Tech Center 2800 • Art Units: 2800 2813
This examiner grants 81% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18515009 | CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18471583 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18479006 | INTEGRATED CIRCUIT DEVICE WITH FERROELECTRIC CAPACITOR | Non-Final OA | Texas Instruments Incorporated |
| 18361997 | SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS HAVING DIFFERENT ENERGY BARRIER HEIGHTS TO GATE LAYER | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18351308 | MAGNETIC DEVICE HAVING PLURALITY OF COUPLED MAGNETIC TUNNEL JUNCTION PILLARS | Final Rejection | Katholieke Universiteit Leuven |
| 18510287 | ELECTRONIC DEVICE | Non-Final OA | SAMSUNG DISPLAY CO., LTD. |
| 18463417 | FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 18073576 | LIGHT EMITTING DEVICE | Final Rejection | Innolux Corporation |
| 18540104 | LIGHT EMITTING UNIT AND LENS UNIT | Non-Final OA | NICHIA CORPORATION |
| 18176987 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18204009 | TRIAC GATE DESIGN FOR COMMUTATION SENSITIVITY TRADE OFF IMPROVEMENT | Non-Final OA | STMicroelectronics International N.V. |
| 18338984 | MEMORY DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18741376 | METHOD OF MANUFACTURING A FIELD EFFECT TRANSDUCER | Final Rejection | Analog Devices, Inc. |
| 18240685 | CIRCUIT BOARD | Final Rejection | SAMSUNG ELECTRO-MECHANICS CO., LTD. |
| 18511547 | ELECTRONIC DEVICE | Non-Final OA | Renesas Electronics Corporation |
| 18345270 | STACKED LED CHIPS | Non-Final OA | CreeLED, Inc. |
| 18174462 | HEMT DEVICE AND MANUFACTURING PROCESS THEREOF | Non-Final OA | STMICROELECTRONICS S.r.l. |
| 18121782 | METAL STACK WITH PHONON SCATTERING LAYER THAT FORMS A NON-OHMIC CONTACT TO A SEMICONDUCTOR LAYER | Final Rejection | Wolfspeed, Inc. |
| 18175231 | Electric Field Modification for Nitrogen-Polar Group III-Nitride Semiconductor Devices | Non-Final OA | Wolfspeed, Inc. |
| 18468957 | Semiconductor Device and Methods of Making and Using Dummy Vias to Reduce Short-Circuits Between Solder Bumps | Final Rejection | STATS ChipPAC Pte. Ltd. |
| 18270464 | PHOTOELECTRIC CONVERSION ELEMENT MATERIAL, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT MATERIAL, AND INK IN WHICH SEMICONDUCTOR NANOPARTICLES ARE DISPERSED | Final Rejection | UNIVERSITY INDUSTRY FOUNDATION, YONSEI UNIVERSITY |
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