Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2897
This examiner grants 74% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18889604 | SEMICONDUCTOR MEMORY DEVICE INCLUDING THREE-DIMENSIONALLY ARRANGED MEMORY CELLS AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18363637 | COMMON OUTPUT IN 3D STACK FET | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18180366 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18080013 | SEMICONDUCTOR DEVICE AND AN ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18227911 | SEMICONDUCTOR MODULE AND METHOD FOR FABRICATING THE SAME | Final Rejection | LX SEMICON CO., LTD. |
| 17588306 | FLEXIBLE DISPLAY PANEL, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | Final Rejection | BOE Technology Group Co., Ltd. |
| 18634685 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18421394 | DISPLAY DEVICE | Final Rejection | LG DISPLAY CO., LTD. |
| 17711434 | GATE SPACERS WITH ADJACENT UNIFORM EPITAXIAL MATERIAL | Non-Final OA | Intel Corporation |
| 17556520 | CONDUCTIVE FEATURES FORMED USING METAL ASSISTED ETCH | Final Rejection | Intel Corporation |
| 17406480 | SELF-ALIGNED GATE CUT STRUCTURES | Final Rejection | Intel Corporation |
| 17350169 | COAXIAL STRUCTURE IN A GLASS SUBSTRATE | Non-Final OA | Intel Corporation |
| 18148805 | SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF, MEMORY SYSTEMS | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 17887071 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 18898846 | HIGH-FREQUENCY MODULE | Non-Final OA | Murata Manufacturing Co., Ltd. |
| 18106499 | SEMICONDUCTOR PACKAGE HAVING A THICK LOGIC DIE | Non-Final OA | MEDIATEK INC. |
| 18305653 | NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS | Non-Final OA | International Business Machines Corporation |
| 17974592 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLANTATION AND SEMICONDUCTOR DEVICE | Final Rejection | Infineon Technologies AG |
| 18352175 | EPITAXIAL SUBSTRATE SURFACES FOR SEMICONDUCTOR MATERIAL GROWTH AND IMPROVED SMOOTH SEMICONDUCTOR SURFACES FOR HIGHER CHANNEL MOBILITY THROUGH THE FORMATION AND REMOVAL OF REACTIVE LAYERS | Final Rejection | California Institute of Technology |
| 17930541 | TEMPERATURE MEASUREMENT METHOD, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE | Non-Final OA | Kioxia Corporation |
| 17929428 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE | Final Rejection | Kioxia Corporation |
| 17901606 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | Kioxia Corporation |
| 17893436 | Memory Circuitry And Method Used In Forming Memory Circuitry | Final Rejection | Micron Technology, Inc. |
| 17885018 | MEMORY DEVICE INCLUDING DIELECTRIC STRUCTURES HAVING REPEATING PATTERNS | Non-Final OA | Micron Technology, Inc. |
| 17970336 | COOLING OF AN ELECTRONIC DEVICE | Non-Final OA | STMICROELECTRONICS (GRENOBLE 2) SAS |
| 18438538 | DUAL DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17869205 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18141557 | SELF-ALIGNED VERTICAL BITLINE FOR THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES | Non-Final OA | Applied Materials, Inc. |
| 18306187 | METHOD OF METROLOGY ON PATTERN WAFER USING REFLECTOMETRY | Final Rejection | Applied Materials, Inc. |
| 17905176 | SEMICONDUCTOR DEVICE, SENSOR DEVICE, AND ELECTRONIC DEVICE | Non-Final OA | WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. |
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