Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2898
This examiner grants 78% of resolved cases
Nathan Andrew Pridemore is an examiner in Tech Center 2800 and Art Unit 2898. He has managed 83 resolved cases with an allowance rate of 78.3 percent. This 78.3 percent rate indicates that a majority of applications in his docket reach a grant, providing a baseline for applicant expectations.
The interview lift is 13.1 percent. This figure suggests that conducting an interview is a productive strategy for increasing the likelihood of a grant. The 13.1 percent lift provides a meaningful boost to the allowance rate, making it a recommended tactic for practitioners to use during prosecution.
The median days to allowance is 1278. This timeline represents the typical duration for applications to reach a final grant. With 83 resolved cases, these metrics offer a clear view of the examiner's performance. The 1278-day median defines the expected prosecution experience for applicants in this docket.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18435198 | SEMICONDUCTOR DEVICES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18517325 | SEMICONDUCTOR DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 18708727 | COLOR FILTER ARRANGEMENT STRUCTURE, DISPLAY PANEL AND DISPLAY DEVICE | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18467581 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18595540 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE | Non-Final OA | NICHIA CORPORATION |
| 18411729 | ELECTRONIC DEVICE | Non-Final OA | InnoLux Corporation |
| 18716725 | Display for Wearable Computing Devices Having a Three-Dimensional Cover | Non-Final OA | Google LLC |
| 17642057 | METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION OF PSEUDO-SUBSTRATES AND FORMATION OF COMPOSITES ALLOWING THE ADDITION OF PREVIOUSLY UN-ACCESSIBLE FUNCTIONALITY OF GROUP lll-NITRIDES | Final Rejection | The Regents of the University of California |
| 18499699 | SEMICONDUCTOR DEVICE | Final Rejection | Mitsubishi Electric Corporation |
| 18562749 | Semiconductor Device | Non-Final OA | NTT, Inc. |
| 18637576 | INTER-GATE CONTACTS FOR STACKED FIELD-EFFECT TRANSISTORS | Non-Final OA | International Business Machines Corporation |
| 17479794 | BOTTOM JUNCTION AND CONTACT AREA STRUCTURES FOR VERTICAL TRANSPORT FIELD-EFFECT TRANSISTORS | Final Rejection | International Business Machines Corporation |
| 18595430 | SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR | Non-Final OA | SK hynix Inc. |
| 17991365 | MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18595092 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Kioxia Corporation |
| 18788413 | TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18782351 | SELF-ALIGNED INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18768125 | SEMICONDUCTOR DEVICE WITH GATE CUT STRUCTURE AND METHOD OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18790122 | SEMICONDUCTOR DEVICE AND METHOD | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18595038 | MEMORY DEVICE AND METHOD FOR FORMING THE SAME | Non-Final OA | NATIONAL TAIWAN UNIVERSITY |
| 18589686 | BIPOLAR TRANSISTOR STRUCTURE WITH FERROELECTRIC MATERIAL | Non-Final OA | GlobalFoundries U.S. Inc. |
| 17877324 | Method for Manufacturing Integrated Metal Resistance Layer | Non-Final OA | Shanghai Huali Integrated Circuit Corporation |
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