Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2825
This examiner grants 89% of resolved cases
James Steven Wells has resolved 34 cases in Art Unit 2825, resulting in a high allowance rate of 88.2 percent. The median days to allowance is 966, which is a relatively efficient timeline. This suggests a favorable environment within Tech Center 2800. The 88.2 percent allowance rate is a strong indicator that most applications will eventually reach a grant under this examiner's review.
The interview lift is minimal at 2.8 percent. With an 88.2 percent allowance rate already in place, the marginal benefit of an interview is small. Applicants can expect a high probability of success through standard prosecution channels without necessarily relying on verbal advocacy. The 966-day timeline is also quite efficient, suggesting that the examiner processes cases without unnecessary delays. Practitioners should focus on providing high-quality written responses to maintain this efficiency. Given the 88.2 percent baseline, the examiner seems to have a clear understanding of the technology and a willingness to grant patents that meet the necessary criteria. This makes Art Unit 2825 a favorable venue for applicants across the 34 resolved cases.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19029709 | MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO.,LTD. |
| 19017127 | MEMORY DEVICE WHICH GENERATES OPTIMAL WRITE VOLTAGE BASED ON REFERENCE RESISTANCE OF MEMORY CELL AND METHOD OF OPERATING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18239480 | NONVOLATILE MEMORY DEVICE INCLUDING THERMAL THROTTLING | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18507993 | CONTROL METHODS, PARAMETER CALCULATION METHODS, MEMORY AND MEMORY SYSTEMS | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 18892864 | MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE MEMORY DEVICE, AND TEST OPERATION OF THE MEMORY DEVICE | Final Rejection | SK hynix Inc. |
| 18632972 | MEMORY DEVICE FOR PERFORMING A PROGRAM OPERATION AND AN OPERATING METHOD OF THE MEMORY DEVICE | Final Rejection | SK hynix Inc. |
| 19074253 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18599848 | SEMICONDUCTOR MEMORY DEVICE | Final Rejection | Kioxia Corporation |
| 18417402 | SEMICONDUCTOR MEMORY DEVICE | Final Rejection | KIOXIA CORPORATION |
| 18122908 | Memory system, memory access interface device and operation method thereof | Final Rejection | REALTEK SEMICONDUCTOR CORP. |
| 19045466 | BLOCK REOPENING PROTOCOL IN A MEMORY SUB-SYSTEM | Non-Final OA | Micron Technology, Inc. |
| 18791079 | Method and Apparatus for Sharing a Sense Amplifier between Memory Cells of a Memory Device | Final Rejection | Micron Technology, Inc. |
| 18745731 | CORRECTIVE READ ON PARTIALLY PROGRAMMED BLOCKS | Final Rejection | Micron Technology, Inc. |
| 18947475 | MEMORY CIRCUIT AND METHOD OF OPERATING SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18498369 | INTEGRATED CIRCUIT, SYSTEM AND METHOD OF FORMING THE SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18977506 | POWER CONSUMPTION MANAGEMENT OF A SOLID STATE DEVICE BASED ON OPERATION PRIORITY | Non-Final OA | Microchip Technology Incorporated |
| 19039948 | Data Storage Device and Method for Bit-Error-Rate Balancing in Fractional-Bit-Per-Cell Memory | Non-Final OA | Sandisk Technologies, Inc. |
| 19039962 | Data Storage Device and Method for Read Threshold Calibration in Fractional-Bit-Per-Cell Memory | Non-Final OA | Sandisk Technologies, Inc. |
| 18613246 | APPARATUS AND METHODS FOR USING HOLE CURRENT FOR ERASE VERIFY | Final Rejection | Sandisk Technologies, Inc. |
| 18306572 | EFFICIENT WRITE OPERATION FOR SRAM | Final Rejection | MediaTek Singapore Pte. Ltd. |
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