Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2812
This examiner grants 92% of resolved cases
Tien Tran serves in Tech Center 2800 and Art Unit 2812, with a record of 26 resolved cases. The allowance rate stands at 92.3 percent, indicating the frequency of successful outcomes. These 26 resolved cases offer a data set for understanding the examiner's approach. This volume of cases forms the basis for the current metrics.
The interview lift is 10.5 percent, which highlights the impact of oral advocacy during prosecution. A median days to allowance of 1162 provides a benchmark for the speed of the process. Within Art Unit 2812, these statistics reflect the examiner's typical workflow and decision-making timeline.
For practitioners, the 10.5 percent interview lift is a relevant metric when considering a request for a personal discussion. The 92.3 percent allowance rate and the 1162 median days to allowance are factors for setting realistic goals. Data from Tech Center 2800 suggests a predictable environment for patent applications.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18671541 | SEMICONDUCTOR PACKAGES HAVING TRENCH STRUCTURES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18667657 | IMAGE SENSOR AND MANUFACTURING METHOD OF IMAGE SENSOR | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18435016 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18416388 | IMAGE SENSOR | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18668614 | METHOD OF TRANSFERRING LIGHT EMITTING ELEMENT USING STRETCHING DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 17987640 | MASK FRAME ASSEMBLY AND METHOD OF MANUFACTURING DISPLAY APPARATUS BY USING THE SAME | Final Rejection | Samsung Display Co., Ltd. |
| 18799684 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18824706 | GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES | Non-Final OA | QUALCOMM Incorporated |
| 18469496 | GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES | Non-Final OA | QUALCOMM Incorporated |
| 17561733 | 3D ARRAYED GLASS-BASED MMWAVE AND THZ STRUCTURES | Non-Final OA | Intel Corporation |
| 18003137 | LOW RESISTANCE GATE OXIDE METALLIZATION LINER | Non-Final OA | Lam Research Corporation |
| 18295156 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | SK hynix Inc. |
| 18586942 | INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18408944 | TRANSISTOR STRUCTURE WITH HIGHER JUNCTION BREAKDOWN VOLTAGE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, LTD. |
| 18438146 | METAL SIGNAL OR POWERLINE SEPARATION THROUGH SELECTIVE DEPOSITION IN ADVANCED MEMORY DEVICES | Non-Final OA | Applied Materials, Inc. |
| 18538105 | MEMS SENSOR AND METHOD OF MANUFACTURING MEMS SENSOR | Final Rejection | ROHM CO., LTD. |
| 18246501 | CIRCUIT COMPONENT AND SEMICONDUCTOR DEVICE | Non-Final OA | ROHM CO., LTD. |
| 18642831 | MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | MACRONIX International Co., Ltd. |
| 18075383 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18472256 | SENSOR PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF | Final Rejection | TONG HSING ELECTRONIC INDUSTRIES, LTD. |
| 18530212 | METHOD OF FORMING ELECTRODE WITH MULTI-DIELECTRIC LAYERS | Non-Final OA | MIKRO MESA TECHNOLOGY CO., LTD. |
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