Tech Center 2800 • Art Units: 2817 2823 2893
This examiner grants 85% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18231838 | SEMICONDUCTOR DEVICE HAVING A BONDED STRUCTURE AND AN ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17826441 | INORGANIC LIGHT EMITTING DIODE INCLUDING CONDUCTIVE MEMBERS, DISPLAY MODULE AND MANUFACTURING METHOD THEREOF | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18516536 | Display Device | Non-Final OA | LG Display Co., Ltd. |
| 17978012 | LIGHT EMITTING DISPLAY APPARATUS | Non-Final OA | LG Display Co., Ltd. |
| 18273730 | NANOWIRE, FABRICATION METHOD OF ARRAY SUBSTRATE, ARRAY SUBSTRATE AND ELECTRONIC DEVICE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18326216 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, PHOTOELECTRIC CONVERSION DEVICE, ELECTRONIC DEVICE AND IMAGE FORMING APPARATUS | Final Rejection | CANON KABUSHIKI KAISHA |
| 17751909 | FIELD TERMINATION STRUCTURE FOR MONOLITHICALLY INTEGRATED POWER SEMICONDUCTOR DEVICES | Final Rejection | Infineon Technologies AG |
| 17936393 | VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY | Non-Final OA | International Business Machines Corporation |
| 18344665 | STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHODS FOR FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 17842972 | EMBEDDED CAPACITORS WITH SHARED ELECTRODES | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17651645 | MOS TYPE SEMICONDUCTOR DEVICE HAVING FIELD PLATE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME | Final Rejection | Kabushiki Kaisha Toshiba |
| 17976625 | SURFACE-MOUNT DEVICE WIRE BONDING IN SEMICONDUCTOR DEVICE ASSEMBLIES | Final Rejection | Micron Technology, Inc. |
| 18460171 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18166230 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD | Final Rejection | Toshiba Electronic Devices & Storage Corporation |
| 18013456 | SILICON CARBIDE SEMICONDUCTOR DEVICE | Non-Final OA | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
| 18548165 | Field-Effect Transistor and Manufacturing Method Therefor | Non-Final OA | Nippon Telegraph and Telephone Corporation |
| 18365447 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | RENESAS ELECTRONICS CORPORATION |
| 18062827 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | Non-Final OA | RENESAS ELECTRONICS CORPORATION |
| 18462613 | 3DS FET AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
| 18383125 | Light Emitting Diode Epitaxial Structure and Light Emitting Diode | Non-Final OA | HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO., LTD |
| 18168509 | METHOD FOR AUTO-ALIGNED MANUFACTURING OF A TRENCH-GATE MOS TRANSISTOR, AND SHIELDED-GATE MOS TRANSISTOR | Final Rejection | STMICROELECTRONICS PTE LTD |
| 18315496 | HEAT SPREADER FOR USE WITH A SEMICONDUCTOR DEVICE | Final Rejection | STATS ChipPAC Pte. Ltd. |
| 18307004 | CHIP PACKAGE AND MANUFACTURING METHOD THEREOF | Final Rejection | Xintec Inc. |
| 18202400 | SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN INTER-POLYSILICON OXIDE STRUCTURE | Non-Final OA | Nami MOS CO., LTD. |
| 18139017 | SIC SHIELDED GATE TRENCH MOSFET WITH IMPROVED PERFORMANCE | Non-Final OA | Nami MOS CO., LTD. |
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