Tech Center 2800 • Art Units: 2897
This examiner grants 65% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18363637 | COMMON OUTPUT IN 3D STACK FET | Final Rejection | Samsung Electronics Co., Ltd. |
| 18076639 | SEMICONDUCTOR DEVICE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18051907 | MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17884695 | SEMICONDUCTOR PACKAGE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 17868401 | SEMICONDUCTOR DEVICE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18352175 | EPITAXIAL SUBSTRATE SURFACES FOR SEMICONDUCTOR MATERIAL GROWTH AND IMPROVED SMOOTH SEMICONDUCTOR SURFACES FOR HIGHER CHANNEL MOBILITY THROUGH THE FORMATION AND REMOVAL OF REACTIVE LAYERS | Non-Final OA | California Institute of Technology |
| 17588306 | FLEXIBLE DISPLAY PANEL, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18248734 | Method for Manufacturing Die | Final Rejection | Honor Device Co., Ltd. |
| 18517068 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18462242 | CHANNEL UNIFORMITY HORIZONTAL GATE ALL AROUND DEVICE | Non-Final OA | Applied Materials, Inc. |
| 18141557 | SELF-ALIGNED VERTICAL BITLINE FOR THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES | Final Rejection | Applied Materials, Inc. |
| 18306187 | METHOD OF METROLOGY ON PATTERN WAFER USING REFLECTOMETRY | Non-Final OA | Applied Materials, Inc. |
| 18227911 | SEMICONDUCTOR MODULE AND METHOD FOR FABRICATING THE SAME | Final Rejection | LX SEMICON CO., LTD. |
| 18072858 | Gate All Around Dual Channel Transistors | Non-Final OA | International Business Machines Corporation |
| 18165772 | Thermal Dissipation Structures and Methods for Forming Same | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17819987 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF FORMING SEMICONDUCTOR DEVICE | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17874057 | METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH HARD MASK LAYER OVER FIN STRUCTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18091548 | GLASS SUBSTRATE FABRICATION USING HYBRID BONDING | Non-Final OA | Intel Corporation |
| 17406480 | SELF-ALIGNED GATE CUT STRUCTURES | Final Rejection | Intel Corporation |
| 17893436 | Memory Circuitry And Method Used In Forming Memory Circuitry | Final Rejection | Micron Technology, Inc. |
| 18247490 | HEATING ELEMENT COOLING STRUCTURE AND POWER CONVERSION DEVICE | Final Rejection | HITACHI ASTEMO, LTD. |
| 18393675 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | SK hynix Inc. |
| 18112384 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | SK hynix Inc. |
| 17887071 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18221497 | SEMICONDUCTOR DEVICE INCLUDING VERTICALLY INTERCONNECTED SEMICONDUCTOR DIES | Final Rejection | Sandisk Technologies, Inc. |
| 17567984 | THERMAL SENSOR PACKAGE | Final Rejection | LITE-ON SINGAPORE PTE. LTD. |
| 17970336 | COOLING OF AN ELECTRONIC DEVICE | Final Rejection | STMICROELECTRONICS (GRENOBLE 2) SAS |
| 18362761 | THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A SOURCE STRUCTURE SURROUNDED BY INNER SIDEWALLS OF VERTICAL SEMICONDUCTOR CHANNELS AND METHODS OF FORMING THE SAME | Non-Final OA | SANDISK TECHNOLOGIES LLC |
| 18465011 | METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER | Final Rejection | Shanghai Huali Integrated Circuit Corporation |
| 17846366 | Method for Providing Different Patterns on a Single Substrate | Final Rejection | IMEC VZW |
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