Tech Center 2800 • Art Units: 2813 2823
This examiner grants 91% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18378789 | INTERCONNECT STRUCTURE INCLUDING METAL LINE AND TOP VIA FORMED THROUGH DIFFERENT PROCESSES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18381501 | DISPLAY APPARATUS | Non-Final OA | LG Display Co., Ltd. |
| 18402718 | HIGH VOLTAGE AND HIGH CURRENT SUPER SWITCH | Non-Final OA | Halliburton Energy Services, Inc. |
| 18133246 | SEMICONDUCTOR DEVICE | Final Rejection | DENSO CORPORATION |
| 18550726 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18325034 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18477907 | THREE-DIMENSIONAL MEMORY DEVICE CONTAINING LATERALLY UNDULATING ISOLATION TRENCHES AND METHODS OF MAKING THE SAME | Non-Final OA | WESTERN DIGITAL TECHNOLOGIES, INC. |
| 17947071 | FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES | Non-Final OA | Intel Corporation |
| 17943812 | DIODES WITH BACKSIDE CONTACT | Non-Final OA | Intel Corporation |
| 17690358 | TRANSISTOR ARRANGEMENTS WITH REDUCED DIMENSIONS AT THE GATE | Final Rejection | Intel Corporation |
| 18238269 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE READ AND WRITE DATA LINES | Non-Final OA | Micron Technology, Inc. |
| 18364240 | SYNAPSE DEVICE, MANUFACTURING METHOD THEREOF, AND NEUROMORPHIC DEVICE INCLUDING SYNAPSE DEVICE | Non-Final OA | Korea Advanced Institute of Science and Technology |
| 18455975 | LIGHT-EMITTING DEVICE | Non-Final OA | TIANJIN SANAN OPTOELECTRONICS CO., LTD. |
| 18350765 | SEMICONDUCTOR DEVICE | Non-Final OA | ROHM CO., LTD. |
| 18540482 | ELECTRONIC CIRCUIT COMPRISING A TRANSISTOR CELL | Non-Final OA | STMicroelectronics International N.V. |
| 18478365 | THRESHOLD VOLTAGE TUNING OF NFET VIA IMPLEMENTATION OF AN ALUMINUM-FREE CONDUCTIVE LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18362873 | SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18205678 | HIGH VOLTAGE DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18458589 | VERTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | NEXPERIA B.V. |
| 17981322 | QUDITS EMPLOYING NONLINEAR DIELECTRICS | Non-Final OA | UNIVERSITY OF HOUSTON SYSTEM |
| 18364148 | SILICON-GERMANIUM HETEROSTRUCTURES WITH SHEAR STRAIN AND GERMANIUM CONCENTRATION OSCILLATIONS FOR ENHANCED VALLEY SPLITTING | Non-Final OA | Wisconsin Alumni Research Foundation |
| 17546491 | SUBSTRATE MODIFICATIONS TO SUPPRESS CORRELATED ERRORS IN MULTIQUBIT ARRAYS | Non-Final OA | Wisconsin Alumni Research Foundation |
| 18477755 | Transformer Packages Providing Magnetostriction Management | Non-Final OA | Allegro MicroSystems, LLC |
| 18107537 | POWER SEMICONDUCTOR DEVICES HAVING NON-RECTANGULAR SEMICONDUCTOR DIE FOR ENHANCED MECHANICAL ROBUSTNESS AND REDUCED STRESS AND ELECTRIC FIELD CONCENTRATIONS | Non-Final OA | Wolfspeed, Inc. |
| 18259942 | FIELD EFFECT TRANSISTOR | Non-Final OA | OOKUMA DIAMOND DEVICE Inc. |
| 18260140 | SEMICONDUCTOR DEVICE | Non-Final OA | CSMC TECHNOLOGIES FAB2 CO., LTD. |
| 18097286 | HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF | Final Rejection | Vanguard International Semiconductor Corporation |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy