Prosecution Insights
Last updated: October 02, 2026

Examiner: JUNGE, BRYAN R.

Tech Center 2800 • Art Units: 2800 2812 2823 2897 2898

This examiner grants 58% of resolved cases

Analysis

Bryan R Junge is a USPTO patent examiner in Tech Center 2800 and Art Unit 2800. The examiner has 625 resolved cases, which results in an allowance rate of 58.1%. This percentage indicates the frequency of granted patents among the resolutions. The median days to allowance for these cases is 953, providing a benchmark for the timeline of successful prosecution in this unit.

The data shows an interview lift of 8.9%. This figure indicates that applications involving an interview have a higher probability of allowance than those without one. With 625 resolved cases, the examiner has a history of resolutions in Tech Center 2800. Practitioners can use the 953-day median to manage expectations regarding the duration of the patent acquisition process.

In Art Unit 2800, the examiner's 58.1% allowance rate and 8.9% interview lift are metrics for strategy. The median pendency is a figure that describes the time required to reach an allowance. These data points from the resolved cases offer an overview of the examiner's performance. Applicants should consider the 8.9% lift when deciding whether to request an interview.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

58.1%
Allow Rate
-9.9% vs TC avg
658
Total Applications
+8.9%
Interview Lift
953
Avg Prosecution Days
Based on 625 resolved cases, 2023–2026

Rejection Statute Breakdown

0.4%
§101 Eligibility
16.2%
§102 Novelty
63.2%
§103 Obviousness
17.3%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
18638771 SEMICONDUCTOR DEVICE Non-Final OA Samsung Electronics Co., Ltd.
18626444 SEMICONDUCTOR PACKAGE Non-Final OA SAMSUNG ELECTRONICS CO., LTD.
17685593 INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE Non-Final OA Samsung Electronics Co., Ltd.
18407382 DISPLAY APPARATUS Final Rejection SAMSUNG DISPLAY CO., LTD.
17846842 DISPLAY APPARATUS AND METHOD OF PROVIDING THE SAME Final Rejection Samsung Display Co., Ltd.
16915174 DISPLAY APPARATUS AND METHOD OF REPAIRING DISPLAY APPARATUS Non-Final OA Samsung Display Co., Ltd.
18645408 ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE Non-Final OA Innolux Corporation
18502025 ELECTRONIC DEVICE Final Rejection InnoLux Corporation
18464248 CONNECTION STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME Final Rejection Innolux Corporation
18013532 DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE Final Rejection SHARP KABUSHIKI KAISHA
17556660 TECHNIQUES FOR DIE TILING Final Rejection Intel Corporation
18402950 METHODS AND SYSTEMS FOR FORMING STRUCTURES COMPRISING A THRESHOLD VOLTAGE TUNING LAYER Non-Final OA ASM IP Holding B.V.
18036993 Semiconductor Device, Display Device, Display Module, and Electronic Device Non-Final OA Semiconductor Energy Laboratory Co., Ltd.
18630684 IMAGING DEVICE AND METHOD OF MANUFACTURING IMAGING DEVICE Non-Final OA SONY SEMICONDUCTOR SOLUTIONS CORPORATION
17842417 MAGNETIC MEMORY DEVICE Final Rejection Kioxia Corporation
18440581 MICROELECTRONIC DEVICES WITH MULTIPLE STEP CONTACTS EXTENDING TO STEPPED TIERS, AND RELATED METHODS Non-Final OA Micron Technology, Inc.
18664767 High-K Gate Dielectric and Method Forming Same Non-Final OA Taiwan Semiconductor Manufacturing Co., Ltd.
18219245 WIRING STRUCTURE WITH CONDUCTIVE FEATURES HAVING DIFFERENT CRITICAL DIMENSIONS, AND METHOD OF MANUFACTURING THE SAME Final Rejection NANYA TECHNOLOGY CORPORATION
17879995 WIRING STRUCTURE WITH CONDUCTIVE FEATURES HAVING DIFFERENT CRITICAL DIMENSIONS, AND METHOD OF MANUFACTURING THE SAME Final Rejection NANYA TECHNOLOGY CORPORATION
18500721 TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME Non-Final OA SANDISK TECHNOLOGIES LLC
18020032 METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR WAFER AND NITRIDE SEMICONDUCTOR WAFER Non-Final OA SHIN-ETSU HANDOTAI CO., LTD.
18548616 METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE Final Rejection Soitec
18175092 METHOD FOR MANUFACTURING SIGMA-SHAPED GROOVE Non-Final OA Shanghai Huali Integrated Circuit Corporation

Facing This Examiner?

IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.

Build Your Strategy

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month