Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2825
This examiner grants 95% of resolved cases
Duy Han Luong is an examiner in Art Unit 2825 of Tech Center 2800. Across 41 resolved cases, the examiner maintains a high allowance rate of 95.1 percent. This indicates a very favorable environment for securing patent grants, with nearly every resolved case resulting in a successful outcome. Practitioners can use the 95.1 percent figure to communicate a high degree of confidence to clients regarding the likelihood of success.
The interview lift is 7.7 percent. This suggests that while interviews provide a benefit, the high baseline allowance rate of 95.1 percent is the primary factor in successful outcomes. Practitioners may still find interviews useful for resolving specific technical issues, even with a lift under ten percent. The 7.7 percent lift indicates that verbal engagement is a helpful but not always necessary supplement to written prosecution.
The median days to allowance is 849. This timeline provides a clear expectation for the duration of the prosecution cycle, lasting about two years and four months. The combination of a 95.1 percent allowance rate and an 849-day median suggests an efficient and reliable path to allowance. These metrics allow for effective planning and help in managing client expectations regarding the timing of a grant.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18947724 | EXCLUSIVE-OR BASED NON-VOLATILE MEMORY | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18946508 | MEMORY DEVICE PERFORMING REFRESH OPERATION AND OPERATION METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18717247 | DRAM MEMORY DEVICE USING A MECHANISM FOR ROW HAMMER MANAGEMENT | Non-Final OA | QUALCOMM Technologies, Inc. |
| 18989456 | Photonic Static Random Access Memory | Non-Final OA | Wisconsin Alumni Research Foundation |
| 19056479 | MEMORY DEVICES AND OPERATION METHODS THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18671452 | MEMORY DEVICE AND ERASE OPERATION THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18409089 | MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM | Final Rejection | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18215175 | COMPUTE-IN-MEMORY CIRCUIT WITH CHARGE-DOMAIN PASSIVE SUMMATION AND ASSOCIATED METHOD | Non-Final OA | MEDIATEK INC. |
| 18677302 | METHOD OF OPERATING MEMORY DEVICE | Final Rejection | SK hynix Inc. |
| 18451104 | SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION | Final Rejection | SK hynix Inc. |
| 18196263 | SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM | Non-Final OA | Kioxia Corporation |
| 19039455 | PROGRESSIVE READ-LEVEL OFFSETS FOR PARTIAL BLOCKS | Non-Final OA | Micron Technology, Inc. |
| 19000357 | READ DISTURB CHARGE LOSS HANDLING | Non-Final OA | Micron Technology, Inc. |
| 18745615 | BIT LINE BIAS IN PARTIALLY PROGRAMMED BLOCK READ OPERATIONS | Non-Final OA | Micron Technology, Inc. |
| 18423992 | GATE VOLTAGE STEP AND PROGRAM VERIFY LEVEL ADJUSTMENT IN A MEMORY DEVICE | Non-Final OA | Micron Technology, Inc. |
| 18538652 | DYNAMIC PROGRAMMING TIME FOR A MEMORY DEVICE | Final Rejection | Micron Technology, Inc. |
| 19049364 | COMPUTER-IMPLEMENTED METHOD FOR TESTING LOGIC CIRCUIT IMPLEMENTING THE CACHE FUNCTION | Non-Final OA | STMicroelectronics International N.V. |
| 18428967 | INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18783900 | MEMORY SELF-REFRESH POWER GATING | Non-Final OA | Advanced Micro Devices, Inc. |
| 18743421 | PROACTIVE ERROR DETECTION IN A MEMORY DEVICE | Final Rejection | SanDisk Technologies, Inc. |
| 18220387 | BITLINE TIMING-BASED MULTI-STATE PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES | Final Rejection | SanDisk Technologies LLC |
| 19017793 | FLASH MEMORY APPARATUS AND ERASING METHOD THEREOF | Non-Final OA | Winbond Electronics Corp. |
| 19000752 | DATA ALIGNMENT CIRCUIT OF MEMORY DEVICE | Non-Final OA | Winbond Electronics Corp. |
| 18624032 | OPERATING METHOD FOR CONTROLLING MEMORY CELL AND MEMORY SYSTEM | Non-Final OA | Winbond Electronics Corp. |
| 18581327 | Static Random Access Memory | Non-Final OA | UNITED MICROELECTRONICS CORP. |
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