE SAME | Non-Final OA | LG Display Co., Ltd. |
| 18661898 | PHOTOELECTRIC CONVERSION DEVICE AND EQUIPMENT | Non-Final OA | CANON KABUSHIKI KAISHA |
| 18680875 | PACKAGE COMPRISING A TRENCH CAPACITOR DEVICE WITH A METALLIZATION PORTION COMPRISING BAR METALLIZATION INTERCONNECTS | Non-Final OA | QUALCOMM Incorporated |
| 18341852 | THREE-DIMENSIONAL FLOATING BODY MEMORY | Non-Final OA | Intel Corporation |
| 18129688 | BACKSIDE CONTACT ETCH BEFORE CAVITY SPACER FORMATION FOR BACKSIDE CONTACT OF TRANSISTOR SOURCE/DRAIN | Non-Final OA | Intel Corporation |
| 18148355 | INTEGRATED CIRCUIT DEVICE PACKAGE SUBSTRATES WITH GLASS CORE LAYER HAVING ROUGHENED SURFACES | Final Rejection | Intel Corporation |
| 17958279 | GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM | Final Rejection | Intel Corporation |
| 18833963 | SMART IC SUBSTRATE MODULE AND SMART IC SUBSTRATE | Non-Final OA | LG INNOTEK CO., LTD. |
| 18745100 | PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE | Non-Final OA | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 18593582 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE | Non-Final OA | Kioxia Corporation |
| 18648965 | THIN FILM RESISTOR INTEGRATION WITH TERMINALS | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18050338 | TRANSISTOR WITH DISTRIBUTED THERMAL FEEDBACK | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18637865 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES | Non-Final OA | STMicroelectronics International N.V. |
| 18784089 | Ferroelectric Memory Device and Method of Manufacturing the Same | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18613805 | BIASABLE GAS DISTRIBUTION PLATE | Non-Final OA | Applied Materials, Inc. |
| 18773032 | VERTICAL LIGHT-EMITTING DIODE | Non-Final OA | SEOUL VIOSYS CO., LTD. |
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