Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2897
This examiner grants 72% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18363637 | COMMON OUTPUT IN 3D STACK FET | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17588306 | FLEXIBLE DISPLAY PANEL, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | Final Rejection | BOE Technology Group Co., Ltd. |
| 18670578 | Display Device | Non-Final OA | LG Display Co., Ltd. |
| 18634685 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18517068 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | Samsung Display Co., LTD. |
| 18091548 | GLASS SUBSTRATE FABRICATION USING HYBRID BONDING | Final Rejection | Intel Corporation |
| 17556520 | CONDUCTIVE FEATURES FORMED USING METAL ASSISTED ETCH | Final Rejection | Intel Corporation |
| 17406480 | SELF-ALIGNED GATE CUT STRUCTURES | Final Rejection | Intel Corporation |
| 18739536 | 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18148805 | SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF, MEMORY SYSTEMS | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 18106499 | SEMICONDUCTOR PACKAGE HAVING A THICK LOGIC DIE | Non-Final OA | MEDIATEK INC. |
| 18352175 | EPITAXIAL SUBSTRATE SURFACES FOR SEMICONDUCTOR MATERIAL GROWTH AND IMPROVED SMOOTH SEMICONDUCTOR SURFACES FOR HIGHER CHANNEL MOBILITY THROUGH THE FORMATION AND REMOVAL OF REACTIVE LAYERS | Final Rejection | California Institute of Technology |
| 17893436 | Memory Circuitry And Method Used In Forming Memory Circuitry | Final Rejection | Micron Technology, Inc. |
| 17882416 | BONDED SEMICONDUCTOR DEVICE | Non-Final OA | Micron Technology, Inc. |
| 18492359 | SEMICONDUCTOR STRUCTURES AND METHODS WITH REDUCED PLASMA INDUCED DAMAGE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17819987 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF FORMING SEMICONDUCTOR DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17874057 | METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH HARD MASK LAYER OVER FIN STRUCTURE | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17869205 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18798750 | MICRO LED PIXEL AND MICRO LED ARRAY PANEL | Non-Final OA | JADE BIRD DISPLAY (SHANGHAI) LIMITED |
| 18247490 | HEATING ELEMENT COOLING STRUCTURE AND POWER CONVERSION DEVICE | Non-Final OA | HITACHI ASTEMO, LTD. |
| 18462242 | CHANNEL UNIFORMITY HORIZONTAL GATE ALL AROUND DEVICE | Final Rejection | Applied Materials, Inc. |
| 18141557 | SELF-ALIGNED VERTICAL BITLINE FOR THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES | Non-Final OA | Applied Materials, Inc. |
| 18306187 | METHOD OF METROLOGY ON PATTERN WAFER USING REFLECTOMETRY | Final Rejection | Applied Materials, Inc. |
| 17930541 | TEMPERATURE MEASUREMENT METHOD, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE | Non-Final OA | Kioxia Corporation |
| 18084908 | METHOD AND APPARATUS FOR FORMING CRYSTALLINE SILICON FILM | Non-Final OA | Tokyo Electron Limited |
| 18227911 | SEMICONDUCTOR MODULE AND METHOD FOR FABRICATING THE SAME | Final Rejection | LX SEMICON CO., LTD. |
| 18221497 | SEMICONDUCTOR DEVICE INCLUDING VERTICALLY INTERCONNECTED SEMICONDUCTOR DIES | Non-Final OA | Sandisk Technologies, Inc. |
| 18670500 | HEMT POWER DEVICE WITH REDUCED GATE OSCILLATION AND MANUFACTURING PROCESS THEREOF | Non-Final OA | STMicroelectronics International N.V. |
| 17970336 | COOLING OF AN ELECTRONIC DEVICE | Non-Final OA | STMICROELECTRONICS (GRENOBLE 2) SAS |
| 18061130 | STEP INTERCONNECT METALLIZATION TO ENABLE PANEL LEVEL PACKAGING | Non-Final OA | NEXPERIA B.V. |
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