Prosecution Insights
Last updated: May 29, 2026

Shanghai Huali Integrated Circuit Corporation

12 pending office actions • 10 art units • 11 examiners • 0 of 12 (0%) have an AI response strategy ready • 50 patents granted in the last 365 days

Portfolio Summary

12
Total Pending OAs
4
Non-Final OAs
2
Final Rejections
6
Advisory / Quayle

Response Deadline Pressure

Based on the USPTO statutory response window for each pending office action. 9 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.

7
Overdue
0
Due this week
1
Due this month
1
Due in next 60 days
0
Due later

Deadline Fire Line

Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 9 of the docket's apps have a known mailing date.

-30dToday30d60d90d120d
Overdue (7)Due ≤ 30 days (1)Due ≤ 60 days (1)

Case Difficulty Mix

Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.

0
Hard (0%)
12
Medium (100%)
0
Easy (0%)
0
Unknown (0%)

Rejection Statute Mix

BucketCases
§103 only12 (100%)

Industry Mix

How the docket's pending cases split across USPTO tech-center bands.

3
Life Sciences
25% of docket
0
Information Tech
0% of docket
0
Communications
0% of docket
8
Semiconductors
67% of docket
1
Mechanical / Eng
8% of docket
0
Business / Other
0% of docket

Time-on-OA Estimate

Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.

120 h
Manual time on pending OAs
24 h
Time saved (low, 20%)
42 h
Time saved (mid, 35%)
1.1 wks
FTE-weeks freed (mid)

Top Examiners on this docket

ExaminerApps on this docketAllow rateInterview lift
KOO, LAMONT B 2 80.5% +4.9%
DION, MARCEL T 1 39.7% +35.6%
WEGNER, AARON MICHAEL 1 71.4% -2.2%
CHACKO DAVIS, DABORAH 1 71.7% +20.6%
LINDSEY, COLE LEON 1 89.3% +12.3%
LAOBAK, ANDREW KEELAN 1 78.4% +31.3%
BERMAN, JASON 1 63.3% +21.9%
DUREN, TIMOTHY EDWARD 1 82.1% +12.7%
JUNGE, BRYAN R. 1 57.7% +9.0%
PRIDEMORE, NATHAN ANDREW 1 73.8% +20.3%

Quick Wins (4)

Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 4 ordered by deadline are shown.

App #TitleExaminerDue in
18129330 STRUCTURE AND METHOD FOR IMPROVING NEAR-INFRARED QUANTUM EFFICIENCY OF BACKSIDE ILLUMINATED IMAGE SENSOR LINDSEY, COLE LEON 112d overdue
18164523 METHOD FOR FORMING DIFFUSION BREAK STRUCTURE IN FIN FIELD EFFECT TRANSISTOR KOO, LAMONT B 60d overdue
18175878 Method for Manufacturing Metal Zero Layer DUREN, TIMOTHY EDWARD 10d overdue
17952916 Self-Aligned Gate Contact Fin Field Effect Transistor and Method for Manufacturing the Same KOO, LAMONT B

Interview Candidates (7)

Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 7 ordered by deadline are shown.

App #TitleExaminerDue in
18129330 STRUCTURE AND METHOD FOR IMPROVING NEAR-INFRARED QUANTUM EFFICIENCY OF BACKSIDE ILLUMINATED IMAGE SENSOR LINDSEY, COLE LEON 112d overdue
18125877 Reaction Device for Improving Epitaxial Growth Uniformity BERMAN, JASON 60d overdue
18129433 METHOD FOR IMPROVING HEIGHT DIFFERENCE BETWEEN GATES LAOBAK, ANDREW KEELAN 26d overdue
18175878 Method for Manufacturing Metal Zero Layer DUREN, TIMOTHY EDWARD 10d overdue
17877324 Method for Manufacturing Integrated Metal Resistance Layer PRIDEMORE, NATHAN ANDREW 1d overdue
18141952 METHOD FOR ADJUSTING LOCAL THICKNESS OF PHOTORESIST CHACKO DAVIS, DABORAH 13d
18406465 Wafer Polishing Locating Ring and Chemical Mechanical Polishing Device DION, MARCEL T 36d

Top Art Units

Art UnitApps
2897 2
2813 2
3723 1
1737 1
2812 1
1713 1
1794 1
2817 1
2898 1
2899 1

Pending Office Actions

App #TitleExaminerArt UnitStatutesStatusDue inAIFiled
18406465 Wafer Polishing Locating Ring and Chemical Mechanical Polishing Device DION, MARCEL T 3723 §103 Non-Final OA 36d Pending Jan 08, 2024
18465011 METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER WEGNER, AARON MICHAEL 2897 §103 Non-Final OA Pending Sep 11, 2023
18141952 METHOD FOR ADJUSTING LOCAL THICKNESS OF PHOTORESIST CHACKO DAVIS, DABORAH 1737 §103 Non-Final OA 13d Pending May 01, 2023
18129330 STRUCTURE AND METHOD FOR IMPROVING NEAR-INFRARED QUANTUM EFFICIENCY OF BACKSIDE ILLUMINATED IMAGE SENSOR LINDSEY, COLE LEON 2812 §103 Non-Final OA 112d overdue Pending Mar 31, 2023
18129433 METHOD FOR IMPROVING HEIGHT DIFFERENCE BETWEEN GATES LAOBAK, ANDREW KEELAN 1713 §103 Non-Final OA 26d overdue Pending Mar 31, 2023
18125877 Reaction Device for Improving Epitaxial Growth Uniformity BERMAN, JASON 1794 §103 Non-Final OA 60d overdue Pending Mar 24, 2023
18175878 Method for Manufacturing Metal Zero Layer DUREN, TIMOTHY EDWARD 2817 §103 Final Rejection 10d overdue Pending Feb 28, 2023
18175092 METHOD FOR MANUFACTURING SIGMA-SHAPED GROOVE JUNGE, BRYAN R. 2897 §103 Non-Final OA 29d overdue Pending Feb 27, 2023
18164523 METHOD FOR FORMING DIFFUSION BREAK STRUCTURE IN FIN FIELD EFFECT TRANSISTOR KOO, LAMONT B 2813 §103 Non-Final OA 60d overdue Pending Feb 03, 2023
17952916 Self-Aligned Gate Contact Fin Field Effect Transistor and Method for Manufacturing the Same KOO, LAMONT B 2813 §103 Non-Final OA Pending Sep 26, 2022
17877324 Method for Manufacturing Integrated Metal Resistance Layer PRIDEMORE, NATHAN ANDREW 2898 §103 Non-Final OA 1d overdue Pending Jul 29, 2022
17839313 METHOD FOR MANUFACTURING METAL GATE MOS TRANSISTOR NIELSEN, DEREK LANG 2899 §103 Final Rejection Pending Jun 13, 2022

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