Prosecution Insights
Prosecution Insights
Tech Center 4100 • Art Units: 2128 2824 2827 2896 2898 4100
This examiner grants 94% of resolved cases
Bradley Scott Coon has overseen 51 resolved cases in Tech Center 4100. His performance in Art Unit 2128 is characterized by an allowance rate of 94.1 percent. This high percentage suggests that the examiner frequently finds applications to be in condition for allowance, which is a critical data point for applicants assessing their chances of success.
The median days to allowance for this examiner is 849. This timeframe provides a realistic expectation for the duration of the patent prosecution cycle. A period of 849 days is an important factor in the strategic management of a patent portfolio and in the timing of commercial activities related to the technology.
The interview lift for this examiner is 14.9 percent. This indicates that engaging in an interview with the examiner correlates with an increase in the probability of allowance over the 94.1 percent base rate. The 14.9 percent lift suggests that direct communication can be an effective strategy for resolving issues and moving the application toward a grant.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19012567 | NON-VOLATILE MEMORY DEVICE HAVING INITIALIZATION INFORMATION BLOCK AND SETTING METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18245843 | SCALAR PRODUCT CIRCUIT, AND METHOD FOR COMPUTING BINARY SCALAR PRODUCTS OF AN INPUT VECTOR AND WEIGHT VECTORS | Non-Final OA | Robert Bosch GmbH |
| 19391338 | MEMORIES, STORAGE SYSTEMS AND ELECTRONIC PRODUCTS | Non-Final OA | Yangtze Memory Technologies Co., LTD. |
| 19012331 | MEMORY DEVICE AND OPERATION METHOD THEREOF, AND MEMORY SYSTEM | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18790567 | SEMICONDUCTOR STRUCTURES IN MEMORY DEVICES | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 17906083 | RESISTANCE NETWORK HAVING FOUR CONTACTS PER MEMORY CELL | Final Rejection | Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V. |
| 18839926 | NON-DESTRUCTIVE MEMORY SELF-TEST | Non-Final OA | Siemens Industry Software Inc. |
| 19019819 | STORAGE DEVICE AND OPERATING METHOD OF THE STORAGE DEVICE | Non-Final OA | SK hynix Inc. |
| 19039338 | CONTROLLING DATA CIRCUITRY POWER STATES | Non-Final OA | Micron Technology, Inc. |
| 18756232 | SEMICONDUCTOR DEVICE HAVING TIMING CONTROL CIRCUIT | Non-Final OA | MICRON TECHNOLOGY, INC. |
| 18404569 | OPTICAL SIGNALING FOR STACKED MEMORY DEVICE ARCHITECTURES | Final Rejection | Micron Technology, Inc. |
| 18327732 | VERTICAL NAND FLASH TYPE SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME | Final Rejection | SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION |
| 18982656 | EDGE WORD LINE BIAS ENGINEERING FOR THRESHOLD VOLTAGE MARGIN IMPROVEMENT OF SUB-BLOCK MODE | Non-Final OA | Sandisk Technologies, Inc. |
| 18603582 | LATERAL SUB-BLOCK MODE IN A MEMORY DEVICE | Non-Final OA | Sandisk Technologies, Inc. |
| 18135664 | MULTIPLEXORS FOR NEURAL NETWORK ARRAY | Final Rejection | Silicon Storage Technology, Inc |
| 19084478 | RESISTIVE RANDOM-ACCESS MEMORY WITH HYBRID BONDING INTEGRATION | Non-Final OA | HEFEI RELIANCE MEMORY LIMITED |
| 19051145 | SEMICONDUCTOR MEMORY APPARATUS AND INITIALIZATION METHOD THEREOF | Non-Final OA | Winbond Electronics Corp. |
| 18738149 | METHOD AND APPARATUS FOR SENSING FLASH MEMORY OUTPUT | Non-Final OA | Allegro MicroSystems, LLC |
| 18982119 | LOW-POWER STATIC RANDOM ACCESS MEMORY | Non-Final OA | At-memory Computing LP |
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