Tech Center 2800 • Art Units: 2825
This examiner grants 92% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18806022 | MEMORY DEVICE AND MEMORY SYSTEM | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18738711 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18790879 | MEMORY POWER DIGITAL MULTIPLEXER | Non-Final OA | Arm Limited |
| 18428967 | INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18827484 | DRIFT COMPENSATION FOR CODEWORDS IN MEMORY | Non-Final OA | Micron Technology, Inc. |
| 18739769 | WORD LINE BASED PROGRAM VOLTAGE ADJUSTMENT | Non-Final OA | Micron Technology, Inc. |
| 18423992 | GATE VOLTAGE STEP AND PROGRAM VERIFY LEVEL ADJUSTMENT IN A MEMORY DEVICE | Final Rejection | Micron Technology, Inc. |
| 18393354 | MANAGING TRAP-UP IN A MEMORY SYSTEM | Final Rejection | Micron Technology, Inc. |
| 18538652 | DYNAMIC PROGRAMMING TIME FOR A MEMORY DEVICE | Non-Final OA | Micron Technology, Inc. |
| 18451104 | SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION | Final Rejection | SK hynix Inc. |
| 18892306 | MEMORY AND OPERATION METHOD THEREOF, AND MEMORY SYSTEM | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18783900 | MEMORY SELF-REFRESH POWER GATING | Non-Final OA | Advanced Micro Devices, Inc. |
| 18743421 | PROACTIVE ERROR DETECTION IN A MEMORY DEVICE | Non-Final OA | SanDisk Technologies, Inc. |
| 18639632 | THREE DIMENSION NAND DUAL-STRING PROGRAM | Final Rejection | Sandisk Technologies, Inc. |
| 18624032 | OPERATING METHOD FOR CONTROLLING MEMORY CELL AND MEMORY SYSTEM | Final Rejection | Winbond Electronics Corp. |
| 18220387 | BITLINE TIMING-BASED MULTI-STATE PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES | Non-Final OA | SanDisk Technologies LLC |
| 18744498 | THREE-PORT SRAM CIRCUIT | Final Rejection | Shanghai Huali Integrated Circuit Corporation |
| 18581327 | Static Random Access Memory | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18686611 | FLASH MEMORY ARRAY, AND WRITING METHOD AND ERASING METHOD THEREFOR | Non-Final OA | Beijing PXMicro Technology Co. Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy